IRFP250M [INFINEON]
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. ;
| 型号： | IRFP250M |
| 厂家： | 
Infineon |
| 描述： | The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. |
| 文件： | 总9页 (文件大小：1127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFP250MPbF
IR MOSFET™
Features
Advanced Process Technology
V(BR)DSS
200V
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Ease of Paralleling
RDS(on) max.
0.075
ID
30A
Simple Drive Requirements
Lead-Free
Description
IR MOSFET™ technology from Infineon utilizes
advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit,
combined with the fast switching speed and rugged
device design that IR MOSFET™ devices are well
known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
TO-247AD
G
D
S
Gate
Drain
Source
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
Standard Pack
Form
Base part number
Package Type
Orderable Part Number
Quantity
IRFP250MPbF
TO-247AD
Tube
25
IRFP250MPbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
30
21
A
120
214
W
PD @TC = 25°C
Maximum Power Dissipation
W/°C
Linear Derating Factor
1.4
± 20
315
30
V
mJ
A
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
21
8.6
-55 to + 175
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
Max.
0.7
Units
–––
0.24
–––
RJC
RCS
RJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
–––
40
°C/W
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IRFP250MPbF
Electrical characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
200 ––– –––
––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
V
VGS = 0V, ID = 250µA
––– ––– 0.075
VGS = 10V, ID = 18A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 18A
VDS = 200V, VGS = 0V
VDS = 160V,VGS = 0V,TJ =150°C
VGS = 20V
V
S
VGS(th)
gfs
2.0
17
––– –––
–––
––– –––
25
4.0
Forward Trans conductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
––– ––– 250
––– ––– 100
––– ––– -100
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
––– ––– 123
ID = 18A
––– –––
––– –––
21
57
nC VDS = 160V
VGS = 10V, See Fig.6 and 13
–––
–––
–––
–––
14
43
41
33
VDD = 100V
ID = 18A
RG= 3.9
RD= 5.5 See Fig.10
–––
–––
–––
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
Between lead,
6mm (0.25in.)
from package
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
5.0
13
–––
–––
nH
and center of die contact
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 2159 –––
––– 315 –––
VGS = 0V
pF VDS = 25V
–––
83
–––
ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
Min. Typ. Max. Units
––– ––– 30
Conditions
MOSFET symbol
showing the
Continuous Source Current
(Body Diode)
IS
A
Pulsed Source Current
integral reverse
ISM
––– ––– 120
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– –––
––– 186 279
––– 1.3 2.0
1.3
V
TJ = 25°C,IS = 18A,VGS = 0V
ns TJ = 25°C ,IF = 18A
Qrr
µC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 1.9mH, RG = 25, IAS = 18A.(See fig. 12).
ISD 18A, di/dt 374A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 300µs; duty cycle 2%.
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IRFP250MPbF
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Output Characteristics
Fig. 4 Normalized On-Resistance vs. Temperature
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Fig. 3 Typical Transfer Characteristics
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IRFP250MPbF
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
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IRFP250MPbF
Fig 10a. Switching Time Test Circuit
Fig 9. Maximum Drain Current vs. Case
Temperature
Fig 10a. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP250MPbF
Fig. 12a. Unclamped Inductive Test Circuit
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig. 12b. Unclamped Inductive Waveforms
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel
IR MOSFET™
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TO-247AD Package Outline (Dimensions are shown in millimeters (inches))
MILLIMETERS
DIMENSIONS
MIN.
4.70
2.20
1.50
1.00
1.60
2.57
0.38
20.70
13.08
0.51
15.50
12.38
3.40
1.00
MAX.
5.30
2.60
2.50
1.40
2.41
3.43
0.89
21.50
17.65
1.35
16.30
14.15
5.10
2.60
A
A1
A2
b
DOCUMENT NO.
Z8B00003327
b1
b2
c
REVISION
D
06
D1
D2
E
SCALE 3:1
0 1 2 3 4 5mm
E1
E2
E3
e
EUROPEAN PROJECTION
5.44
L
19.80
3.85
3.50
5.35
6.04
20.40
4.50
3.70
6.25
6.30
L1
P
ISSUE DATE
25.07.2018
Q
S
TO-247AD Part Marking Information
8
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IRFP250MPbF
Revision History
Date
Comments
Updated datasheet with corporate template
Updated Package picture-page1
05/28/2020
Corrected from “Hexfet power MOSFET” to “ IR MOSFET™” -page1 &7
Corrected part marking from TO-247AC to TO-247AD on page 8.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
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