IRFP250N [INFINEON]
Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A); 功率MOSFET （ VDSS = 200 V， RDS（ON） = 0.075ohm ，ID = 30A ）
| 型号： | IRFP250N |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A) |
| 文件： | 总8页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94008
IRFP250N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
D
VDSS = 200V
R
DS(on) = 0.075Ω
G
ID = 30A
S
l Simple Drive Requirements
Description
FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
30
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
21
A
120
214
1.4
± 20
315
30
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
21
mJ
V/ns
8.6
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
0.7
–––
40
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
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1
10/09/00
IRFP250N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.26 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.075
Ω
V
S
VGS = 10V, ID = 18A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 18A
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 20V
2.0
17
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 123
––– ––– 21
––– ––– 57
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 18A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 160V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
14 –––
43 –––
41 –––
33 –––
VDD = 100V
ID = 18A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 3.9Ω
RD = 5.5Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5 –––
nH
pF
G
–––
7.5
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 2159 –––
––– 315 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
–––
83 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
30
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
120
S
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 186 279
––– 1.3 2.0
V
TJ = 25°C, IS = 18A, VGS = 0V
TJ = 25°C, IF = 18A
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ISD ≤ 18A, di/dt ≤ 374A/µs, VDD ≤ V(BR)DSS
,
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Starting TJ = 25°C, L = 1.9mH
RG = 25Ω, IAS = 18A. (See Figure 12)
2
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IRFP250N
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM4.5V
BOTTOM 4.5V
4.5V
4.5V
1
1
0.1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 175 C
J
°
T = 25 C
J
0.1
0.1
0.01
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
30A
=
I
D
100
10
1
°
T = 175 C
J
°
T = 25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
5.0
6.0
7.0
8.0 9.0 10.0
T , Junction Temperature( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFP250N
5000
16
12
8
V
GS
= 0V, f = 1 MHZ
= C + C , C
I
D
=
18A
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
SHORTED
iss
gs
gd ds
C
= C
rss
gd
4000
3000
2000
1000
0
C
= C + C
ds gd
oss
Ciss
Coss
Crss
4
0
0
20
40
60
80
100
1
10
100
1000
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
°
T = 175 C
J
10us
100us
1ms
°
T = 25 C
J
°
T = 25 C
C
°
T = 175 C
Single Pulse
J
10ms
V
= 0 V
GS
0.1
0.2
1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
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IRFP250N
RD
VDS
35
30
25
20
15
10
5
VGS
10V
D.U.T.
RG
+
-
VDD
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
10%
T
C
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
1
D = 0.50
0.20
0.1
0.10
P
2
DM
0.05
t
1
SINGLE PULSE
0.02
t
(THERMAL RESPONSE)
0.01
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP250N
800
600
400
200
0
I
D
15V
TOP
7.3A
13A
BOTTOM 18A
D RIVER
L
V
D S
D .U .T
R
+
G
V
D D
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR )D SS
t
p
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFP250N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFP250N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
- D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
B
M
M
2.50 (.089)
- B -
- A -
1.50 (.059)
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIONING & TO LERANCING
P ER ANSI Y14.5M , 1982.
1
2
3
2
3
CONTROLLING DIMENSIO N : INCH.
CONFORMS TO JEDEC OUTLINE
TO-247-AC.
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD AS SIGNMENTS
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
3X
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
2.60 (.102)
2.20 (.087)
0.25 (.010)
C
A
S
M
5.45 (.215)
3.40 (.133)
3.00 (.118)
2X
Part Marking Information
TO-247AC
EXAMPLE : THIS IS AN IRFPE30
W ITH ASSEMBLY
A
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 3A1Q
IRFPE30
3A1Q 9302
DATE CODE
(YYW W )
ASSEMBLY
LOT CODE
YY
= YEAR
W W W EEK
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Data and specifications subject to change without notice. 10/00
8
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