IRFP460NPBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFP460NPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总8页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94809
SMPS MOSFET
IRFP460NPbF
HEXFET® Power MOSFET
Applications
ꢀ Switch Mode Power Supply ( SMPS )
ꢀ Uninterruptable Power Supply
ꢀ High speed power switching
ꢀ Switch Mode Power Supply ( SMPS )
ꢀ Lead-Free
VDSS
500V
Rds(on) max
ID
20A
0.24Ω
Benefits
ꢀ Low Gate Charge Qg results in Simple
Drive Requirement
ꢀ Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
ꢀ Fully Characterized Capacitance and
Avalanche Voltage and Current
ꢀ Effective Coss specified ( See AN1001)
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ꢁ
20
13
80
A
PD @TC = 25°C
Power Dissipation
280
W
W/°C
V
Linear Derating Factor
2.2
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt ꢂ
Operating Junction and
5.0
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies:
ꢀ Full Bridge
ꢀ PFC Boost
Notes ꢀ through ꢁare on page 8
www.irf.com
1
11/3/03
IRFP460NPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
500 ––– –––
––– 0.58 –––
––– ––– 0.24
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A ꢀ
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Ω
3.0
––– 5.0
V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
nA
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 12A
ID = 20A
gfs
10 ––– –––
S
Qg
––– ––– 124
––– ––– 40
––– ––– 57
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13 ꢀ
–––
–––
–––
–––
23 –––
87 –––
34 –––
33 –––
VDD = 250V
ID = 20A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.3Ω
RD = 13Ω,See Fig. 10 ꢀ
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 3540 –––
––– 350 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
––– 3930 –––
––– 95 –––
––– 200 –––
30 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢁ
Coss eff.
Avalanche Characteristics
Parameter
Typ.
Max.
340
20
Units
mJ
EAS
IAR
Single Pulse Avalanche Energyꢂ
–––
–––
–––
Avalanche Currentꢃ
A
EAR
Repetitive Avalanche Energyꢃ
28
mJ
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.45
–––
40
Units
RθJC
RθCS
RθJA
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
20
80
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode) ꢃ
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.8
––– 550 825
––– 7.2 10.8
V
TJ = 25°C, IS = 20A, VGS = 0V ꢀ
ns
TJ = 25°C, IF = 20A
Qrr
ton
µC di/dt = 100A/µs ꢀ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFP460NPbF
100
10
1
100
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
TOP
BOTTOM 5.0V
BOTTOM 5.0V
1
0.1
5.0V
5.0V
0.01
0.001
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
°
T = 150 C
J
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.5
100
20A
=
I
D
°
T = 150 C
3.0
2.5
2.0
1.5
1.0
0.5
0.0
J
10
°
T = 25 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5
6
7
8
9
10
11
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFP460NPbF
20
16
12
8
100000
I
D
= 20A
V
C
= 0V,
f = 1 MHZ
GS
V
V
V
= 400V
= 250V
= 100V
= C + C
,
C
ds
SHORTED
DS
DS
DS
iss
gs
gd
C
= C
rss
gd
C
= C + C
oss
ds gd
10000
1000
100
Ciss
Coss
Crss
10
4
FOR TEST CIRCUIT
SEE FIGURE 13
10
0
0
20
40
60
80
100
120
140
1
100
1000
Q , Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
100
10
1
10
100µsec
1msec
°
T = 25 C
J
1
T
T
= 25°C
A
J
10msec
1000
= 150°C
V
= 0 V
GS
1.4
Single Pulse
0.1
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1.6
10
100
10000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFP460NPbF
RD
20
15
10
5
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
2
DM
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP460NPbF
750
600
450
300
150
0
15V
I
D
TOP
8.9A
12.6A
BOTTOM 20A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
25
50
75
100
125
150
t
p
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
10 V
.2µF
12V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
G
V
GS
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFP460NPbF
Peak Diode Recovery dv/dt Test Circuit
+
ꢀ
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
+
ꢂ
-
ꢁ
-
+
ꢃ
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFP460NPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
- D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
M
B
M
2.50 (.089)
- B -
- A -
1.50 (.059)
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
CONFORMS TO JEDEC OUTLINE
TO-247-AC.
1
2
3
2
3
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD ASSIGNMENTS
Hexfet
IGBT
1 -Gate1-Gate
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
3X
2 - Drain2 - Collector
3 - Source 3 - Emitter
2.60 (.102)
2.20 (.087)
0.25 (.010)
C
A
S
M
5.45 (.215)
4 - Drain
4 - Collector
3.40 (.133)
3.00 (.118)
2X
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
035H
57
56
DATE CODE
YEAR 0 = 2000
WEEK 35
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE H
Notes:
ꢀ Repetitive rating; pulse width limited by
ꢃ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢂ Starting TJ = 25°C, L = 1.8mH
ꢄ Coss eff. is a fixed capacitance that gives the same charging time
RG = 25Ω, IAS = 20A. (See Figure 12)
as Coss while VDS is rising from 0 to 80% VDSS
ꢁ ISD ≤ 20A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/03
8
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