IRFP460N [INFINEON]
Power MOSFET(Vdss=500V, Rds(on)max=0.24ohm, Id=20A); 功率MOSFET （ VDSS = 500V ， RDS（ON）最大值= 0.24ohm ，ID = 20A ）
| 型号： | IRFP460N |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=500V, Rds(on)max=0.24ohm, Id=20A) |
| 文件： | 总8页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94098
SMPS MOSFET
IRFP460N
HEXFET® Power MOSFET
Applications
VDSS
500V
Rds(on) max
ID
20A
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
0.24Ω
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified ( See AN1001)
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
20
13
80
A
PD @TC = 25°C
Power Dissipation
280
W
W/°C
V
Linear Derating Factor
2.2
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
5.0
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies:
l Full Bridge
l PFC Boost
Notes through ꢀare on page 8
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1
05/22/01
IRFP460N
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
500 ––– –––
––– 0.58 –––
––– ––– 0.24
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 12A
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Ω
3.0
––– 5.0
V
VDS = VGS, ID = 250µA
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
VDS = 500V, VGS = 0V
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 400V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 30V
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
gfs
10 ––– –––
S
VDS = 50V, ID = 12A
ID = 20A
Qg
––– ––– 124
––– ––– 40
––– ––– 57
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
23 –––
87 –––
34 –––
33 –––
VDD = 250V
ID = 20A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.3Ω
RD = 13Ω,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 3540 –––
––– 350 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
––– 3930 –––
––– 95 –––
––– 200 –––
30 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢀ
Coss eff.
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
340
20
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
A
EAR
Repetitive Avalanche Energy
28
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.45
–––
40
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
20
80
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.8
––– 550 825
––– 7.2 10.8
V
TJ = 25°C, IS = 20A, VGS = 0V
TJ = 25°C, IF = 20A
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFP460N
100
10
1
100
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
TOP
BOTTOM 5.0V
BOTTOM 5.0V
1
0.1
5.0V
5.0V
0.01
0.001
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
T = 150 C
J
°
°
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.5
100
20A
=
I
D
°
T = 150 C
3.0
2.5
2.0
1.5
1.0
0.5
0.0
J
10
°
T = 25 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
5
6
7
8
9
10
11
°
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFP460N
20
16
12
8
100000
I
D
= 20A
V
= 0V,
f = 1 MHZ
GS
V
V
V
= 400V
= 250V
= 100V
C
= C + C
,
C
ds
SHORTED
DS
DS
DS
iss
gs
gd
C
= C
rss
gd
C
= C + C
ds gd
oss
10000
1000
100
Ciss
Coss
Crss
10
4
FOR TEST CIRCUIT
SEE FIGURE 13
10
0
0
20
40
60
80
100
120
140
1
100
1000
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T = 150 C
J
100
10
1
10
100µsec
1msec
°
T = 25 C
J
1
T
T
= 25°C
A
J
10msec
1000
= 150°C
V
= 0 V
GS
Single Pulse
0.1
0.2
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
100
10000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFP460N
RD
20
15
10
5
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP460N
750
600
450
300
150
0
1 5V
I
D
TOP
8.9A
12.6A
20A
BOTTOM
DRIVER
L
V
G
DS
D.U.T
AS
R
+
V
D D
-
I
A
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
25
50
75
100
125
150
t
p
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
10 V
.2µF
12V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
G
V
GS
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFP460N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFP460N
Package Outline
TO-247AC
Dimensions are shown in millimeters (inches)
- D
-
3 .65 (.1 43 )
3 .55 (.1 40 )
5 .3 0 (.20 9 )
4 .7 0 (.18 5 )
1 5.9 0 (.6 2 6)
1 5.3 0 (.6 0 2)
0.2 5 (.0 1 0)
M
D
B
M
2 .5 0 (.08 9 )
1 .5 0 (.05 9 )
- B
-
- A
-
5.50 (.21 7)
4
2 0 .30 (.8 0 0)
1 9 .70 (.7 7 5)
NO TE S :
5.50 (.2 1 7)
4.50 (.1 7 7)
2 X
1
D IM EN SIO N IN G & TO LE R A N C IN G
P ER A N S I Y 14.5M , 1982.
C O N TR O LLIN G DIM E N S IO N : IN C H .
C O N FO RM S TO JE D E C O U TLINE
TO -247-A C .
1
2
3
2
3
- C
-
1 4.8 0 (.5 83 )
1 4.2 0 (.5 59 )
4 .3 0 (.1 70 )
3 .7 0 (.1 45 )
LE A D A S S IG N M E N TS
2 .40 (.0 9 4)
2 .00 (.0 7 9)
2 X
0 .80 (.0 31 )
0 .40 (.0 16 )
1 .4 0 (.0 5 6)
1 .0 0 (.0 3 9)
3X
3 X
1 - G A TE
2 - D R A IN
3 - S O U R C E
4 - D R A IN
2 .60 (.1 0 2)
2 .20 (.0 8 7)
0.2 5 (.0 10 )
A
C
M
S
5.45 (.2 15 )
3.4 0 (.1 33 )
3.0 0 (.1 18 )
2 X
Part Marking Information
TO-247AC
EXAMP LE
:
TH IS IS AN IRFP E30
W ITH AS SEMBL Y
LO T CO D E 3 A1 Q
A
PART N UM BER
IN TER NATIO N AL
R ECTIFIER
LO G O
IRFPE 30
3 A1Q 9 302
D ATE CO D E
(YYW W )
A SSEMBL Y
LO T
CO D E
YY
= YEA R
W W W E EK
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 1.8mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 20A. (See Figure 12)
ISD ≤ 20A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/01
8
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