IRFP9140N [INFINEON]
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A); 功率MOSFET （ VDSS = -100V ， RDS（ON） = 0.117ohm ，ID = -23A ）
| 型号： | IRFP9140N |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
| 文件： | 总8页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1492A
IRFP9140N
PRELIMINARY
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l P-Channel
D
VDSS = -100V
RDS(on) = 0.117Ω
l Fast Switching
G
l Fully Avalanche Rated
ID = -23A
S
Description
FifthGenerationHEXFETsfromInternationalRectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
-23
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current ꢀ
-16
A
-76
PD @TC = 25°C
Power Dissipation
140
W
W/°C
V
Linear Derating Factor
0.91
± 20
430
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
-11
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
14
mJ
V/ns
-5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
RθJC
RθCS
RθJA
1.1
–––
40
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
3/16/98
IRFP9140N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-100 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mAꢀ
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.117
-2.0 ––– -4.0
Ω
V
S
VGS = -10V, ID = -13A
VDS = VGS, ID = -250µA
VDS = -50V, ID = 11Aꢀ
VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
5.3
––– –––
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 97
––– ––– 15
––– ––– 51
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = -11A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -80V
VGS = -10V, See Fig. 6 and 13 ꢀ
–––
–––
–––
–––
15 –––
67 –––
51 –––
51 –––
VDD = -50V
ID = -11A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 5.1Ω
RD = 4.2Ω, See Fig. 10 ꢀ
Between lead,
6mm (0.25in.)
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
5.0 –––
nH
pF
G
from package
–––
13
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 1300 –––
––– 400 –––
––– 240 –––
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-23
-76
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode) ꢀ
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– -1.3
––– 150 220
V
TJ = 25°C, IS = -13A, VGS = 0V
ns
TJ = 25°C, IF = -11A
Qrr
ton
––– 830 1200 µC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRF9540N data and test conditions
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 7.1mH
RG = 25Ω, IAS = -11A. (See Figure 12)
ISD ≤ -11A, di/dt ≤ -470A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
IRFP9140N
100
10
1
100
10
1
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
TOP
BOTTOM - 4.5V
BOTTOM - 4.5V
-4.5V
-4.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
= 25°C
T
= 175°C
c
C
A
A
0.1
1
10
100
0.1
1
10
100
-V
D S
, Drain-to-Source Voltage (V)
-V
D S
, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.5
I
= -19A
D
TJ = 25°C
TJ = 175°C
2.0
1.5
1.0
0.5
0.0
10
1
VDS = -25V
20µs PULSE W ID TH
V
= -10V
GS
0.1
A
10 A
4
5
6
7
8
9
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
-VG S , Gate-to-Source Voltage (V)
T
J
, Junction Tem perature (°C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFP9140N
3000
20
16
12
8
V
C
C
C
= 0V,
f = 1M Hz
I
= -11A
GS
iss
D
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
gd
ds
V
V
V
= -80V
= -50V
= -20V
DS
DS
DS
rss
oss
2500
2000
1500
1000
500
gd
C
iss
C
C
oss
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
A
A
1
10
100
0
20
40
60 80
100
-V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
D S
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIM ITED
BY R
DS(on)
T
= 175°C
J
T
= 25°C
J
100µs
1m s
T
T
= 25°C
= 175°C
C
J
10m s
V
= 0V
Single Pulse
G S
1.4
A
0.1
1
A
0.2
0.4
0.6
0.8
1.0
1.2
1.6
1
10
100
1000
-V
, Drain-to-Source Voltage (V)
-V
, Source-to-Drain Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFP9140N
25
20
15
10
5
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
P
DM
0.10
0.05
0.1
t
1
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFP9140N
1200
1000
800
600
400
200
0
L
V
I
DS
D
TOP
-4.7A
-8.1A
-11A
D.U.T
R
BOTTOM
G
V
DD
A
I
AS
DRIVER
-20V
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test Circuit
A
175
25
50
75
100
125
150
I
AS
Starting T , Junction Tem perature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRFP9140N
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
-
+
-
-
+
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
[
=10V ] ***
V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
[
[
]
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
]
I
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
IRFP9140N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
- D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
B
M
M
2.50 (.089)
- B -
- A -
1.50 (.059)
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIONING & TO LERANCING
P ER ANSI Y14.5M , 1982.
1
2
3
2
3
CONTROLLING DIMENSIO N : INCH.
CONFORMS TO JEDEC OUTLINE
TO-247-AC.
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD AS SIGNMENTS
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
3X
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
2.60 (.102)
2.20 (.087)
0.25 (.010)
C
A
S
M
5.45 (.215)
3.40 (.133)
3.00 (.118)
2X
Part Marking Information
TO-247AC
EXAMPLE : THIS IS AN IRFPE30
W ITH ASSEMBLY
A
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 3A1Q
IRFPE30
3A1Q 9302
DATE CODE
(YYW W )
ASSEMBLY
LOT
CODE
YY
= YEAR
W W W EEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
3/98
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