IRFPC50A [INFINEON]
Power MOSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11A); 功率MOSFET ( VDSS = 600V , RDS(ON)最大值= 0.58ohm ,ID = 11A)型号: | IRFPC50A |
厂家: | Infineon |
描述: | Power MOSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11A) |
文件: | 总8页 (文件大小:97K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD- 91898
SMPS MOSFET
IRFPC50A
HEXFET® Power MOSFET
Applications
VDSS
600V
Rds(on) max
ID
11A
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
0.58Ω
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified ( See AN 1001)
G D S
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
11
7.0
A
44
PD @TC = 25°C
Power Dissipation
180
W
W/°C
V
Linear Derating Factor
1.4
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
4.9
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topology:
l PFC Boost
Notes through ꢀare on page 8
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1
6/23/99
IRFPC50A
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
600 ––– –––
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.65 –––
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 6.0A
VDS = VGS, ID = 250µA
VDS = 600V, VGS = 0V
VDS = 480V, VGS = 0V, TJ = 125°C
VGS = 30V
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.58
2.0 ––– 4.0
Ω
V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 6.0A
ID = 11A
gfs
7.7 ––– –––
S
Qg
––– ––– 70
––– ––– 19
––– ––– 28
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 480V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
15 –––
40 –––
33 –––
29 –––
VDD = 300V
ID = 11A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.2Ω
RD = 30Ω,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 2100 –––
––– 270 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
9.7 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 480V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 480V ꢀ
––– 2830 –––
–––
–––
74 –––
81 –––
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
–––
Max.
920
11
Units
mJ
EAS
IAR
A
EAR
Repetitive Avalanche Energy
18
mJ
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.65
–––
40
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
11
44
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.4
––– 500 740
––– 4.0 6.0
V
TJ = 25°C, IS = 11A, VGS = 0V
ns
TJ = 25°C, IF = 11A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFPC50A
100
10
1
100
10
1
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 150 C
J
T = 25 C
J
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
11A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
°
T = 25 C
J
100V
=
V
DS
20µs PULSE WIDTH
V
= 10V
GS
1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
6.0
7.0 8.0
9.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFPC50A
20
16
12
8
100000
11A
=
I
D
V G S = 0V,
C iss = Cgs + Cgd
C rss = C gd
f = 1MHz
Cds SHORTED
,
V
V
V
= 480V
= 300V
= 120V
DS
DS
DS
C oss = Cds + C gd
10000
1000
100
10
C
C
iss
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
1
0
A
0
20
40
60
80
1
10
100
1000
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
°
T = 150 C
J
100us
°
T = 25 C
J
1ms
1
10ms
°
= 25 C
T
C
°
T
= 150 C
J
V
= 0 V
Single Pulse
GS
1.4
0.1
0.1
0.2
10
100
1000
10000
0.4
V
0.6
0.8
1.0
1.2
1.6
V
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFPC50A
RD
12
10
8
VDS
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
4
Fig 10a. Switching Time Test Circuit
V
DS
2
90%
0
25
50
T
75
100
125
150
°
, Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFPC50A
2000
1600
1200
800
400
0
I
1 5V
D
TOP
4.9A
7.0A
BOTTOM 11A
DRIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
7 3 0
Q
Q
GD
GS
7 2 0
7 1 0
7 0 0
6 9 0
6 8 0
6 7 0
6 6 0
6 5 0
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
A
0
1
2
3
4
5
6
7
8
9
1 0 1 1 1 2 1 3
V
GS
I
, Avalanche Current (A)
av
3mA
I
I
D
G
Current Sampling Resistors
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
Fig 13b. Gate Charge Test Circuit
6
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IRFPC50A
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFPC50A
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
- D
-
3.65 (.143)
3.55 (.140)
5 .30 (.209)
4 .70 (.185)
1 5.90 (.626)
1 5.30 (.602)
0.25 (.010)
D
B
M
M
2.50 (.089)
1.50 (.059)
- B -
- A -
5.50 (.217)
4
20 .30 (.800)
19 .70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIO NING & TO LER ANCING
PER ANSI Y14.5M , 1982.
CONTROLLIN G DIM ENSION : INCH .
CONF ORMS TO JEDEC O UTLINE
TO-247-AC.
1
2
3
2
3
- C
-
14.80 (.583)
14.20 (.559)
4.3 0 (.1 70)
3.7 0 (.1 45)
LEAD ASSIGNM ENTS
2.40 (.094)
2.00 (.079)
0.80 (.031)
0.40 (.016)
1.40 (.056 )
1.00 (.039 )
3X
3X
1 - GATE
2 - DR AIN
3 - SOURC E
4 - DR AIN
2X
2.60 (.102)
2.20 (.087)
0.25 (.010)
A
C
M
S
5.45 (.215)
3.4 0 (.1 33)
3.0 0 (.1 18)
2X
Part Marking Information
TO-247AC
E X A M P L E
:
TH IS IS AN IR F P E 30
A
W ITH A S S E M B L Y
L O T C O D E 3 A 1 Q
P AR T N U M B E R
IN TE R N A TIO N A L
R E C T IF IE R
L O G O
IR F P E 3 0
3 A 1 Q 9 3 0 2
D A TE C O D E
(Y YW W )
A S S E M B L Y
L O T
C O D E
YY
= YE A R
W W W E E K
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
ꢀCoss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 15mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 11A. (See Figure 12)
ISD ≤ 11A, di/dt ≤ 126A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
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Data and specifications subject to change without notice. 6/99
8
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