IRFPG50 [INFINEON]
Power MOSFET(Vdss=1000V, Rds(on)=2.0ohm, Id=6.1A); 功率MOSFET （ VDSS = 1000V ， RDS（ON） = 2.0ohm ，ID = 6.1A ）
| 型号： | IRFPG50 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=1000V, Rds(on)=2.0ohm, Id=6.1A) |
| 文件： | 总8页 (文件大小：213K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.543C
IRFPG50
HEXFET® Power MOSFET
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1
10/29/97
IRFPG50
2
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IRFPG50
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IRFPG50
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10ms
°
T = 25 C
C
°
T = 150 C
J
Single Pulse
0.1
10
100
1000
10000
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating
Area
4
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IRFPG50
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5
IRFPG50
6
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IRFPG50
Peak Diode Recovery dv/dt Test Circuit
+
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFPG50
TO-247AC Package Details
- D
-
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
5 .3 0 (.2 0 9 )
4 .7 0 (.1 8 5 )
1 5 .90 (.6 2 6)
1 5 .30 (.6 0 2)
0 .25 (.0 1 0)
M
D
B
M
2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
- B
-
- A
-
5 .5 0 (.2 1 7 )
4
2 0 .3 0 (.80 0 )
1 9 .7 0 (.77 5 )
NOTES:
5. 50 (.2 17 )
4. 50 (.1 77 )
2 X
1
DIMENSIONING & TOLERAN CING
PER AN SI Y14.5M, 1982.
CONTROLLING DIMENSION : IN CH .
CONFORM S TO JEDEC OUTLINE
TO-247-AC.
1
2
3
2
3
- C
-
1 4.8 0 (.5 8 3 )
1 4.2 0 (.5 5 9 )
4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )
LEAD ASSIGN MENTS
2 .4 0 (.09 4 )
2 .0 0 (.07 9 )
0 .8 0 (. 03 1 )
0 .4 0 (. 01 6 )
1 .4 0 (.0 56 )
1 .0 0 (.0 39 )
3 X
3 X
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
2 X
2.6 0 (.10 2 )
2.2 0 (.08 7 )
0 .25 (.0 10 )
C
A
S
M
5 .45 (.2 1 5)
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
2 X
Part Marking
E XAM P LE : THIS IS A N IR FP E30
W ITH AS SE MB LY
A
P AR T NUM B ER
IN TER NATION AL
RECTIFIER
LOGO
LOT CO DE 3A1Q
IRFPE 30
3A1Q 9302
DA TE C ODE
(Y YW W )
A S SEM B LY
LOT COD E
YY
= YE A R
W W W EE K
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086
IR SOUTHEAST ASIA:315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371
Data and specifications subject to change without notice.
10/97
8
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