IRFPS29N60L [INFINEON]
SMPS MOSFET; 开关电源MOSFET型号: | IRFPS29N60L |
厂家: | Infineon |
描述: | SMPS MOSFET |
文件: | 总9页 (文件大小:170K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 94622A
SMPS MOSFET
IRFPS29N60L
HEXFET® Power MOSFET
Applications
• Zero Voltage Switching SMPS
Trr typ.
VDSS RDS(on) typ.
175m
ID
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control applications
600V
Ω
130ns 29A
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise immunity.
Super-247™
Absolute Maximum Ratings
Parameter
Max.
29
Units
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
18
IDM
110
480
Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
W
Linear Derating Factor
Gate-to-Source Voltage
3.8
±30
W/°C
V
VGS
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
15
V/ns
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
1.1(10)
N•m (lbf•in)
Diode Characteristics
Symbol
Parameter
Continuous Source Current
Min. Typ. Max. Units
––– ––– 29
Conditions
MOSFET symbol
I
S
(Body Diode)
A
showing the
I
Pulsed Source Current
––– ––– 110
integral reverse
SM
(Body Diode)
p-n junction diode.
V
t
T = 25°C, I = 29A, V = 0V
J S GS
Diode Forward Voltage
Reverse Recovery Time
––– ––– 1.5
V
SD
T = 25°C, I = 29A
––– 130 190 ns
––– 240 360
rr
J
F
TJ = 125°C, di/dt = 100A/µs
Q
T = 25°C, I = 29A, V = 0V
Reverse Recovery Charge
––– 630 950 nC
––– 1820 2720
rr
J
S
GS
TJ = 125°C, di/dt = 100A/µs
IRRM
T = 25°C
J
Reverse Recovery Current
Forward Turn-On Time
––– 9.4
14
A
t
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
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1
8/26/04
IRFPS29N60L
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
600
–––
0.53
175
–––
–––
–––
–––
–––
0.86
–––
V
∆
∆
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient –––
––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
IDSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
3.0
210
5.0
VGS = 10V, ID = 17A
VDS = VGS, ID = 250µA
mΩ
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
50
µA VDS = 600V, VGS = 0V
mA VDS = 480V, VGS = 0V, TJ = 125°C
nA VGS = 30V
2.0
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
100
-100
–––
VGS = -30V
RG
Ω
f = 1MHz, open drain
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 17A
15
–––
–––
–––
–––
34
–––
220
67
S
–––
–––
–––
–––
–––
–––
–––
ID = 29A
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 480V
VGS = 10V, See Fig. 7 & 15
VDD = 300V
ns ID = 29A
Qgd
96
td(on)
–––
–––
–––
–––
tr
100
66
td(off)
Turn-Off Delay Time
Fall Time
RG = 4.3Ω
tf
54
VGS = 10V, See Fig. 11a & 11b
VGS = 0V
Ciss
Input Capacitance
––– 6160 –––
Coss
Output Capacitance
–––
–––
–––
–––
530
44
–––
–––
–––
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
Effective Output Capacitance
Effective Output Capacitance
pF ƒ = 1.0MHz, See Fig. 5
VGS = 0V,VDS = 0V to 480V
Coss eff.
Coss eff. (ER)
250
190
(Energy Related)
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
–––
Max.
570
29
Units
Symbol
EAS
mJ
A
Avalanche Current
IAR
Repetitive Avalanche Energy
EAR
48
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.26
–––
40
Units
Junction-to-Case
Rθ
Rθ
Rθ
JC
CS
JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.24
–––
°C/W
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff.(ER) is a fixed capacitance that stores the same energy
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting TJ = 25°C, L = 1.5mH, RG = 25Ω,
IAS = 29A. (See Figure 12a)
.
as Coss while VDS is rising from 0 to 80% VDSS
.
ISD ≤ 29A, di/dt ≤ 830A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C.
,
Rθ is measured at TJ approximately 90°C
2
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IRFPS29N60L
1000
100
10
100
10
1
20µs PULSE WIDTH
Tj = 25°C
VGS
15V
10V
9.0V
7.0V
7.0V
5.5V
5.0V
4.5V
VGS
15V
10V
9.0V
7.0V
7.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
1
4.5V
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
4.5V
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.0
I
= 28A
D
V
= 10V
GS
2.5
2.0
1.5
1.0
0.5
0.0
100.00
10.00
1.00
T
= 150°C
J
T
= 25°C
J
0.10
V
DS
= 50V
20µs PULSE WIDTH
0.01
4
6
8 10
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRFPS29N60L
100000
40
35
30
25
20
15
10
5
V
= 0V,
f = 1 MHZ
GS
C
= C + C , C SHORTED
iss
gs gd ds
C
= C
rss
gd
C
= C + C
ds gd
oss
10000
1000
100
C
iss
C
oss
C
rss
10
0
1
10
100
1000
0
100 200 300 400 500 600 700
Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
V
DS,
Fig 5. Typical Capacitance vs.
Fig 6. Typ. Output Capacitance
Drain-to-Source Voltage
Stored Energy vs. VDS
1000.00
100.00
10.00
1.00
20
16
12
8
I = 28A
D
V
= 480V
DS
VDS= 300V
VDS= 150V
T
= 150°C
J
T
= 25°C
J
4
V
= 0V
GS
0
0.10
0
40
80
120
160
200
240
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
1.6
Q
Total Gate Charge (nC)
G
, Source-to-Drain Voltage (V)
SD
Fig 8. Typical Source-Drain Diode
Fig 7. Typical Gate Charge vs.
Forward Voltage
Gate-to-Source Voltage
4
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IRFPS29N60L
1000
100
10
30
25
20
15
10
5
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
0.1
0
1
10
100
1000
10000
25
50
T
75
100
125
150
V
, Drain-to-Source Voltage (V)
, Case Temperature (°C)
DS
C
Fig 9. Maximum Safe Operating Area
Fig 10. Maximum Drain Current vs.
Case Temperature
RD
V
VDS
DS
90%
VGS
D.U.T.
RG
+VDD
-
10%
10V
V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 11b. Switching Time Waveforms
Fig 11a. Switching Time Test Circuit
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5
IRFPS29N60L
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 12. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5.0
I
= 250µA
D
4.0
3.0
2.0
1.0
-75 -50 -25
0
25
50
75 100 125 150
T
, Temperature ( °C )
J
Fig 13. Threshold Voltage vs. Temperature
6
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IRFPS29N60L
1200
1000
800
600
400
200
0
I
D
TOP
13A
18A
BOTTOM 29A
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 14a. Maximum Avalanche Energy
vs. Drain Current
15V
V
(BR)DSS
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01Ω
t
p
I
AS
Fig 14b. Unclamped Inductive Test Circuit
Fig 14c. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
Q
G
50KΩ
.2µF
VGS
V
12V
.3µF
Q
+
GS
GD
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 15b. Basic Gate Charge Waveform
Fig 15a. Gate Charge Test Circuit
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7
IRFPS29N60L
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. For N-Channel HEXFET® Power MOSFETs
8
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IRFPS29N60L
Super-247™ (TO-274AA) Package Outline
0.13 [.005]
0.25 [.010]
B A
5.50 [.216]
4.50 [.178]
16.10 [.632]
15.10 [.595]
13.90 [.547]
13.30 [.524]
A
2.15 [.084]
1.45 [.058]
3.00 [.118]
2.00 [.079]
2X R
1.30 [.051]
0.70 [.028]
16.10 [.633]
15.50 [.611]
4
4
20.80 [.818]
19.80 [.780]
C
1
2
3
B
Ø 1.60 [.063]
MAX.
E
E
14.80 [.582]
13.80 [.544]
4.25 [.167]
3.85 [.152]
1.30 [.051]
1.10 [.044]
3X
1.60 [.062]
3X
2.35 [.092]
1.65 [.065]
1.45 [.058]
5.45 [.215]
2X
L E AD AS S IGNME NT S
SECTION E-E
0.25 [.010]
B
A
IGBT
MOS F E T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]
3. CONTROLLING DIMENSION: MILLIMETER
1 - GAT E
1 - GAT E
2 - DRAIN
3 - S OURCE
4 - DRAIN
2 - COLLECT OR
3 - EMITT ER
4 - COLLECT OR
4. OUT LINE CONF ORMS T O JE DE C OU T L INE T O-274AA
Super-247™ (TO-274AA)Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH
PART NUMBER
ASSEMBLY LOT CODE A8B9
INTERNATIONAL RECTIFIER
LOGO
IRFPS37N50A
A8B9
0020
DATE CODE
(YYWW)
ASSEMBLY LOT CODE
YY = YEAR
WW = WEEK
TOP
Super TO-247™ package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04
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9
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