IRFR5305TRPBF [INFINEON]
HEXFET® Power MOSFET; HEXFET®功率MOSFET
| 型号： | IRFR5305TRPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET® Power MOSFET |
| 文件： | 总11页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95025A
IRFR5305PbF
IRFU5305PbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Surface Mount (IRFR5305)
l Straight Lead (IRFU5305)
l Advanced Process Technology
l FastSwitching
D
VDSS = -55V
RDS(on) = 0.065Ω
l Fully Avalanche Rated
l Lead-Free
G
ID = -31A
S
Description
FifthGenerationHEXFETsfromInternationalRectifierutilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET® Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
IRFR5305
I-Pak
IRFU5305
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-31
-22
A
-110
110
0.71
± 20
280
-16
PD @TC = 25°C
PowerDissipation
W
W/°C
V
LinearDeratingFactor
VGS
EAS
IAR
Gate-to-SourceVoltage
Single Pulse Avalanche Energy
AvalancheCurrent
mJ
A
EAR
dv/dt
TJ
RepetitiveAvalancheEnergy
Peak Diode Recovery dv/dt
OperatingJunctionand
11
mJ
V/ns
-5.0
-55 to + 175
TSTG
StorageTemperatureRange
SolderingTemperature,for10seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
ThermalResistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.4
50
Units
RθJC
RθJA
RθJA
Junction-to-Ambient(PCBmount)*
Junction-to-Ambient**
–––
°C/W
–––
110
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1
12/13/04
IRFR/U5305PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-55 ––– –––
Conditions
V(BR)DSS
Drain-to-SourceBreakdownVoltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ BreakdownVoltageTemp. Coefficient
––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
gfs
StaticDrain-to-SourceOn-Resistance
GateThresholdVoltage
–––
––– 0.065
Ω
V
S
VGS = -10V, ID = -16A
VDS = VGS, ID = -250µA
VDS = -25V, ID = -16A
-2.0 ––– -4.0
ForwardTransconductance
8.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– –––
––– -25
––– -250
––– 100
––– -100
V
DS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = 20V
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
TotalGateCharge
IGSS
VGS = -20V
Qg
–––
–––
–––
14
63
13
ID = -16A
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-OnDelayTime
Rise Time
nC
ns
VDS = -44V
29
VGS = -10V, See Fig. 6 and 13
VDD = -28V
–––
–––
–––
–––
66
ID = -16A
td(off)
tf
Turn-Off Delay Time
Fall Time
39
RG = 6.8Ω
63
RD = 1.6Ω, See Fig. 10
Betweenlead,
6mm(0.25in.)
D
4.5
LD
LS
InternalDrainInductance
InternalSourceInductance
–––
–––
–––
–––
nH
pF
G
frompackage
7.5
and center of die contact ꢀ
VGS = 0V
S
Ciss
Coss
Crss
InputCapacitance
––– 1200 –––
OutputCapacitance
–––
–––
520 –––
250 –––
VDS = -25V
ReverseTransferCapacitance
ƒ = 1.0MHz, See Fig. 5
Source-DrainRatingsandCharacteristics
Parameter
ContinuousSourceCurrent
(BodyDiode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
-31
––– –––
showing the
A
G
ISM
PulsedSourceCurrent
(Body Diode)
integralreverse
-110
p-n junction diode.
S
VSD
trr
DiodeForwardVoltage
ReverseRecoveryTime
ReverseRecoveryCharge
––– ––– -1.3
V
TJ = 25°C, IS = -16A, VGS = 0V
TJ = 25°C, IF = -16A
–––
71 110
ns
nC
Qrr
––– 170 250
di/dt = -100A/µs
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
ꢀThis is applied for I-PAK, LS of D-PAK is measured between
VDD = -25V, starting TJ = 25°C, L = 2.1mH
RG = 25Ω, IAS = -16A. (See Figure 12)
lead and center of die contact.
Uses IRF5305 data and test conditions.
ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
** Uses typical socket mount.
2
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IRFR/U5305PbF
1000
100
10
1000
100
10
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
TOP
BOTTOM - 4.5V
BOTTOM - 4.5V
-4.5V
-4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
TJ = 175°C
TJ = 25°C
c
C
A
1
1
A
100
0.1
1
10
100
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
I
= -27A
D
TJ = 25°C
TJ = 175°C
10
V DS= -25V
20µs PULSE WIDTH
V
= -10V
GS
1
10A
A
4
5
6
7
8
9
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
-VGS , Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFR/U5305PbF
2500
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= -16A
D
GS
iss
= C + C
,
C
SHORTED
gs
gd
ds
V
V
= -44V
= -28V
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
2000
1500
1000
500
0
C
iss
C
oss
rss
C
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
10
20
30
40
50
60
-V , Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
100µs
T = 175°C
J
1ms
T = 25°C
J
10ms
T
T
= 25°C
= 175°C
C
J
V
GS
= 0V
Single Pulse
A
10
1
A
100
0.4
0.8
1.2
1.6
2.0
1
10
-V , Drain-to-Source Voltage (V)
-V , Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR/U5305PbF
RD
VDS
35
30
25
20
15
10
5
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U5305PbF
L
V
DS
700
600
500
400
300
200
100
0
I
D
TOP
-6.6A
-11A
BOTTOM -16A
-
+
V
D.U.T
R
G
DD
A
I
AS
DRIVER
-20V
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test
Circuit
I
AS
V
= -25V
50
DD
A
175
25
75
100
125
150
Starting T , Junction Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFR/U5305PbF
Peak Diode Recovery dv/dt Test Circuit
+
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
**UseP-ChannelDriverforP-ChannelMeasurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
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IRFR/U5305PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WE E K 16
IRFU120
916A
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in ass embly line pos ition
ASSEMBLY
LOT CODE
indicates "L ead-F ree"
OR
PART NUMBER
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WEEK 16
A = ASSEMBLYSITE CODE
8
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IRFR/U5305PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WIT H AS S EMB LY
DAT E CODE
YEAR 9 = 1999
WEEK 19
RECTIFIER
LOGO
IRFU120
919A
78
LOT CODE 5678
AS SEMBLED ON WW 19, 1999
IN THE ASSEMBLY LINE "A"
56
LINE A
AS S E MB LY
LOT CODE
Note: "P" in assembly line
position indicates "Lead-Free"
OR
PART NUMBER
DAT E CODE
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
YEAR 9 = 1999
AS S E MB LY
LOT CODE
WEE K 19
A = AS S E MB L Y S IT E CODE
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9
IRFR/U5305PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
10
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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