IRFR5305 [INFINEON]
Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A); 功率MOSFET （ VDSS = -55V ， RDS（ON） = 0.065ohm ，ID = -31A ）
| 型号： | IRFR5305 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A) |
| 文件： | 总10页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91402A
IRFR/U5305
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Surface Mount (IRFR5305)
l Straight Lead (IRFU5305)
l Advanced Process Technology
l FastSwitching
D
VDSS = -55V
RDS(on) = 0.065Ω
ID = -31A
G
l Fully Avalanche Rated
S
Description
FifthGenerationHEXFETsfromInternationalRectifierutilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
HEXFET® Power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
IRFR5305
I-Pak
IRFU5305
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
-31
-22
A
-110
110
0.71
± 20
280
-16
PD @TC = 25°C
PowerDissipation
W
W/°C
V
LinearDeratingFactor
VGS
EAS
IAR
Gate-to-SourceVoltage
Single Pulse Avalanche Energy
AvalancheCurrent
mJ
A
EAR
dv/dt
TJ
RepetitiveAvalancheEnergy
Peak Diode Recovery dv/dt
OperatingJunctionand
11
mJ
V/ns
-5.0
-55 to + 175
TSTG
StorageTemperatureRange
SolderingTemperature,for10seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
ThermalResistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.4
50
Units
RθJC
RθJA
RθJA
Junction-to-Ambient(PCBmount)*
Junction-to-Ambient**
–––
°C/W
–––
110
10/23/00
IRFR/U5305
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-55 ––– –––
Conditions
V(BR)DSS
Drain-to-SourceBreakdownVoltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ BreakdownVoltageTemp. Coefficient
––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on)
VGS(th)
gfs
StaticDrain-to-SourceOn-Resistance
GateThresholdVoltage
–––
––– 0.065
Ω
V
S
VGS = -10V, ID = -16A
VDS = VGS, ID = -250µA
VDS = -25V, ID = -16A
VDS = -55V, VGS = 0V
VDS = -44V, VGS = 0V, TJ = 150°C
VGS = 20V
-2.0 ––– -4.0
ForwardTransconductance
8.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– –––
––– -25
––– -250
––– 100
––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-SourceForwardLeakage
Gate-to-SourceReverseLeakage
TotalGateCharge
IGSS
VGS = -20V
Qg
–––
–––
–––
14
63
13
ID = -16A
Qgs
Qgd
td(on)
tr
Gate-to-SourceCharge
Gate-to-Drain("Miller")Charge
Turn-OnDelayTime
Rise Time
nC
ns
VDS = -44V
29
VGS = -10V, See Fig. 6 and 13
VDD = -28V
–––
–––
–––
–––
66
ID = -16A
td(off)
tf
Turn-Off Delay Time
Fall Time
39
RG = 6.8Ω
63
RD = 1.6Ω, See Fig. 10
Betweenlead,
D
4.5
LD
LS
InternalDrainInductance
InternalSourceInductance
–––
–––
–––
–––
6mm(0.25in.)
nH
pF
G
frompackage
7.5
and center of die contact ꢀ
VGS = 0V
S
Ciss
Coss
Crss
InputCapacitance
––– 1200 –––
OutputCapacitance
–––
–––
520 –––
250 –––
VDS = -25V
ReverseTransferCapacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
ContinuousSourceCurrent
(BodyDiode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
-31
––– –––
showing the
A
G
ISM
PulsedSourceCurrent
(Body Diode)
integralreverse
––– ––– -110
––– ––– -1.3
p-n junction diode.
S
VSD
trr
DiodeForwardVoltage
ReverseRecoveryTime
ReverseRecoveryCharge
V
TJ = 25°C, IS = -16A, VGS = 0V
TJ = 25°C, IF = -16A
–––
71 110
ns
nC
Qrr
––– 170 250
di/dt = -100A/µs
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
ꢀThis is applied for I-PAK, LS of D-PAK is measured between
VDD = -25V, starting TJ = 25°C, L = 2.1mH
RG = 25Ω, IAS = -16A. (See Figure 12)
lead and center of die contact.
Uses IRF5305 data and test conditions.
ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
** Uses typical socket mount.
2
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IRFR/U5305
1000
100
10
1000
100
10
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
TOP
BOTTOM - 4.5V
BOT TOM - 4.5V
-4.5V
-4.5V
20µs PULSE W IDTH
20µs P ULSE W IDTH
T
J
C
= 175°C
T
= 25°C
c
A
100
1
1
A
0.1
1
10
0.1
1
10
100
-V
D S
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
I
= -27A
D
TJ = 25°C
TJ = 175°C
10
V
DS = -25V
20µs PULSE W IDTH
V
= -10V
G S
1
10 A
A
4
5
6
7
8
9
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
-VG S , Gate-to-Source Voltage (V)
T
J
, Junction Tem perature (°C)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFR/U5305
2500
20
16
12
8
V
C
C
C
= 0V ,
f = 1M Hz
I
= -16A
D
G S
iss
= C
= C
= C
+ C
+ C
,
C
SHORTE D
gs
gd
ds
gd
ds
V
V
= -44V
= -28V
D S
D S
rss
oss
gd
2000
1500
1000
500
0
C
C
iss
oss
C
rss
4
FOR TE ST CIRCUIT
S EE FIGURE 13
0
A
A
1
10
100
0
10
20
30
40
50
60
-V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPE RATION IN THIS AREA LIM ITE D
BY R DS(on)
100
100µs
T
= 175°C
J
1m s
T
= 25°C
J
10m s
T
T
= 25°C
= 175°C
C
J
V
= 0V
G S
S ingle Pulse
A
10
1
A
0.4
0.8
1.2
1.6
2.0
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Source-to-Drain Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFR/U5305
RD
VDS
35
30
25
20
15
10
5
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U5305
L
V
D S
700
600
500
400
300
200
100
0
I
D
TO P
-6.6A
-11A
-16A
-
+
V
D .U .T
R
G
DD
A
BOTTOM
I
A S
D R IV E R
-20 V
0.01
t
Ω
p
15V
Fig 12a. Unclamped Inductive Test
Circuit
I
AS
V
= -25V
50
DD
A
175
25
75
100
125
150
Starting T , Junction Tem perature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
GS
D.U.T.
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFR/U5305
Peak Diode Recovery dv/dt Test Circuit
+
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
**
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
*
VDD
VGS
*
* Reverse Polarity for P-Channel
**UseP-ChannelDriverforP-ChannelMeasurements
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
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7
IRFR/U5305
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.09 4)
2.19 (.08 6)
6.73 (.265 )
6.35 (.250 )
1.14 (.045)
0.89 (.035)
- A
-
1.27 (.050 )
0.88 (.035 )
5 .46 (.215 )
5 .21 (.205 )
0.58 (.02 3)
0.46 (.01 8)
4
6.4 5 (.2 45)
5.6 8 (.2 24)
6.2 2 (.2 45)
5.9 7 (.2 35)
10 .42 (.4 10 )
9.40 (.37 0)
1.02 (.04 0)
1.64 (.02 5)
LE AD A SS IG N M E NTS
1 - G A TE
1
2
3
2 - D R A IN
0 .51 (.02 0)
M IN.
- B
-
3 - S O U R CE
4 - D R A IN
1 .5 2 (.06 0)
1 .1 5 (.04 5)
0.89 (.035 )
0.64 (.025 )
3X
0 .5 8 (.0 23)
0 .4 6 (.0 18)
1.1 4 (.0 45)
0.7 6 (.0 30)
2X
0.25 (.01 0)
M
A M B
N O TE S :
2.28 (.09 0)
1
2
3
4
D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5 M , 1 982 .
C O N TR O LL ING D IM EN SIO N : IN C H .
4 .57 (.18 0)
C O N FO R M S TO JE D E C O U TLIN E TO -252 AA .
D IM E N S IO N S SH O W N A R E B EF O R E S O LD ER D IP ,
S O LD ER D IP M A X. +0.16 (.0 06).
D-Pak (TO-252AA) Part Marking Information
8
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IRFR/U5305
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
6 .73 (.26 5)
6 .35 (.25 0)
2.38 (.094)
2.19 (.086)
- A
-
0.58 (.023)
0.46 (.018)
1.27 (.050)
0.88 (.035)
5 .4 6 (.21 5)
5 .2 1 (.20 5)
L EAD A SSIG N M EN TS
1 - G ATE
4
2 - D RA IN
6.4 5 (.245)
5.6 8 (.224)
3 - SO U R C E
4 - D RA IN
6 .22 (.2 45)
5 .97 (.2 35)
1.52 (.060)
1.15 (.045)
1
2
3
- B
-
N O TE S:
1
2
3
4
D IM EN SIO N IN G
&
TO LER AN C IN G P ER AN SI Y14.5M , 198 2.
2.28 (.0 90)
1.91 (.0 75)
9.65 (.380)
8.89 (.350)
C O NTR OL LIN G D IM EN SIO N : IN C H .
C O NF O R MS TO JEDE C O UTLINE TO -25 2AA.
D IM EN SIO N S S HO W N A R E BE FO RE SO L DE R D IP,
SO LDE R DIP M AX. +0.16 (.006).
1.14 (.045 )
0.76 (.030 )
1 .14 (.04 5)
0 .89 (.03 5)
3X
0.89 (.0 35)
0.64 (.0 25)
3X
0.25 (.010 )
M
A M B
0.58 (.023)
0.46 (.018)
2.28 (.09 0)
2X
I-Pak (TO-251AA) Part Marking Information
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9
IRFR/U5305
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TR L
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIR ECTIO N
N O TES :
1. CO NTRO LLING DIM EN SIO N : M ILLIM ETER.
2. ALL D IM EN SIO N S ARE SH O W N IN M ILLIM ETERS ( IN CHES ).
3. O UTLINE C O NFO RM S TO EIA-481 & EIA-541.
13 INC H
16 m m
NO TES :
1. OU TLINE CO NFO RM S TO EIA-481.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 10/00
10
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相关型号：
IRFR5305TRL
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
INFINEON
IRFR5305TRR
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3
INFINEON
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