IRFS3207ZTRRPBF [INFINEON]
Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3;
| 型号： | IRFS3207ZTRRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFB3207ZPbF
IRFS3207ZPbF
IRFSL3207ZPbF
HEXFET® Power MOSFET
Applications
l High Efficiency Synchronous Rectification in
D
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
75V
SMPS
3.3m
4.1m
170A
120A
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
D
D
l Improved Gate, Avalanche and Dynamic
D
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche SOA
l Enhanced body diode dV/dt and dI/dt
Capability
l Lead-Free
l RoHSCompliant,Halogen-Free
S
S
D
S
D
G
G
G
D2Pak
TO-220AB
IRFB3207ZPbF
TO-262
IRFS3207ZPbF
IRFSL3207ZPbF
G
D
S
Gate
Drain
Source
Standard Pack
Base Part Number
Package Type
Orderable Part Number
Form
Quantity
IRFB3207ZPbF
IRFSL3207ZPbF
TO-220
TO-262
Tube
50
IRFB3207ZPbF
Tube
Tube
50
50
IRFSL3207ZPbF
IRFS3207ZPbF
IRFS3207ZPbF
D2Pak
Tape and Reel Left
Tape and Reel Right
800
800
IRFS3207ZTRRPbF
IRFS3207ZTRLPbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
170
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
120
A
120
670
300
PD @TC = 25°C
Maximum Power Dissipation
W
2.0
Linear Derating Factor
W/°C
V
± 20
VGS
Gate-to-Source Voltage
16
Peak Diode Recovery
dv/dt
TJ
V/ns
°C
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
10lb in (1.1N m)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
Single Pulse Avalanche Energy
EAS (Thermally limited)
170
mJ
A
Avalanche Current
IAR
See Fig. 14, 15, 22a, 22b
Repetitive Avalanche Energy
EAR
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
Max.
0.50
–––
62
Units
Rθ
–––
0.50
–––
–––
JC
Rθ
Case-to-Sink, Flat Greased Surface , TO-220
°C/W
CS
Rθ
Junction-to-Ambient, TO-220
Junction-to-Ambient (PCB Mount) , D2Pak
JA
Rθ
JA
40
1
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IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
75 ––– –––
––– 0.091 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250μA
V
ΔV(BR)DSS/ΔTJ
RDS(on)
–––
2.0
3.3
4.1
4.0
VGS = 10V, ID = 75A
mΩ
V
VGS(th)
–––
VDS = VGS, ID = 150μA
RG(int)
IDSS
Internal Gate Resistance
Drain-to-Source Leakage Current
––– 0.80 –––
––– ––– 20
Ω
μA VDS = 75V, VGS = 0V
––– ––– 250
––– ––– 100
––– ––– -100
V
V
V
DS = 75V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
GS = 20V
GS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 75A
nC ID = 75A
DS = 38V
280 ––– –––
S
––– 120 170
Qgs
Gate-to-Source Charge
–––
–––
–––
–––
–––
–––
–––
27
33
87
20
68
55
68
–––
–––
–––
–––
–––
–––
–––
V
Qgd
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
VGS = 10V
Qsync
ID = 75A, VDS =0V, VGS = 10V
td(on)
Turn-On Delay Time
ns VDD = 49V
tr
Rise Time
ID = 75A
td(off)
Turn-Off Delay Time
RG = 2.7Ω
VGS = 10V
tf
Fall Time
Ciss
Input Capacitance
––– 6920 –––
––– 600 –––
––– 270 –––
––– 770 –––
––– 960 –––
pF
V
GS = 0V
Coss
Output Capacitance
VDS = 50V
Crss
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
ƒ = 1.0MHz
Coss eff. (ER)
Coss eff. (TR)
V
GS = 0V, VDS = 0V to 60V
GS = 0V, VDS = 0V to 60V
V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
Continuous Source Current
––– –––
A
170
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
G
ISM
––– ––– 670
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
54
V
TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 64V,
–––
–––
–––
–––
–––
36
41
50
67
2.4
ns
IF = 75A
di/dt = 100A/μs
62
Qrr
Reverse Recovery Charge
75
nC
100
–––
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
ISD ≤ 75A, di/dt ≤ 1730A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
.
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.033mH
RG = 25Ω, IAS = 102A, VGS =10V. Part not recommended for use
above this value.
.
2
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IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF
1000
100
10
1000
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
100
4.5V
60μs PULSE WIDTH
≤
Tj = 175°C
60μs PULSE WIDTH
≤
Tj = 25°C
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
1000
100
10
I
= 75A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 25V
DS
≤
60μs PULSE WIDTH
0.1
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
12.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I
= 75A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
10.0
8.0
6.0
4.0
2.0
0.0
rss
oss
gd
V
V
V
= 60V
= 38V
= 15V
DS
DS
DS
= C + C
ds
gd
C
iss
C
oss
C
rss
100
0
20
40
60
80
100 120 140
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF
1000
100
10
10000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
1000
100
10
J
100μsec
T
= 25°C
J
1msec
10msec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
1
10
, Drain-to-Source Voltage (V)
100
V
, Source-to-Drain Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
180
100
95
90
85
80
75
70
Id = 5mA
Limited By Package
160
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T
, Case Temperature (°C)
T , Temperature ( °C )
J
C
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
2.5
700
I
D
600
500
400
300
200
100
0
TOP
17A
30A
2.0
1.5
1.0
0.5
0.0
BOTTOM 102A
-10
0
10 20 30 40 50 60 70 80
Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
DS,
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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Fig 11. Typical COSS Stored Energy
4
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IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF
1
D = 0.50
0.1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.1049 0.000099
τ
J τJ
τ
Cτ
τ
τ
1τ1
τ
2 τ2
3τ3
0.02
0.01
0.2469 0.001345
0.1484 0.008469
0.01
0.001
Ci= τi/Ri
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle =
Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Δ
0.01
Tstart =25°C (Single Pulse)
0.05
0.10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tstart = 150°C.
j = 25°C and
ΔΤ
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
200
180
160
140
120
100
80
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
TOP
BOTTOM 1.0% Duty Cycle
= 102A
Single Pulse
I
D
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
60
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
40
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
20
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
Starting T , Junction Temperature (°C)
EAS (AR) = PD (ave)·tav
J
Fig 15. Maximum Avalanche Energy vs. Temperature
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IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF
20
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
I = 30A
F
V
= 64V
R
T = 25°C
J
15
10
5
T = 125°C
J
I
I
I
I
= 150μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
0
0
200
400
600
800
1000
-75 -50 -25
0
25 50 75 100 125 150175 200
, Temperature ( °C )
di /dt (A/μs)
T
F
J
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
340
260
180
100
20
20
I = 45A
I
= 30A
V = 64V
R
F
F
V
= 64V
R
T = 25°C
T = 25°C
J
J
15
10
5
T = 125°C
J
T = 125°C
J
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
340
I
= 45A
F
V
= 64V
R
T = 25°C
J
260
180
100
20
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/μs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
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IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF
Driver Gate Drive
P.W.
D.U.T
Period
D =
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 20. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
I
AS
Fig 21b. Unclamped Inductive Waveforms
Fig 21a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1μs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 22a. Switching Time Test Circuit
Fig 22b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
Vgs(th)
0
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 23a. Gate Charge Test Circuit
Fig 23b. Gate Charge Waveform
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IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
INTERNATIONAL
RECTIFIER LOGO
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
PART NUMBER
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
FB3207Z
FB3207Z
DATE CODE
OR
ASSEMBLY
LOT CODE
ASSEMBLY
LOT CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
PYWW?
YWWP
LC
LC
LC
LC
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
INTERNATIONAL
RECTIFIER LOGO
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
PART NUMBER
IRFS3207Z
IRFS3207Z
OR
PYWW?
YWWP
ASSEMBLY
LOT CODE
ASSEMBLY
LOT CODE
DATE CODE
DATE CODE
P = LEAD-FREE
LC
LC
LC
LC
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9
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IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
PART NUMBER
PART NUMBER
INTERNATIONAL
RECTIFIER LOGO
INTERNATIONAL
RECTIFIER LOGO
FSL3207Z
FSL3207Z
OR
PYWW?
YWWP
ASSEMBLY
LOT CODE
ASSEMBLY
LOT CODE
DATE CODE
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
LC LC
LC LC
? = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRFB3207ZPbF/IRFS3207ZPbF/IRFSL3207ZPbF
Qualification information†
Industrial
Qualification level
(per JEDEC JESD47F†† guidelines)
TO-220
N/A
Moisture Sensitivity Level
RoHS compliant
D2Pak
TO-262
MS L 1
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comment
•
•
Updated data sheet with new IR corporate template.
Updated package outline & part marking on page 8, 9 & 10.
4/24/2014
• Updated typo on the fig.19 and fig.20, unit of y-axis from "A" to "nC" on page 6.
•
Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
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April 24, 2014
相关型号：
IRFS3307TRL
Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
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IRFS3307TRLPBF
Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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IRFS3307TRRPBF
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IRFS3307ZPBFTRL
Power Field-Effect Transistor, 75A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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IRFS3307ZTRLPBF
Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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