IRFS4227_技术文档

PD - 96131A

IRFS4227PbF

PDP SWITCH

IRFSL4227PbF

Features

Key Parameters

l

Advanced Process Technology

V_DSmax

200

240

22

V

l

Key Parameters Optimized for PDP Sustain,

Energy Recovery and Pass Switch Applications

Low E_PULSERating to Reduce Power

Dissipation in PDP Sustain, Energy Recovery

and Pass Switch Applications

V_{DS (Avalanche)}typ.

R_DS(ON)typ. @ 10V

I_RPmax @ T_C= 100°C

T_Jmax

l

m

130

175

A

°C

l

Low Q_Gfor Fast Response

High Repetitive Peak Current Capability for

Reliable Operation

D

l

Short Fall & Rise Times for Fast Switching

l

175°C Operating Junction Temperature for

Improved Ruggedness

S

D

S

G

D

G

l

Repetitive Avalanche Capability for

Robustness and Reliability

D²Pak

IRFS4227PbF

TO-262

IRFSL4227PbF

S

G

D

S

Gate

Drain

Source

Description

This HEXFET^®Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch

applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to

achievelowon-resistancepersiliconareaandlowE_PULSErating.AdditionalfeaturesofthisMOSFETare

175°C operating junction temperature and high repetitive peak current capability. These features

combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications

Absolute Maximum Ratings

Max.

±30

Parameter

Units

V

V_GS

Gate-to-Source Voltage

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

62

44

A

260

I_RP@ T_C= 100°C

P_D@T_C= 25°C

P_D@T_C= 100°C

130

Repetitive Peak Current

330

Power Dissipation

W

190

Power Dissipation

2.2

Linear Derating Factor

W/°C

T_J

-40 to + 175

Operating Junction and

T_STG

°C

N

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

300

10lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.45*

Units

Junction-to-Case

R_θ

JC

Junction-to-Ambient (PCB Mounted) D²Pak

R_θJA

–––

40

* R_θJC(end of life) for D²Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature

cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.

Notes through are on page 8

www.irf.com

1

12/06/08

IRFS/SL4227PbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Conditions

V_GS= 0V, I_D= 250µA

Reference to 25°C, I = 1mA

Parameter

Min. Typ. Max. Units

BV_DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

200

–––

3.0

–––

170

22

–––

V

/ T

∆

J

∆Β

––– mV/°C

D

DSS

V_GS= 10V, I_D= 46A

R_DS(on)

V_GS(th)

26

mΩ

V

V_DS= V_GS, I_D= 250µA

–––

-13

–––

70

5.0

∆V_GS(th)/∆T_J

I_DSS

Gate Threshold Voltage Coefficient

Drain-to-Source Leakage Current

–––

49

––– mV/°C

V_DS= 200V, V_GS= 0V

20

200

100

-100

–––

98

µA

nA

V_DS= 200V, V_GS= 0V, T_J= 125°C

V_GS= 20V

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Forward Transconductance

Total Gate Charge

V

_GS= -20V

_DS= 25V, I_D= 46A

_DD= 100V, I_D= 46A, V_GS= 10V

g_fs

Q_g

Q_gd

t_d(on)

t_r

S

–––

100

nC

Gate-to-Drain Charge

Turn-On Delay Time

23

–––

V_DD= 100V, V_GS= 10V

33

I_D= 46A

Rise Time

20

ns

t_d(off)

t_f

R_G= 2.5Ω

See Fig. 22

Turn-Off Delay Time

21

Fall Time

31

t_st

V

_DD= 160V, V_GS= 15V, R_G= 4.7Ω

L = 220nH, C= 0.4µF, V_GS= 15V

_DS= 160V, R_G= 4.7Ω, T_J= 25°C

Shoot Through Blocking Time

–––

ns

µJ

–––

570

910

–––

E_PULSE

V

Energy per Pulse

L = 220nH, C= 0.4µF, V_GS= 15V

V_DS= 160V, R_G= 4.7Ω, T_J= 100°C

V_GS= 0V

C_iss

Input Capacitance

––– 4600 –––

V

_DS= 25V

ƒ = 1.0MHz,

_GS= 0V, V_DS= 0V to 160V

Between lead,

C_oss

C_rss

Output Capacitance

–––

460

91

–––

pF

Reverse Transfer Capacitance

Effective Output Capacitance

Internal Drain Inductance

V

C_osseff.

L_D

360

4.5

D

S

nH 6mm (0.25in.)

from package

G

L_S

Internal Source Inductance

–––

7.5

–––

and center of die contact

Avalanche Characteristics

Typ.

–––

240

–––

Max.

140

46

Parameter

Units

mJ

V

E_AS

Single Pulse Avalanche Energy

Repetitive Avalanche Energy

Repetitive Avalanche Voltage

Avalanche Current

E_AR

V_{DS(Avalanche)}

I_AS

–––

37

A

Diode Characteristics

Conditions

Parameter

Min. Typ. Max. Units

I_S@ T_C= 25°C

I_SM

MOSFET symbol

Continuous Source Current

–––

62

showing the

(Body Diode)

A

integral reverse

p-n junction diode.

Pulsed Source Current

(Body Diode)

–––

260

T_J= 25°C, I_S= 46A, V_GS= 0V

T_J= 25°C, I_F= 46A, V_DD= 50V

di/dt = 100A/µs

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

–––

100

430

1.3

150

640

V

ns

nC

Q_rr

2

www.irf.com

IRFS/SL4227PbF

1000

100

10

VGS

15V

10V

8.0V

7.0V

TOP

15V

10V

8.0V

7.0V

TOP

BOTTOM

100

7.0V

10

60µs PULSE WIDTH

Tj = 175°C

≤

≤ 60µs PULSE WIDTH

Tj = 25°C

1

0.1

1

10

0.1

1

10

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000.0

100.0

10.0

1.0

4.0

3.0

2.0

1.0

0.0

I

= 46A

V

= 25V

D

DS

≤ 60µs PULSE WIDTH

V

= 10V

GS

T

= 175°C

J

T

= 25°C

J

0.1

3.0

4.0

5.0

6.0

7.0

8.0

-60 -40 -20

0

20 40 60 80 100 120 140 160 180

V

, Gate-to-Source Voltage (V)

GS

T

, Junction Temperature (°C)

J

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

1000

L = 220nH

C = Variable

L = 220nH

C = 0.4µF

100°C

900

800

700

600

500

400

300

200

100

100°C

25°C

800

25°C

600

400

200

0

130

140

150

160

170

180

190

110

120

130

140

150

160

170

I

Peak Drain Current (A)

V

Drain-to -Source Voltage (V)

D,

DS,

Fig 6. Typical E_PULSEvs. Drain Current

Fig 5. Typical E_PULSEvs. Drain-to-Source Voltage

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3

IRFS/SL4227PbF

1400

1000.0

100.0

10.0

1.0

L = 220nH

1200

C= 0.4µF

C= 0.3µF

C= 0.2µF

1000

T

= 175°C

J

800

600

400

200

0

T

= 25°C

0.8

J

V

= 0V

GS

0.1

25

50

75

100

125

150

0.2

0.4

0.6

1.0

1.2

Temperature (°C)

V

, Source-to-Drain Voltage (V)

SD

Fig 7. Typical E_PULSEvs.Temperature

Fig 8. Typical Source-Drain Diode Forward Voltage

8000

6000

4000

2000

0

20

V

C

= 0V,

f = 1 MHZ

I = 46A

D

GS

= C + C , C SHORTED

iss

gs

gd ds

V

= 160V

= 100V

= 40V

DS

C

= C

rss

oss

gd

16

12

8

= C + C

ds

gd

Ciss

Coss

Crss

4

0

20

40

60

80

100

120

1

10

100

1000

Q

Total Gate Charge (nC)

G

V

, Drain-to-Source Voltage (V)

DS

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage

Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage

70

60

50

40

30

20

10

0

1000

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

1µsec

100

10

1

100µsec

10µsec

Tc = 25°C

Tj = 175°C

Single Pulse

0.1

25

50

75

100

125

150

175

1

10

100

1000

T

, CaseTemperature (°C)

V

, Drain-to-Source Voltage (V)

C

DS

Fig 12. Maximum Safe Operating Area

Fig 11. Maximum Drain Current vs. Case Temperature

4

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IRFS/SL4227PbF

600

500

400

300

200

100

0

0.16

0.12

0.08

0.04

0.00

I

D

I

= 46A

D

TOP

8.5A

14A

37A

BOTTOM

T

= 125°C

J

= 25°C

9

J

5

6

7

8

10

25

50

75

100

125

150

175

V

, Gate-to-Source Voltage (V)

Starting T , Junction Temperature (°C)

GS

J

Fig 13. On-Resistance Vs. Gate Voltage

Fig 14. Maximum Avalanche Energy Vs. Temperature

5.0

200

ton= 1µs

Duty cycle = 0.25

4.5

4.0

Half Sine Wave

Square Pulse

160

I

= 250µA

D

120

3.5

3.0

2.5

2.0

1.5

80

40

0

-75 -50 -25

0

J

25 50 75 100 125 150 175

, Temperature ( °C )

25

50

75

100

125

150

175

Case Temperature (°C)

T

Fig 16. Typical Repetitive peak Current vs.

Fig 15. Threshold Voltage vs. Temperature

Case temperature

1

D = 0.50

0.1

0.01

0.20

0.10

0.05

R₁

R₂

R₃

Ri (°C/W) τi (sec)

0.08698 0.000074

R₁

τ

^Jτ_J

τ

^Cτ

τ

¹τ₁

τ

²τ₂

³τ₃

0.2112 0.001316

0.1506 0.009395

0.02

0.01

Ci= τi/Ri

/

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE

( THERMAL RESPONSE )

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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5

IRFS/SL4227PbF

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

+

*

=10V

V

GS

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+

-

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

-

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt

V

DD

V_DD

Re-Applied

Voltage

• di/dt controlled by R_G

R_G

+

-

Body Diode

Inductor Current

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET^®Power MOSFETs

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

V

20V

GS

Ω

0.01

t

p

I

AS

Fig 19b. Unclamped Inductive Waveforms

Fig 19a. Unclamped Inductive Test Circuit

Id

Vds

Vgs

L

VCC

DUT

Vgs(th)

0

1K

Qgs1

Qgs2

Qgd

Qgodr

Fig 20a. Gate Charge Test Circuit

Fig 20b. Gate Charge Waveform

6

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IRFS/SL4227PbF

Fig 21b. t_stTest Waveforms

Fig 21a. t_stand E_PULSETest Circuit

Fig 21c. E_PULSETest Waveforms

R_D

V

DS

V_DS

90%

V_GS

D.U.T.

R_G

⁺V_DD

-

10%

V_GS

V

GS

PulseWidth ≤ 1 µs

Duty Factor ≤ 0.1 %

t

r

t

f

d(on)

d(off)

Fig 22a. Switching Time Test Circuit

Fig 22b. Switching Time Waveforms

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7

IRFS/SL4227PbF

D²Pak Package Outline (Dimensions are shown in millimeters (inches))

D²Pak Part Marking Information

OR

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

8

www.irf.com

IRFS/SL4227PbF

TO-262 Package Outline

Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

www.irf.com

9

IRFS/SL4227PbF

D²Pak Tape & Reel Information

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

4

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

4

3

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

Starting T_J= 25°C, L = 0.2mH, R_G= 25Ω, I_AS= 37A.

Pulse width ≤ 400µs; duty cycle ≤ 2%.

R is measured at T_Jof approximately 90°C.

θ

ꢀ Half sine wave with duty cycle = 0.25, ton=1µsec.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering

techniques refer to application note #AN-994.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.

Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information. 12/2008

10

www.irf.com

IMPORTANT NOTICE

The information given in this document shall in no For further information on the product, technology,

event be regarded as a guarantee of conditions or delivery terms and conditions and prices please

characteristics (“Beschaffenheitsgarantie”) .

contact your nearest Infineon Technologies office

(www.infineon.com).

With respect to any examples, hints or any typical

values stated herein and/or any information

regarding the application of the product, Infineon

Technologies hereby disclaims any and all

warranties and liabilities of any kind, including

without limitation warranties of non-infringement

of intellectual property rights of any third party.

WARNINGS

Due to technical requirements products may

contain dangerous substances. For information on

the types in question please contact your nearest

Infineon Technologies office.

In addition, any information given in this document

is subject to customer’s compliance with its

obligations stated in this document and any

applicable legal requirements, norms and

standards concerning customer’s products and any

use of the product of Infineon Technologies in

customer’s applications.

Except as otherwise explicitly approved by Infineon

Technologies in a written document signed by

authorized

representatives

of

Infineon

Technologies, Infineon Technologies’ products may

not be used in any applications where a failure of

the product or any consequences of the use thereof

can reasonably be expected to result in personal

injury.

The data contained in this document is exclusively

intended for technically trained staff. It is the

responsibility of customer’s technical departments

to evaluate the suitability of the product for the

intended application and the completeness of the

product information given in this document with

respect to such application.


型号：	IRFS4227
厂家：	Infineon
描述：	200V 单个 N 通道 HEXFET Power MOSFET PDP 开关, 采用 D2-Pak 封装开关光电二极管
文件：	总11页 (文件大小：366K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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