IRFS4321-7PPBF_15_技术文档

IRFS4321-7PPbF

HEXFET^®Power MOSFET

Application

 Motion Control Applications

D

V_DSS

150V

 High Efficiency Synchronous Rectification in SMPS

 Uninterruptible Power Supply

 Hard Switched and High Frequency Circuits

R_{DS(on) typ.}

11.7m

14.7m

G

max

S

I_D

86A

Benefits

 Low Rdson Reduces Losses

 Low Gate Charge Improves the Switching Performance

 Improved Diode Recovery Improves Switching &

EMI Performance

 30V Gate Voltage Rating Improves Robustness

 Fully Characterized Avalanche SOA

D²Pak 7Pin

G

D

S

Gate

Drain

Source

Standard Pack

Form

Tube

Orderable Part Number

Base part number Package Type

Quantity

50

IRFS4321-7PPbF

D²Pak-7Pin

IRFS4321-7PPbF

IRFS4321TRL7PP

Tape and Reel Left

800

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

86

61

A

343

350

2.3

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W

W/°C

V

V_GS

Gate-to-Source Voltage

± 30

120

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy 

mJ

T_J

T_STG

Operating Junction and

-55 to + 175

300

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

Thermal Resistance

Parameter

Junction-to-Case 

Typ.

–––

Max.

0.43*

40

Units

°C/W

R_JC

R_JA

Junction-to-Ambient 

R_JC(end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature

cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium.

Notes through  are on page 2

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June 14, 2013

IRFS4321-7PPbF

Static @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

150 ––– –––

Conditions

V_(BR)DSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

V

V_GS= 0V, I_D= 250µA

––– 150 ––– mV/°C Reference to 25°C, I_D= 1mA 

V_(BR)DSS/T_J

R_DS(on)

––– 11.7 14.7

3.0 ––– 5.0

V_GS= 10V, I_D= 34A 

m

V_GS(th)

V

V_DS= V_GS, I_D= 250µA

––– –––

20

µA V_DS=150 V, V_GS= 0V

I_DSS

Drain-to-Source Leakage Current

1.0

mA V_DS=150V,V_GS= 0V,T_J=125°C

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

––– ––– 100

––– ––– -100

V

_GS= 20V

_GS= -20V

I_GSS

nA

V

R_G(int)

–––

0.8

–––



Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

gfs

Q_g

Forward Transconductance

Total Gate Charge

130 ––– –––

S

V_DS= 25V, I_D=50A

I_D= 50A

–––

71

24

21

18

60

110

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

Rise Time

nC V_DS= 75V

_GS= 10V

V

–––

V_DD= 98V

I_D= 50A

ns

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

–––

25

35

R_G= 2.5

V_GS= 10V

C_iss

C_oss

C_rss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

––– 4460 –––

––– 390 –––

V_GS= 0V

pF V_DS= 50V

ƒ = 1.0MHz

–––

82

–––

Diode Characteristics

Parameter

Min. Typ. Max. Units

––– ––– 86

––– ––– 343

Conditions

MOSFET symbol

D

Continuous Source Current

(Body Diode)

I_S

showing the

A

V

G

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

I_SM

S

V_SD

Diode Forward Voltage

––– –––

––– 89

1.3

T_J= 25°C,I_S= 50A,V_GS= 0V 

t_rr

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

130

ns I_F= 50A,

Q_rr

I_RRM

––– 300 450

––– 6.5 –––

nC V_DD= 128V

A

di/dt = 100A/µs 

Notes:

 Repetitive rating; pulse width limited by max. junction temperature.

 Limited by T_jmax, starting T_J= 25°C, L = 0.096mH, R_G= 25, I_AS= 50A, V_GS=10V. Part not recommended for use above this value.

 Pulse width 400µs; duty cycle  2%.

 Ris measured at T_Japproximately 90°C

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June 14, 2013

IRFS4321-7PPbF

1000

100

10

1000

100

10

VGS

15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

VGS

15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

TOP

BOTTOM

5.0V

1

 60µs PULSE WIDTH

Tj = 175°C

 60µs PULSE WIDTH

Tj = 25°C

5.0V

1

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

1000

100

10

3.5

3.0

2.5

2.0

1.5

1.0

0.5

I

= 50A

D

V

= 10V

GS

T

= 175°C

J

T

= 25°C

= 25V

J

1

V

DS

 60µs PULSE WIDTH

0.1

3.0

4.0

V

5.0

6.0

7.0

8.0

9.0

-60 -40 -20

0

20 40 60 80 100 120 140 160 180

, Gate-to-Source Voltage (V)

GS

T

, Junction Temperature (°C)

J

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

20

7000

6000

5000

4000

3000

2000

1000

0

V

C

= 0V,

f = 1 MHZ

I

= 50A

GS

D

= C + C , C SHORTED

iss

gs

gd ds

V

= 120V

DS

C

= C

rss

gd

16

12

8

VDS= 75V

VDS= 30V

C

= C + C

oss

ds

gd

Ciss

Coss

4

Crss

V

0

20

40

60

80

100

120

1

10

100

Q

Total Gate Charge (nC)

G

, Drain-to-Source Voltage (V)

DS

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

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June 14, 2013

IRFS4321-7PPbF

1000

100

10

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

100µsec

1msec

T

= 175°C

J

10msec

T

= 25°C

J

1

Tc = 25°C

Tj = 175°C

Single Pulse

DC

V

= 0V

GS

0.1

0.2

0.4

V

0.6

0.8

1.0

1.2

1.4

1

10

100

1000

V

, Drain-toSource Voltage (V)

, Source-to-Drain Voltage (V)

DS

SD

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode Forward Voltage

190

90

80

70

60

50

40

30

20

10

0

180

170

160

150

140

-60 -40 -20

0

20 40 60 80 100 120 140 160 180

25

50

75

100

125

150

175

T

, Junction Temperature (°C)

J

T

, Case Temperature (°C)

C

Fig 10. Drain-to–Source Breakdown Voltage

Fig 9. Maximum Drain Current vs. Case Temperature

500

5.0

I

D

TOP

13A

20A

50A

400

300

200

100

0

4.0

3.0

2.0

1.0

0.0

BOTTOM

25

50

75

100

125

150

175

0

20

40

60

80

100 120 140 160

Starting T , Junction Temperature (°C)

V

Drain-to-Source Voltage (V)

J

DS,

Fig 11. Typical C_ossStored Energy

Fig 12. Maximum Avalanche Energy Vs. Drain Current

4

June 14, 2013

IRFS4321-7PPbF

1

D = 0.50

0.20

0.1

0.10

R₁

R₂

R₃

(sec)

Ri (°C/W)

0.05

0.02

0.01



^J_J



^C

0.085239 0.000052

0.18817 0.00098

0.176912 0.008365



¹₁



²₂

³₃

0.01

Ci= iRi

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100

10

1

Allowed avalanche Current vs avalanche

Duty Cycle = Single Pulse

pulsewidth, tav, assuming Tj = 150°C and

Tstart =25°C (Single Pulse)

0.01

0.05

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming  j = 25°C and

Tstart = 150°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs. Pulse width

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not exceeded.

3. Equation below based on circuit and waveforms shown in Figures

23a, 23b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage

increase during avalanche).

6. I_av= Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed T_jmax

(assumed as 25°C in Figure 14, 15).

120

100

80

60

40

20

0

TOP

BOTTOM 1% Duty Cycle

= 50A

Single Pulse

I

D

t_av= Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 13)

PD (ave) = 1/2 ( 1.3·BV·I_av) = T/ Z_thJC

I

_av= 2T/ [1.3·BV·Z_th]

25

50

75

100

125

150

175

E_{AS (AR)}= P_{D (ave)· av}

t

Starting T , Junction Temperature (°C)

J

Fig 15. Maximum Avalanche Energy vs. Temperature

5

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June 14, 2013

IRFS4321-7PPbF

40

30

20

10

0

6.0

5.0

4.0

3.0

2.0

1.0

I

= 1.0A

D

= 1.0mA

= 250µA

I

= 33A

F

V

= 128V

= 125°C

= 25°C

R

T

J

T

100 200 300 400 500 600 700 800 900 1000

-75 -50 -25

0

25 50 75 100 125 150 175

, Temperature ( °C )

di / dt - (A / µs)

f

T

J

Fig 17. Typical Recovery Current vs. dif/dt

Fig 16. Threshold Voltage vs. Temperature

3200

40

2800

2400

2000

1600

1200

800

30

20

I

= 50A

I

= 33A

F

10

0

V

= 128V

V

T

= 128V

R

T

= 125°C

= 25°C

= 125°C

= 25°C

J

400

J

T

J

0

100 200 300 400 500 600 700 800 900 1000

di / dt - (A / µs)

f

di / dt - (A / µs)

f

Fig 18. Typical Recovery Current vs. dif/dt

Fig 19. Typical Stored Charge vs. dif/dt

3200

2800

2400

2000

1600

1200

800

I

= 50A

F

V

T

= 128V

= 125°C

= 25°C

R

400

J

T

0

100 200 300 400 500 600 700 800 900 1000

di / dt - (A / µs)

f

Fig 20. Typical Stored Charge vs. dif/dt

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June 14, 2013

IRFS4321-7PPbF

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power MOSFETs

V

(BR)DSS

t

p

15V

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

20V

I

0.01



t

p

AS

Fig 22a. Unclamped Inductive Test Circuit

Fig 22b. Unclamped Inductive Waveforms

Fig 23a. Switching Time Test Circuit

Fig 23b. Switching Time Waveforms

Id

Vds

Vgs

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 24b. Gate Charge Waveform

Fig 24a. Gate Charge Test Circuit

7

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June 14, 2013

IRFS4321-7PPbF

D²Pak-7Pin Package Outline (Dimensions are shown in millimeters (inches))

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

8

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June 14, 2013

IRFS4321-7PPbF

D²Pak-7Pin Part Marking Information

D2Pak-7Pin Tape and Reel

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

9

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June 14, 2013

IRFS4321-7PPbF

Qualification Information^†

Qualification Level

Industrial

(per JEDEC JESD47F) ^††

D²Pak-7Pin

MSL1

Yes

Moisture Sensitivity Level

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/

†† Applicable version of JEDEC standard at the time of product release.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

10

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June 14, 2013


型号：	IRFS4321-7PPBF_15
厂家：	Infineon
描述：	Motion Control Applications
文件：	总10页 (文件大小：410K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRFS4321-7PPBF_15 [INFINEON]

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