IRFS4321TRRPBF [INFINEON]
Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3;
| 型号： | IRFS4321TRRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：355K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97105C
IRFS4321PbF
IRFSL4321PbF
HEXFET® Power MOSFET
Applications
l Motion Control Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l Hard Switched and High Frequency Circuits
VDSS
RDS(on) typ.
150V
12m
15m
85A
:
:
c
max.
Benefits
ID
l Low RDSON Reduces Losses
l Low Gate Charge Improves the Switching
Performance
l Improved Diode Recovery Improves Switching &
EMI Performance
D
S
D
D
l 30V Gate Voltage Rating Improves Robustness
l Fully Characterized Avalanche SOA
S
S
D
G
D
G
G
D2Pak
IRFS4321PbF
TO-262
IRFSL4321PbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current d
Max.
85 c
60
Units
A
330
PD @TC = 25°C
350
Maximum Power Dissipation
Linear Derating Factor
W
2.3
W/°C
V
VGS
±30
Gate-to-Source Voltage
Single Pulse Avalanche Energy e
EAS (Thermally limited)
120
mJ
°C
TJ
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
300
Thermal Resistance
Parameter
Junction-to-Case g
Junction-to-Ambient g
Typ.
Max.
0.43*
40
Units
RθJC
RθJA
–––
–––
°C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes through ꢀare on page 2
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1
12/9/10
IRFS_SL4321PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
150 ––– –––
––– 150 ––– mV/°C Reference to 25°C, ID = 1mA
Conditions
VGS = 0V, ID = 250μA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
ΔV(BR)DSS/ΔTJ
RDS(on)
–––
3.0
12
15
5.0
20
VGS = 10V, ID = 33A
mΩ
V
VGS(th)
–––
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source Leakage Current
––– –––
––– –––
μA VDS = 150V, VGS = 0V
1.0
mA VDS = 150V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
––– ––– 100
––– ––– -100
nA
V
GS = 20V
VGS = -20V
RG(int)
–––
0.8
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
130 ––– –––
Conditions
VDS = 25V, ID = 50A
S
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
71
24
110
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC ID = 50A
VDS = 75V
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
21
VGS = 10V
18
ns VDD = 98V
ID = 50A
60
td(off)
tf
Turn-Off Delay Time
Fall Time
25
RG = 2.5Ω
VGS = 10V
35
Ciss
Coss
Crss
Input Capacitance
pF VGS = 0V
VDS = 50V
4460
390
82
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0MHz
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
85
IS
D
S
Continuous Source Current
––– –––
A
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
ISM
––– ––– 330
A
(Body Diode)
Diode Forward Voltage
p-n junction diode.
TJ = 25°C, IS = 50A, VGS = 0V
ID = 50A
VSD
trr
––– –––
––– 89
1.3
V
ns
nC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
130
Qrr
IRRM
ton
VR = 128V,
di/dt = 100A/μs
––– 300 450
––– 6.5 –––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width ≤ 400μs; duty cycle ≤ 2%.
ꢀ Rθ is measured at TJ approximately 90°C
Calculated continuous current based on maximum allowable junction
temperature. Package limitation current is 75A
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.096mH
RG = 25Ω, IAS = 50A, VGS =10V. Part not recommended for use
above this value.
2
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IRFS_SL4321PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM
BOTTOM
5.0V
1
≤ 60μs PULSE WIDTH
Tj = 175°C
≤ 60μs PULSE WIDTH
Tj = 25°C
5.0V
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1000
100
10
I
= 50A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
= 25V
J
1
V
DS
≤ 60μs PULSE WIDTH
0.1
3.0
4.0
V
5.0
6.0
7.0
8.0
9.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
7000
6000
5000
4000
3000
2000
1000
0
20
V
C
= 0V,
f = 1 MHZ
GS
I
= 50A
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 120V
C
= C
DS
rss
gd
16
12
8
VDS= 75V
VDS= 30V
C
= C + C
ds
oss
gd
Ciss
Coss
4
Crss
V
0
0
20
40
60
80
100
120
1
10
100
Q
Total Gate Charge (nC)
G
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFS_SL4321PbF
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100μsec
1msec
100
T
= 175°C
J
10
1
10msec
T
= 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
V
= 0V
GS
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
V
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
190
180
170
160
150
140
90
80
70
60
50
40
30
20
10
0
LIMITED BY PACKAGE
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T
, Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
5.0
4.0
3.0
2.0
1.0
0.0
500
I
D
TOP
13A
20A
50A
400
300
200
100
0
BOTTOM
0
20
40
60
80
100 120 140 160
25
50
75
100
125
150
175
V
Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS,
J
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
4
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IRFS_SL4321PbF
1
D = 0.50
0.20
0.1
R1
R1
R2
R2
R3
R3
τι (sec)
0.10
Ri (°C/W)
τ
J τJ
τ
τ
Cτ
0.085239 0.000052
0.18817 0.00098
0.176912 0.008365
0.05
0.02
0.01
τ
1τ1
τ
2τ2
3τ3
Ci= τi/Ri
Ci= τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Allowed avalanche Current vs avalanche
Duty Cycle = Single Pulse
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
120
100
80
60
40
20
0
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1% Duty Cycle
= 50A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
IRFS_SL4321PbF
6.0
40
30
20
10
0
I
I
I
= 1.0A
D
D
D
= 1.0mA
= 250μA
5.0
4.0
3.0
2.0
1.0
I
= 33A
F
V
= 128V
R
T
= 125°C
= 25°C
J
T
J
100 200 300 400 500 600 700 800 900 1000
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
di / dt - (A / μs)
T
f
J
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage Vs. Temperature
40
3200
2800
2400
2000
1600
1200
800
30
20
I
= 50A
I
= 33A
F
F
10
0
V
= 128V
V
= 128V
R
R
T
= 125°C
= 25°C
T
= 125°C
= 25°C
J
400
J
T
T
J
J
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / μs)
di / dt - (A / μs)
f
f
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
3200
2800
2400
2000
1600
1200
800
I
= 50A
F
V
= 128V
= 125°C
= 25°C
R
T
400
J
J
T
0
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / μs)
f
Fig. 20 - Typical Stored Charge vs. dif/dt
6
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IRFS_SL4321PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
0.01Ω
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1μs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
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7
IRFS_SL4321PbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
PART NUMBER
LOT CODE 8024
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
ASSEMBLY
LOT CODE
LINE L
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
For GB Production
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
LOT CODE
8
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IRFS_SL4321PbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches))
TO-262 Part Marking Infor
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
ASSEMBLED ON WW 19, 1997
RECTIFIER
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
AS S E MB L Y
LOT CODE
LINE C
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
DATE CODE
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
YEAR 7 = 1997
AS S E MB L Y
LOT CODE
WEE K 19
A = AS S E MB L Y S IT E CODE
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9
IRFS_SL4321PbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/2010
10
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