IRFSL4229PBF [INFINEON]
High Repetitive Peak Current Capability for Reliable Operation; 高重复峰值电流能力可靠运行
| 型号： | IRFSL4229PBF |
| 厂家： | 
Infineon |
| 描述： | High Repetitive Peak Current Capability for Reliable Operation |
| 文件： | 总8页 (文件大小：280K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96285
IRFSL4229PbF
Features
Key Parameters
l
l
l
Advanced Process Technology
Low QG for Fast Response
High Repetitive Peak Current Capability for
Reliable Operation
VDS min
250
300
42
V
V
m
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
TJ max
l
Short Fall & Rise Times for Fast Switching
91
A
l175°C Operating Junction Temperature for
175
°C
Improved Ruggedness
l
Repetitive Avalanche Capability for Robustness
D
D
and Reliability
S
D
G
G
TO-262
IRFSL4229PbF
S
G
D
S
Gate
Drain
Source
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve low on-resistance
per silicon area. Additional features of this MOSFET are 175°C operating juntion temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust
and reliable device.
Absolute Maximum Ratings
Max.
Parameter
Units
VGS
±30
Gate-to-Source Voltage
V
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
45
A
32
180
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
91
Repetitive Peak Current
330
Power Dissipation
W
190
Power Dissipation
2.2
Linear Derating Factor
W/°C
°C
TJ
-40 to + 175
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lb in (1.1N m)
N
Thermal Resistance
Parameter
Typ.
Max.
0.45*
62
Units
Junction-to-Case
Rθ
Rθ
–––
–––
JC
Junction-to-Ambient
JA
* RθJC (end of life) for TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes through ꢀare on page 8
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1
01/04/10
IRFSL4229PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
250
–––
–––
3.0
–––
210
42
–––
V
∆ΒVDSS/∆TJ
RDS(on)
––– mV/°C
V
GS = 10V, ID = 26A
48
m
Ω
VDS = VGS, ID = 250µA
VGS(th)
–––
-14
–––
–––
–––
–––
–––
72
5.0
V
V
/ T
∆
J
∆
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
83
––– mV/°C
GS(th)
VDS = 250V, VGS = 0V
IDSS
20
µA
VDS = 250V, VGS = 0V, TJ = 125°C
200
VGS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
V
V
V
GS = -20V
-100
DS = 25V, ID = 26A
DD = 125V, ID = 26A, VGS = 10V
gfs
Qg
Qgd
td(on)
tr
–––
110
–––
–––
–––
–––
–––
–––
S
–––
–––
–––
–––
–––
–––
100
nC
Gate-to-Drain Charge
Turn-On Delay Time
26
VDD = 125V, VGS = 10V
18
ID = 26A
Rise Time
31
ns
ns
µJ
R = 2.4
td(off)
tf
Ω
Turn-Off Delay Time
30
G
See Fig. 22
Fall Time
21
VDD = 200V, VGS = 15V, R = 4.7
tst
Ω
Shoot Through Blocking Time
–––
G
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 200V, R = 4.7 TJ = 25°C
–––
790
–––
EPULSE
Ω,
L = 220nH, C= 0.3µF, VGS = 15V
Energy per Pulse
G
––– 1390 –––
––– 4560 –––
VDS = 200V, R = 4.7
TJ = 100°C
Ω,
G
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
VDS = 25V
Output Capacitance
–––
–––
–––
390
100
290
–––
–––
–––
pF
nH
ƒ = 1.0MHz,
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
VGS = 0V, VDS = 0V to 200V
Coss eff.
LD
Between lead,
D
S
–––
–––
4.5
7.5
–––
–––
and center of die contact
G
LS
Internal Source Inductance
Avalanche Characteristics
Typ.
–––
–––
300
–––
Max.
130
33
Parameter
Units
mJ
mJ
V
EAS
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Avalanche Current
EAR
VDS(Avalanche)
IAS
–––
26
A
Diode Characteristics
Conditions
Parameter
Min. Typ. Max. Units
IS @ TC = 25°C
ISM
MOSFET symbol
Continuous Source Current
–––
–––
45
showing the
(Body Diode)
A
integral reverse
p-n junction diode.
Pulsed Source Current
(Body Diode)
–––
–––
180
TJ = 25°C, IS = 26A, VGS = 0V
TJ = 25°C, IF = 26A, VDD = 50V
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
190
1.3
V
290
ns
nC
Qrr
840 1260
2
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IRFSL4229PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
8.0V
7.0V
6.5V
6.0V
BOTTOM
BOTTOM
5.5V
5.5V
5.5V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 175°C
≤
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1000
I
= 26A
D
V
= 10V
GS
100
10
T
= 175°C
J
1
T
= 25°C
J
0.1
0.01
V
= 25V
DS
60µs PULSE WIDTH
≤
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
V
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
1600
1400
L = 220nH
C = Variable
L = 220nH
C = 0.3µF
100°C
1200
100°C
25°C
25°C
1200
800
400
0
1000
800
600
400
200
0
150
160
170
180
190
200
100
110
120
130
140
150
160
170
V
Drain-to -Source Voltage (V)
I
Peak Drain Current (A)
DS,
D,
Fig 6. Typical EPULSE vs. Drain Current
Fig 5. Typical EPULSE vs. Drain-to-Source Voltage
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IRFSL4229PbF
2000
1000
100
10
L = 220nH
C= 0.3µF
1600
C= 0.2µF
C= 0.1µF
T
= 175°C
J
1200
800
400
0
1
T
= 25°C
0.8
J
V
= 0V
GS
0.1
25
50
75
100
125
150
0.2
0.4
0.6
1.0
1.2
Temperature (°C)
V
, Source-to-Drain Voltage (V)
SD
Fig 7. Typical EPULSE vs.Temperature
Fig 8. Typical Source-Drain Diode Forward Voltage
20
7000
6000
5000
4000
3000
2000
1000
0
V
C
= 0V,
f = 1 MHZ
I = 26A
D
GS
= C + C , C SHORTED
iss
gs
gd ds
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
C
C
= C
rss
oss
gd
16
12
8
= C + C
ds
gd
Ciss
Coss
Crss
4
0
0
20
40
60
80
100
120
1
10
100
1000
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance vs.Drain-to-Source Voltage
Fig 10. Typical Gate Charge vs.Gate-to-Source Voltage
50
40
30
20
10
0
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1µsec
100
10
1
100µsec
10µsec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
25
50
75
100
125
150
175
1
10
100
1000
T , Junction Temperature (°C)
V
, Drain-to-Source Voltage (V)
J
DS
Fig 12. Maximum Safe Operating Area
Fig 11. Maximum Drain Current vs. Case Temperature
4
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IRFSL4229PbF
600
500
400
300
200
100
0
0.40
0.30
0.20
0.10
0.00
I
I
= 26A
D
D
TOP
7.4A
13A
26A
BOTTOM
T
= 125°C
= 25°C
J
T
J
5
6
7
8
9
10
25
50
75
100
125
150
175
V
, Gate-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
GS
J
Fig 13. On-Resistance Vs. Gate Voltage
Fig 14. Maximum Avalanche Energy Vs. Temperature
5.0
140
ton= 1µs
Duty cycle = 0.25
4.5
4.0
120
Half Sine Wave
Square Pulse
100
I
= 250µA
D
3.5
3.0
2.5
2.0
1.5
80
60
40
20
0
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
25
50
75
100
125
150
175
Case Temperature (°C)
T
Fig 16. Typical Repetitive peak Current vs.
Fig 15. Threshold Voltage vs. Temperature
Case temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
τι
Ri (°C/W)
(sec)
τ
J τJ
τ
τ
Cτ
0.080717 0.000052
0.209555 0.001021
0.159883 0.007276
τ
1 τ1
τ
2 τ2
3τ3
0.02
0.01
Ci= τi/Ri
Ci= τi/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFSL4229PbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
***
V
=10V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
*
VDD
**
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 18. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
I
AS
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
Id
Vds
Vgs
L
VCC
DUT
0
1K
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 20a. Gate Charge Test Circuit
Fig 20b. Gate Charge Waveform
6
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IRFSL4229PbF
PULSE A
PULSE B
A
RG
C
DRIVER
L
VCC
B
Ipulse
DUT
RG
tST
Fig 21b. tst Test Waveforms
Fig 21a. tst and EPULSE Test Circuit
Fig 21c. EPULSE Test Waveforms
RD
V
DS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
V
GS
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
t
t
r
t
t
f
d(on)
d(off)
Fig 22a. Switching Time Test Circuit
Fig 22b. Switching Time Waveforms
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IRFSL4229PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 26A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ Half sine wave with duty cycle = 0.25, ton=1µsec.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/2010
8
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