IRFY340CM [INFINEON]
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=8.7A); 功率MOSFET N沟道（ BVDSS = 400V ， RDS（ON） = 0.55ohm ，ID = 8.7A ）
| 型号： | IRFY340CM |
| 厂家： | 
Infineon |
| 描述： | POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=0.55ohm, Id=8.7A) |
| 文件： | 总6页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD 9.1290B
HEXFET® POWER MOSFET
IRFY340CM
N-CHANNEL
400 Volt, 0.55Ω HEXFET
Product Summary
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
Part Number
BV
R
I
D
DSS
DS(on)
IRFY340CM
400V
0.55Ω
8.7A
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability. They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
Features
n Hermetically Sealed
n Electrically Isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic Eyelets
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink. This improves thermal effi-
ciency and reduces drain capacitance.
Absolute Maximum Ratings
Parameter
IRFY340CM
Units
I
@ V =10V, T = 25°C
GS
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
8.7
5.5
35
D
C
I
D
@ V =10V, T = 100°C
GS
A
C
I
DM
@ T = 25°C
P
100
0.8
±20
W
W/Kꢀ
V
D
C
V
GS
E
Single PulseAvalance Energy
Avalance Current
520
8.7
mJ
AS
I
A
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
10
mJ
AR
dv/dt
4.0
V/ns
T
T
-55 to 150
J
Storage Temperature Range
LeadTemperature
°C
stg
300 (0.063 in (1.6mm) from
case for 10 sec)
°C
g
Weight
4.3 (typical)
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IRFY340CM Device
Electrical Characteristics@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min. Typ. Max. Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
400
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T
Temperature Coefficient of Breakdown
Voltage
0.46
DSS
J
D
R
Static Drain-to-Source
On-State Resistance
—
—
—
—
—
—
—
—
0.55
0.63
4.0
—
Ω
V
= 10V, I = 5.5A
DS(on)
GS D
V
V
V
= 10V, I = 8.7A
D
GS
DS
DS
V
GateThreshold Voltage
ForwardTransconductance
Zero Gate Voltage Drain Current
2.0
4.9
—
V
= V , I = 250µA
GS(th)
GS D
Ω
g
fs
S ( )
≥ 15V, I = 5.5A
DS
I
25
VDS = 0.8 x max. rating,VGS = 0V
DSS
µA
—
250
V
V
= 0.8 x max. rating
DS
GS
= 0V, T = 25°C
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
65
V
= 20V
GSS
GS
nA
nC
I
V
= -20V
GSS
GS
GS
DS
Q
32
V
V
= 10V, I = 8.7A
D
= Max. Rating x 0.5
g
Q
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On DelayTime
2.2
13.8
—
10
gs
gd
Q
40.5
25
see figures 6 and 13
t
V
= 200V, I = 8.7A, R = 9.1Ω
d(on)
tr
DD
D
G
RiseTime
—
92
V
GS
= 10V
ns
t
Turn-Off DelayTime
—
79
d(off)
t
FallTime
—
58
see figure 10
f
L
Internal Drain Inductance
—
—
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
symbol
Modified MOSFET
showing the internal
D
inductanc
nH
L
Internal Source Inductance
—
8.7
—
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
S
C
C
Input Capacitance
—
—
—
1400
350
—
—
—
V
= 0v, V
= 25V
DS
iss
GS
Output Capacitance
pF f = 1.0MHz.
oss
C
rss
ReverseTransfer Capacitance
230
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
symbol showing the
Modified MOSFET
integral reverse p-n junction rectifier.
I
Continuous Source Current (Body Diode)
—
—
—
—
8.7
35
S
A
I
Pulse Source Current (Body Diode)
SM
V
Diode Forward Voltage
Reverse RecoveryTime
Reverse Recovery Charge
—
—
—
—
—
—
1.5
600
5.6
V
T = 25°C, I = 8.7A, V
= 0V
j
SD
S
GS
t
rr
ns T = 25°C, I = 8.7A, di/dt ≤ 100 A/µs
j
F
Q
µC
V
≤ 50 V
RR
DD
t
ForwardTurn-OnTime
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min. Typ. Max. Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
—
—
—
—
—
1.25
thJC
80 K/Wꢀ
Typical socket mount
thJA
R
thCS
0.21
—
Mounting surface flat, smooth
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IRFY340CM Device
Fig. 1 — Typical Output Characteristics
TC = 25°C
Fig. 2 — Typical Output Characteristics
TC = 150°C
I
= 8.7A
D
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs. Temperature
I
= 8.7A
D
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
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IRFY340CM Device
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10µs
100µs
1ms
10ms
T
T
= 25°C
= 150°C
C
J
Single Pulse
0.1
A
1000
10
100
VDS , Drain-to-Source Voltage (V)
Fig. 7 — Typical Source-to-Drain Diode
Forward Voltage
Fig. 8 — Maximum Safe Operating Area
1 0
8
6
4
2
0
A
150
2 5
5 0
7 5
100
125
TC, Case Temperature (°C)
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 10a — Switching Time Test Circuit
Fig. 10b — Switching Time Waveforms
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IRFY340CM Device
10
1
D = 0.50
0.20
0.10
P
DM
0.1
t
0.05
1
t
0.02
0.01
2
Notes:
1.Dutyfactor D = t / t
SINGLE PULSE
1
2
(THERMAL RESPONSE)
2. Peak T = P x Z
J
+ T
C
DM thJC
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
V
(BR)DSS
DRIVER
+
L
V
DS
t
p
D.U.T
R
G
V
DD
-
I
A
AS
Ω
0.01
t
p
I
AS
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
600
500
400
300
200
100
I
= 10A
D
V
= 50V
DD
0
A
150
25
50
75
100
125
Starting T , Junction Temperature (°C)
J
Fig. 12c — Max. Avalanche Energy vs. Current
Fig. 13a — Gate Charge Test Circuit
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Notes:
IRFY340CM Device
Repetitive Rating; Pulse width limited by maximum
junction temperature (see figure 11).
@ V
= 50V, Starting T = 25°C,
J
DD
= [0.5
E
L
(
)
[BV
/(BV
-V )]
DSS DD
AS
*
*
*
DSS
Peak I = 8.7A, V
= 10V, 25 ≤ R ≤ 200Ω (figure 12)
L
GS
G
I
≤ 8.7A, di/dt ≤ 120A/µs, V
≤ BV , T ≤ 150°C
DSS J
SD
DD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
ꢀ K/W = °C/W W/K = W/°C
Fig. 13b — Basic Gate Charge Waveform
Case Outline and Dimensions — TO-257AA
Pin 1 - Drain
Pin 2 - Source
Pin 3 - Gate
3
2
1
TO-257AA
NON-STANDARD PIN CONFIGURATION
NOTES:
Pin 1 - Gate
1. Dimensioning and tolerancing per ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4. Outline conforms to JEDEC outline TO-257AA
Pin 2 - Drain
Pin 3 - Source
Order Part Type IRFY340C
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
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Data and specifications subject to change without notice.
6/96
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