IRFY440CMPBF [INFINEON]
Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3;型号: | IRFY440CMPBF |
厂家: | Infineon |
描述: | Power Field-Effect Transistor, 7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, CERAMIC PACKAGE-3 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
文件: | 总6页 (文件大小:269K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Provisional Data Sheet No. PD 9.1292B
HEXFET® POWER MOSFET
IRFY440CM
N-CHANNEL
500 Volt, 0.85Ω HEXFET
Product Summary
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry design achieves very low on-state re-
sistance combined with high transconductance.
Part Number
BV
R
I
D
DSS
DS(on)
IRFY440CM
500V
0.85Ω
7.0A
HEXFET transistors also feature all of the well-estab-
lished advantages of MOSFETs, such as voltage con-
trol, very fast switching, ease of paralleling and electri-
cal parameter temperature stability.They are well-suited
for applications such as switching power supplies, mo-
tor controls, inverters, choppers, audio amplifiers, high
energy pulse circuits, and virtually any application where
high reliability is required.
Features
n Hermetically sealed
n Electrically isolated
n Simple Drive Requirements
n Ease of Paralleling
n Ceramic eyelets
The HEXFET transistor’s totally isolated package elimi-
nates the need for additional isolating material between
the device and the heatsink.This improves thermal effi-
ciency and reduces drain capacitance.
Absolute Maximum Ratings
Parameter
IRFY440CM
Units
I
I
I
@ V =10V, T = 25°C
GS
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
7.0
4.4
28
D
C
@ V =10V, T = 100°C
GS
A
D
C
DM
P
@ T = 25°C
100
0.8
±20
W
W/Kꢀ
V
D
C
V
E
GS
AS
Single Pulse Avalance Energy
Avalance Current
510
7.0
mJ
I
A
AR
E
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
10
mJ
AR
dv/dt
3.5
V/ns
T
T
-55 to 150
J
Storage Temperature Range
°C
g
stg
LeadTemperature
Weight
300 (0.063 in (1.6mm) from case for 10 sec)
4.3(typical)
To Order
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IRFY440CM Device
Index
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Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
500
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T
Temperature Coefficient of Breakdown
Voltage
0.78
DSS
J
D
R
Static Drain-to-Source
—
—
—
—
—
—
—
—
0.85
0.95
4.0
—
V
V
V
V
= 10V, I = 4.4A
D
DS(on)
GS
GS
DS
DS
Ω
On-State Resistance
= 10V, I = 7.0A
D
V
Gate Threshold Voltage
ForwardTransconductance
Zero Gate Voltage Drain Current
2.0
4.7
—
V
= V , I
GS
=
250µA
GS(th)
fs
D
Ω
g
S ( )
≥ 15V, I
= 4.4A
DS
I
25
VDS = 0.8 x max. rating,VGS = 0V
DSS
µA
—
250
V
= 0.8 x max. rating
DS
V
= 0V, T = 125°C
GS
J
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
68.5
12.5
42.4
21
V
V
V
V
= 20V
GSS
GS
GS
GS
DS
nA
nC
I
= -20V
GSS
Q
27.3
2.0
11.1
—
= 10V, I = 7.0A
D
= Max. Rating x 0.5
g
Q
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On DelayTime
gs
gd
Q
see figures 6 and 13
t
V
DD
= 250V, I = 7.0A, R = 9.1Ω
d(on)
tr
D
G
Rise Time
—
73
V
= 10V
GS
ns
t
Turn-Off Delay Time
—
72
d(off)
t
f
L
Fall Time
—
51
see figure 10
Internal Drain Inductance
—
—
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
symbol
Modified MOSFET
showing the internal
D
S
inductanc
nH
L
Internal Source Inductance
—
8.7
—
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
C
C
C
Input Capacitance
—
—
—
1300
310
—
—
—
V
= 0v, V = 25V
DS
iss
GS
f = 1.0MHz.
see figure 5
Output Capacitance
pF
oss
rss
ReverseTransfer Capacitance
120
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
symbol showing the
Modified MOSFET
integral reverse p-n junction rectifier.
I
Continuous Source Current (Body Diode)
—
—
—
—
7.0
28
S
A
I
Pulse Source Current (Body Diode)
SM
V
t
Diode ForwardVoltage
Reverse RecoveryTime
Reverse Recovery Charge
—
—
—
—
—
—
1.5
700
8.9
V
T = 25°C, I = 7.0A, V
= 0V
j
SD
S
GS
ns T = 25°C, I = 7.0A, di/dt ≤ 100 A/µs
j
rr
F
Q
µC
V
≤ 50 V
DD
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
—
—
—
—
—
1.25
80
thJC
thJA
thCS
K/W
Typical socket mount
0.21
—
Mounting surface flat, smooth
To Order
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IRFY440CM Device
Fig. 1 — Typical Output Characteristics
TC = 25°C
Fig. 2 —Typical Output Characteristics
TC = 150°C
7A
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance Vs.Temperature
7A
Fig. 5 — Typical Capacitance Vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge Vs. Gate-to-Source
Voltage
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IRFY440CM Device
Index
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Fig. 7 — Typical Source-to-Drain Diode Forward
Voltage
Fig. 8 — Maximum Safe Operating Area
8
6
4
2
0
A
1 5 0
2 5
5 0
7 5
1 0 0
1 2 5
T
, C ase Te m p era tu re (°C )
C
Fig. 9 — Maximum Drain Current Vs. Case Temperature
Fig. 10a — Switching Time Test Circuit
Fig. 10b — Switching Time Waveforms
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IRFY440CM Device
10
1
D
= 0.50
0 .2 0
0 .1 0
0.05
0.1
0.02
0.01
SIN G LE P U LSE
(T H ER M A L R ESP ON S E)
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t
, R ectangu lar P ulse D ura tion (se c)
1
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
V
(BR)DSS
D R IVE R
L
t
V
p
D S
D .U .T
R
+
-
G
V
D D
I
A
A S
Ω
0.01
t
p
I
AS
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
Fig. 12c — Max. Avalanche Energy vs. Current
Fig. 13a — Gate ChargeTest Circuit
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IRFY440CM Device
Index
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Notes:
Repetitive Rating; Pulse width limited by maximum junc-
tion
temperature (see figure 11).
@ V
DD
= 50V, Starting T = 25°C,
J
E
= [0.5
L
(
)
[BV
/(BV
-V )]
DSS DD
AS
*
*
*
DSS
Peak I = 7A, V
= 10V, 25 ≤ R ≤ 200Ω
L
GS
G
I
≤ 7.0A, di/dt ≤ 100A/µs, V
≤ BV
, T ≤ 150°C
DSS J
SD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
ꢀ K/W = °C/W W/K = W/°C
DD
Fig. 13b — Basic Gate Charge Waveform
Case Outline and Dimensions
Pin 1 - Drain
Pin 2 - Source
Pin 3 - Gate
3
2
1
TO-257AA
NON-STANDARD PIN CONFIGURATION
NOTES:
Pin 1 - Gate
Pin 2 - Drain
Pin 3 - Source
1. Dimensioning and tolerancing per ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4. Outline conforms to JEDEC outline TO-257AA
Order Part Type IRFY440C
CAUTION
BERYLLIAWARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined or have other operations performed on them which
will produce beryllia or beryllium dust.Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
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http://www.irf.com/
Data and specifications subject to change without notice.
To Order
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