IRFZ34NS [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFZ34NS |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95571
IRFZ34NSPbF
IRFZ34NLPbF
l Advanced Process Technology
l SurfaceMount(IRFZ34NS)
l Low-profilethrough-hole(IRFZ34NL)
l 175°C Operating Temperature
l Fast Switching
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 0.040Ω
l Fully Avalanche Rated
l Lead-Free
G
ID = 29A
Description
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewellknownfor, providesthedesignerwithanextremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34NL) is available for low-
profileapplications.
2
TO-262
D
Pak
Absolute Maximum Ratings
Parameter
Max.
29
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10Vꢀ
Continuous Drain Current, VGS @ 10Vꢀ
Pulsed Drain Current ꢀ
20
A
100
3.8
68
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
Linear Derating Factor
0.45
± 20
130
16
W/°C
V
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energyꢀ
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ꢀ
Operating Junction and
5.6
5.0
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
2.2
Units
RθJC
RθJA
°C/W
Junction-to-Ambient (PCB mount) **
40
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1
07/19/04
IRFZ34NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.052 V/°C Reference to 25°C, ID = 1mAꢀ
RDS(ON)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
0.040
2.0 4.0
6.5
25
250
100
-100
34
6.8
14
7.0
49
31
40
Ω
V
S
VGS = 10V, ID = 16A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 16A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 16A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13 ꢀ
VDD = 28V
RiseTime
ID = 16A
ns
td(off)
tf
Turn-Off Delay Time
FallTime
RG = 18Ω
RD = 1.8Ω, See Fig. 10 ꢀ
Between lead,
and center of die contact
VGS = 0V
nH
pF
LS
Internal Source Inductance
7.5
Ciss
Coss
Crss
Input Capacitance
700
240
100
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5ꢀ
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFETsymbol
D
IS
29
A
showing the
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
100
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
1.6
57 86
130 200
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
TJ = 25°C, IS = 16A, VGS = 0V
ns
TJ = 25°C, IF = 16A
Qrr
ton
nC di/dt = 100A/µs ꢀ
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 16 A, di/dt ≤ 420A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 610µH
RG = 25Ω, IAS = 16A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ Uses IRFZ34N data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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IRFZ34NS/LPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
J
T = 175°C
J
1
0.1
A
1
0.1
A
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.4
2.0
1.6
1.2
0.8
0.4
0.0
100
10
1
I
= 26A
D
TJ = 25°C
T = 175°C
J
VDS = 25V
20µs PULSE WIDTH
V
= 10V
GS
A
10A
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
4
5
6
7
8
9
T
, Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFZ34NS/LPbF
1200
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= 16A
D
GS
iss
= C + C
,
C
SHORTED
gs
gd
ds
V
V
= 44V
= 28V
DS
DS
= C
rss
oss
gd
1000
800
600
400
200
0
= C + C
C
ds
gd
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
10
20
30
40
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
10µs
T = 175°C
J
100µs
T = 25°C
J
1ms
T
T
= 25°C
= 175°C
C
J
10ms
Single Pulse
V
GS
= 0V
A
1
A
100
0.4
0.8
1.2
1.6
2.0
1
10
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFZ34NS/LPbF
RD
VDS
VGS
30
25
20
15
10
5
D.U.T.
RG
+ VDD
-
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
10%
25
50
75
100
125
150
175
V
GS
°
T , Case Temperature ( C)
C
t
t
r
t
t
f
d(on)
d(off)
Fig 10b. Switching Time Waveforms
Fig 9. Maximum Drain Current Vs.
CaseTemperature
10
D = 0.50
0.20
1
0.10
0.05
P
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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5
IRFZ34NS/LPbF
250
200
150
100
50
I
D
TOP
6.5A
11A
BOTTOM 16A
L
V
DS
D.U.T.
R
+
-
G
V
DD
I
10V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V
= 25V
50
DD
0
A
175
V
(BR)DSS
25
75
100
125
150
Starting T , Junction Temperature (°C)
t
J
p
V
DD
Fig 12c. Maximum Avalanche Energy
V
DS
Vs. Drain Current
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
V
10 V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFZ34NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig14.ForN-ChannelHEXFETS
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7
IRFZ34NS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASS EMBLED ON WW 02, 2000
IN THE ASSEMBLYLINE "L"
F530S
DAT E CODE
YEAR 0 = 2000
WEEK 02
Note: "P" in as sembly line
pos ition indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MB L Y
LOT CODE
WEEK 02
A = AS S E MB L Y S IT E CODE
8
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IRFZ34NS/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
AS S E MB L E D ON WW 19, 1997
IN THE ASSEMBLYLINE "C"
DATE CODE
YEAR 7 = 1997
WE E K 19
Note: "P" in assembly line
position indicates "Lead-Free"
AS S E MB L Y
LOT CODE
LINE C
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
AS S E MB LY
LOT CODE
WEEK 19
A = AS S E MB LY S IT E CODE
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9
IRFZ34NS/LPbF
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
10
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