IRFZ44NPBF [INFINEON]
HEXFET-R Power MOSFET; HEXFET -R功率MOSFET
| 型号： | IRFZ44NPBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET-R Power MOSFET |
| 文件： | 总8页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94787
IRFZ44NPbF
HEXFET® Power MOSFET
ꢀ Advanced Process Technology
ꢀ Ultra Low On-Resistance
ꢀ Dynamic dv/dt Rating
ꢀ 175°C Operating Temperature
ꢀ Fast Switching
D
VDSS = 55V
RDS(on) = 17.5mΩ
ꢀ Fully Avalanche Rated
ꢀ Lead-Free
G
ID = 49A
S
Description
AdvancedHEXFET® PowerMOSFETsfromInternational
Rectifierutilizeadvancedprocessingtechniquestoachieve
extremelylowon-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
knownfor,providesthedesignerwithanextremelyefficient
andreliabledeviceforuseinawidevarietyofapplications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ꢀ
49
35
160
A
PD @TC = 25°C
Power Dissipation
94
W
W/°C
V
Linear Derating Factor
0.63
VGS
IAR
Gate-to-Source Voltage
± 20
Avalanche Currentꢀ
25
A
EAR
dv/dt
TJ
Repetitive Avalanche Energyꢀ
Peak Diode Recovery dv/dt ꢁ
Operating Junction and
9.4
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
Units
RθJC
RθCS
RθJA
1.5
–––
62
°C/W
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1
10/31/03
IRFZ44NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 17.5 mΩ VGS = 10V, ID = 25A ꢀ
2.0
19
––– 4.0
––– –––
V
S
VDS = VGS, ID = 250µA
VDS = 25V, ID = 25Aꢀ
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 63
––– ––– 14
––– ––– 23
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 25A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
12 –––
60 –––
44 –––
45 –––
VDD = 28V
ID = 25A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 12Ω
VGS = 10V, See Fig. 10 ꢀ
Between lead,
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
D
S
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
G
7.5
Ciss
Coss
Crss
EAS
Input Capacitance
––– 1470 –––
––– 360 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energyꢀ
–––
88 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 530ꢁ150ꢂ mJ IAS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
49
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)ꢀ
integral reverse
p-n junction diode.
160
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 63 95
––– 170 260
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
TJ = 25°C, IS = 25A, VGS = 0V ꢂ
ns
TJ = 25°C, IF = 25A
Qrr
ton
nC di/dt = 100A/µs ꢂ
Notes:
ꢁ ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
ꢀ Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
ꢂ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢄ This is a typical value at device destruction and represents
operation outside rated limits.
ꢃ Starting TJ = 25°C, L = 0.48mH
RG = 25Ω, IAS = 25A. (See Figure 12)
ꢅ This is a calculated value limited to TJ = 175°C .
2
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IRFZ44NPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 175 C
J
T = 25 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
49A
=
I
D
2.0
1.5
1.0
0.5
0.0
°
T = 25 C
J
100
10
1
°
T = 175 C
J
V
= 25V
DS
20µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
4
5
6
7
8
9
10
11
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFZ44NPbF
20
16
12
8
2500
I
D
=
25A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
C
= C + C
iss
gs
gd ,
V
= 44V
= 27V
= 11V
DS
C
= C
rss
gd
V
DS
C
= C + C
2000
1500
1000
500
0
oss
ds
gd
V
DS
C
iss
C
C
oss
4
rss
0
1
10
100
0
10
20
30
40
50
60
70
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
10
1
100
10
1
°
T = 175 C
J
100µsec
1msec
°
T = 25 C
J
Tc = 25°C
10msec
Tj = 175°C
Single Pulse
V
= 0 V
GS
0.1
0.1
0.0
0.6
1.2
1.8
2.4
1
10
, Drain-toSource Voltage (V)
100
V
,Source-to-Drain Voltage (V)
SD
V
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFZ44NPbF
50
40
30
20
10
0
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
T , Case Temperature ( C)
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.1
0.01
t
1
SINGLE PULSE
0.02
0.01
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFZ44NPbF
300
240
180
120
60
15V
I
D
TOP
10A
18A
BOTTOM 25A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
G
+
VGS
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRFZ44NPbF
Peak Diode Recovery dv/dt Test Circuit
+
ꢀ
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T*
+
ꢂ
-
ꢁ
-
+
ꢃ
RG
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
VDD
VGS
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
[
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
]
SD
Ripple ≤ 5%
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For N-channel HEXFET® power MOSFETs
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7
IRFZ44NPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
- B -
3.78 (.149)
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
- A -
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/03
8
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