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IRG4BC20MDS_07 [INFINEON]

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
IRG4BC20MDS_07
型号： IRG4BC20MDS_07
厂家： Infineon    Infineon
描述：

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
绝缘栅双极型晶体管，超快软恢复二极管

晶体 二极管 双极型晶体管 栅 超快软恢复二极管 快速软恢复二极管
文件： 总12页 (文件大小：295K)
中文：  中文翻译
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PD -95564  
IRG4BC20MD-SPbF  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
Features  
Short Circuit Rated  
Fast IGBT  
C
• Rugged: 10µsec short circuit capable at VGS=15V  
• Low VCE(on) for 4 to 10kHz applications  
• IGBT Co-packaged with ultra-soft-recovery  
antiparallel diode  
VCES = 600V  
VCE(on) typ. = 1.85V  
@VGE = 15V, IC = 11A  
• Industry standard D2Pak package  
G
• Lead-Free  
Benefits  
E
• Offers highest efficiency and short circuit  
n-channel  
capability for intermediate applications  
• Provides best efficiency for the mid range frequency  
(4 to 10kHz)  
• Optimized for Appliance Motor Drives, Industrial (Short  
Circuit Proof) Drives and Intermediate Frequency  
Range Drives  
• High noise immune "Positive Only" gate drive-  
Negative bias gate drive not necessary  
• For Low EMI designs- requires little or no snubbing  
• Single Package switch for bridge circuit applications  
• Compatible with high voltage Gate Driver IC's  
• Allows simpler gate drive  
D2Pak  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
18  
Units  
V
VCES  
C @ TC = 25°C  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
Clamped Inductive Load Current ‚  
Diode Continuous Forward Current  
Short Circuit Withstand Time  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
I
IC @ TC = 100°C  
11  
ICM  
36  
A
ILM  
36  
IF @ TC = 100°C  
7.0  
10  
tsc  
µs  
A
IFM  
36  
VGE  
± 20  
60  
V
PD @ TC = 25°C  
Maximum Power Dissipation  
W
PD @ TC = 100°C Maximum Power Dissipation  
24  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw.  
°C  
300 (0.063 in. (1.6mm) from case)  
10 lbf•in (1.1 N•m)  
Thermal Resistance  
Parameter  
Min.  
------  
------  
------  
-----  
Typ.  
------  
------  
0.50  
Max.  
2.1  
Units  
RθJC  
RθJC  
RθCS  
RθJA  
Wt  
Junction-to-Case - IGBT  
Junction-to-Case - Diode  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Weight  
2.5  
°C/W  
------  
80  
-----  
------  
2 (0.07)  
------  
g (oz)  
www.irf.com  
1
07/15/04  
IRG4BC20MD-SPbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Collector-to-Emitter Breakdown Voltageƒ600 ---- ----  
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.67 ---- V/°C VGE = 0V, IC = 1.0mA  
Min. Typ. Max. Units  
Conditions  
V(BR)CES  
V
VGE = 0V, IC = 250µA  
VCE(on)  
Collector-to-Emitter Saturation Voltage ---- 1.85 2.1  
IC = 11A  
VGE = 15V  
---- 2.46 ----  
---- 2.07 ----  
V
IC = 18A  
See Fig. 2, 5  
IC = 11A, TJ = 150°C  
VCE = VGE, IC = 250µA  
VGE(th)  
Gate Threshold Voltage  
4.0 ---- 6.5  
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA  
gfe  
Forward Transconductance „  
3.0 3.6 ----  
---- ---- 250  
---- ---- 2500  
---- 1.4 1.7  
---- 1.3 1.6  
S
VCE = 100V, IC = 11A  
VGE = 0V, VCE = 600V  
ICES  
Zero Gate Voltage Collector Current  
µA  
VGE = 0V, VCE = 600V, TJ = 150°C  
VFM  
IGES  
Diode Forward Voltage Drop  
V
IC = 8.0A  
See Fig. 13  
IC = 8.0A, TJ = 150°C  
VGE = ±20V  
Gate-to-Emitter Leakage Current  
---- ---- ±100 nA  
Switching Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
Qg  
Total Gate Charge (turn-on)  
Gate - Emitter Charge (turn-on)  
Gate - Collector Charge (turn-on)  
Turn-On Delay Time  
Rise Time  
----  
39  
59  
IC = 11A  
nC VCC = 400V  
VGE = 15V  
Qge  
Qgc  
td(on)  
tr  
---- 5.3 8.0  
See Fig. 8  
----  
----  
----  
20  
21  
37  
30  
----  
----  
TJ = 25°C  
ns  
IC = 11A, VCC = 480V  
VGE = 15V, RG = 50Ω  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
---- 463 690  
---- 340 510  
---- 0.41 ----  
---- 2.03 ----  
---- 2.44 3.7  
Energy losses include "tail" and  
Eon  
Eoff  
Ets  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On Delay Time  
Rise Time  
diode reverse recovery.  
mJ See Fig. 9, 10, 11, 18  
td(on)  
tr  
td(off)  
tf  
----  
----  
19  
41  
----  
----  
TJ = 150°C, See Fig. 9, 10, 11, 18  
ns  
IC = 6.5A, VCC = 480V  
Turn-Off Delay Time  
Fall Time  
---- 590 ----  
---- 600 ----  
---- 3.49 ----  
---- 7.5 ----  
---- 460 ----  
VGE = 15V, RG = 50Ω  
Energy losses include "tail" and  
Ets  
Total Switching Loss  
Internal Emitter Inductance  
Input Capacitance  
mJ diode reverse recovery.  
nH Measured 5mm from package  
VGE = 0V  
LE  
Cies  
Coes  
Cres  
trr  
Output Capacitance  
Reverse Transfer Capacitance  
Diode Reverse Recovery Time  
----  
----  
----  
----  
54  
14  
37  
55  
----  
----  
55  
pF  
ns  
A
VCC = 30V  
See Fig. 7  
ƒ = 1.0MHz  
TJ = 25°C See Fig.  
90  
TJ = 125°C  
TJ = 25°C See Fig.  
TJ = 125°C 15  
nC TJ = 25°C See Fig.  
TJ = 125°C 16  
---- 240 ---- A/µs TJ = 25°C See Fig.  
---- 210 ---- TJ = 125°C 17  
14  
IF = 8.0A  
Irr  
Diode Peak Reverse Recovery Current ---- 3.5 5.0  
---- 4.5 8.0  
VR = 200V  
Qrr  
Diode Reverse Recovery Charge  
----  
65 138  
---- 124 360  
di/dt 200A/µs  
di(rec)M/dt  
Diode Peak Rate of Fall of Recovery  
During tb  
2
www.irf.com  
IRG4BC20MD-SPbF  
1.5  
1.0  
0.5  
0.0  
Duty cycle : 50%  
Tj = 125°C  
Tsink = 90°C  
Gate drive as specified  
Turn-on losses include effects of  
reverse recovery  
Power Dissipation = 13W  
0.1  
1
10  
100  
f , Frequency ( kHz )  
Fig. 1 - Typical Load Current vs. Frequency  
(Load Current = IRMS of fundamental)  
100  
100  
°
T = 150 C  
J
10  
1
10  
°
T = 25 C  
J
T
= 150°C  
J
1
T = 25°C  
J
V
= 15V  
GE  
20µs PULSE WIDTH  
0.1  
V
= 50V  
CC  
5µs PULSE WIDTH  
0.1  
1.0  
, Collector-to-Emitter Voltage (V)  
10.0  
0.1  
6
8
10  
12 14  
16  
V
CE  
V
, Gate-to-Emitter Voltage (V)  
GE  
Fig. 3 - Typical Transfer Characteristics  
Fig. 2 - Typical Output Characteristics  
www.irf.com  
3
IRG4BC20MD-SPbF  
20  
4.0  
3.0  
2.0  
1.0  
V
= 15V  
GE  
80µs PULSE WIDTH  
I
= 22A  
C
15  
10  
5
I
I
= 11A  
C
= 5.5A  
C
0
-60 -40 -20  
0
20 40 60 80 100 120 140  
25  
50  
75  
100  
125  
150  
°
T , Case Temperature ( C)  
T , Junction Temperature (°C)  
C
J
Fig. 5 - Typical Collector-to-Emitter Voltage  
Fig. 4 - Maximum Collector Current vs.  
vs. Junction Temperature  
Case Temperature  
10  
D = 0.50  
1
0.20  
0.10  
0.05  
P
DM  
0.1  
t
0.02  
1
0.01  
SINGLE PULSE  
(THERMAL RESPONSE)  
t
2
Notes:  
1. Duty factor D =t / t  
1
2
2. Peak T =P  
DM  
x Z  
+ T  
thJC C  
J
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case  
4
www.irf.com  
IRG4BC20MD-SPbF  
20  
800  
600  
400  
200  
0
V
= 0V,  
f = 1MHz  
C SHORTED  
ce  
V
CC  
I
C
= 400V  
= 11A  
GE  
C
= C + C  
ies  
ge  
gc ,  
C
= C  
res  
gc  
C
= C + C  
oes  
ce  
gc  
16  
12  
8
C
ies  
C
C
oes  
4
res  
0
1
10  
100  
0
10  
20  
30  
40  
V
, Collector-to-Emitter Voltage (V)  
Q , Total Gate Charge (nC)  
CE  
G
Fig. 7 - Typical Capacitance vs.  
Fig. 8 - Typical Gate Charge vs.  
Collector-to-Emitter Voltage  
Gate-to-Emitter Voltage  
2.5  
2.4  
2.3  
100  
V
V
= 480V  
= 15V  
Ω
= 15V  
CC  
GE  
R
= 50  
G
V
V
GE  
CC  
T = 25°C  
= 480V  
J
I
= 11A  
C
I
= 22A  
C
10  
I
= 11A  
C
I
= 5.5A  
C
1
0.1  
0
10  
20  
30  
40  
50  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
R , Gate Resistance ( )  
Ω
T , Junction Temperature (°C)  
G
J
Fig. 9 - Typical Switching Losses vs. Gate  
Fig. 10 - Typical Switching Losses vs.  
Resistance  
Junction Temperature  
www.irf.com  
5
IRG4BC20MD-SPbF  
100  
10  
1
10.0  
V
T
= 20V  
GE  
= 125°  
R
= 50Ω  
G
J
TJ = 150°C  
V
= 15V  
GE  
CC  
8.0  
6.0  
4.0  
2.0  
0.0  
V
= 480V  
SAFE OPERATING AREA  
5
10  
15  
20  
25  
1
10  
100  
1000  
I
, Collector Current (A)  
C
V
DS  
, Drain-to-Source Voltage (V)  
Fig. 11 - Typical Switching Losses vs.  
Fig. 12 - Turn-Off SOA  
Collector-to-Emitter Current  
100  
10  
1
T = 150°C  
J
T = 125°C  
J
T = 25°C  
J
0.1  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
Forward Voltage Drop - V  
(V)  
FM  
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current  
6
www.irf.com  
IRG4BC20MD-SPbF  
100  
100  
80  
60  
40  
20  
0
VR = 200V  
TJ = 125°C  
TJ = 25°C  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
I
= 16A  
I
F
= 8.0A  
F
I
= 16A  
F
10  
I
= 8.0A  
F
I
= 4.0A  
F
I
= 4.0A  
F
1
100  
100  
1000  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 15 - Typical Recovery Current vs. dif/dt  
Fig. 14 - Typical Reverse Recovery vs. dif/dt  
500  
10000  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
400  
300  
I
= 4.0A  
= 8.0A  
F
I
= 16A  
F
1000  
I
F
200  
100  
0
I
= 16A  
F
I
= 8.0A  
F
I
= 4.0A  
F
100  
100  
100  
1000  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 16 - Typical Stored Charge vs. dif/dt  
Fig. 17 - Typical di(rec)M/dt vs. dif/dt  
www.irf.com  
7
IRG4BC20MD-SPbF  
90% Vge  
+Vge  
Same type  
device as  
D.U.T.  
Vce  
90% Ic  
10% Vce  
Ic  
Ic  
5% Ic  
430µF  
80%  
of Vce  
D.U.T.  
td(off)  
tf  
t1+5µS  
Eoff = Vce ic dt  
∫
t1  
Fig. 18a - Test Circuit for Measurement of  
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf  
I
t1  
t2  
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining  
Eoff, td(off), tf  
trr  
id dt  
trr  
GATE VOLTAGE D.U.T.  
Qrr =  
Ic  
∫
tx  
10% +Vg  
+Vg  
tx  
10% Irr  
10% Vcc  
Vcc  
DUT VOLTAGE  
AND CURRENT  
Vce  
Vpk  
Irr  
10% Ic  
Vcc  
Ipk  
90% Ic  
Ic  
DIODE RECOVERY  
WAVEFORMS  
5% Vce  
tr  
td(on)  
t2  
Vce ie dt  
Eon =  
t4  
∫
Erec = Vd id dt  
t1  
∫
t3  
DIODE REVERSE  
RECOVERY ENERGY  
t1  
t2  
t3  
t4  
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,  
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,  
Defining Erec, trr, Qrr, Irr  
Defining Eon, td(on), tr  
8
www.irf.com  
IRG4BC20MD-SPbF  
Vg  
GATE SIGNAL  
DEVICE UNDER TEST  
CURRENT D.U.T.  
VOLTAGE IN D.U.T.  
CURRENT IN D1  
t0  
t1  
t2  
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit  
480V  
4 X IC @25°C  
D.U.T.  
L
RL=  
1000V  
V *  
c
0 - 480V  
50V  
6000µF  
100V  
Figure 20. Pulsed Collector Current  
Test Circuit  
Figure 19. Clamped Inductive Load Test  
Circuit  
www.irf.com  
9
IRG4BC20MD-SPbF  
D2Pak Package Outline  
Dimensions are shown in millimeters (inches)  
D2Pak Part Marking Information  
THIS IS AN IRF530S WITH  
LOT CODE 8024  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
AS S EMBLED ON WW 02, 2000  
IN THE ASSEMBLYLINE "L"  
F530S  
DAT E CODE  
YEAR 0 = 2000  
WEEK 02  
Note: "P" in assembly line  
pos ition indicates "Lead-F ree"  
ASSEMBLY  
LOT CODE  
LINE L  
OR  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
F530S  
DAT E CODE  
P = DE S IGNAT E S L E AD-F R E E  
PRODUCT (OPTIONAL)  
YEAR 0 = 2000  
AS S E MB L Y  
LOT CODE  
WE EK 02  
A = AS S E MB L Y S IT E CODE  
10  
www.irf.com  
IRG4BC20MD-SPbF  
Notes:  
Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-  
perature (figure 20)  
‚VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19)  
ƒPulse width ≤ 80µs; duty factor ≤ 0.1%.  
„Pulse width 5.0µs, single shot.  
D2Pak Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
TRR  
1.60 (.063)  
1.50 (.059)  
1.60 (.063)  
4.10 (.161)  
1.50 (.059)  
0.368 (.0145)  
0.342 (.0135)  
3.90 (.153)  
FEED DIRECTION  
TRL  
11.60 (.457)  
11.40 (.449)  
1.85 (.073)  
1.65 (.065)  
24.30 (.957)  
23.90 (.941)  
15.42 (.609)  
15.22 (.601)  
1.75 (.069)  
1.25 (.049)  
10.90 (.429)  
10.70 (.421)  
4.72 (.136)  
4.52 (.178)  
16.10 (.634)  
15.90 (.626)  
FEED DIRECTION  
13.50 (.532)  
12.80 (.504)  
27.40 (1.079)  
23.90 (.941)  
4
330.00  
(14.173)  
MAX.  
60.00 (2.362)  
MIN.  
30.40 (1.197)  
MAX.  
NOTES :  
1. COMFORMS TO EIA-418.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION MEASURED @ HUB.  
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.  
26.40 (1.039)  
24.40 (.961)  
4
3
Data and specifications subject to change without notice.  
This product has been designed and qualified for the industrial market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 07/04  
www.irf.com  
11  
Note: For the most current drawings please refer to the IR website at:  
http://www.irf.com/package/  

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