IRG4PC30F [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A); 绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.59V ， @ VGE = 15V ， IC = 17A）
| 型号： | IRG4PC30F |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) |
| 文件： | 总8页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 91459B
IRG4PC30F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
VCES =600V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
V
CE(on) typ. = 1.59V
G
@VGE = 15V, IC = 17A
E
• Industry standard TO-247AC package
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
31
IC @ TC = 100°C
17
120
A
ICM
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
120
VGE
± 20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
10
mJ
PD @ TC = 25°C
100
W
PD @ TC = 100°C Maximum Power Dissipation
42
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.2
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.24
–––
40
–––
6 (0.21)
–––
g (oz)
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1
1229//00
IRG4PC30F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
6.1
—
—
—
—
0.69
V/°C VGE = 0V, IC = 1.0mA
1.59 1.8
IC = 17A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
1.99
1.7
—
—
—
IC = 31A
V
See Fig.2, 5
IC = 17A , TJ = 150°C
6.0
—
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
10
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 100V, IC = 17A
250
2.0
1000
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
—
IGES
Gate-to-Emitter Leakage Current
—
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 17A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
51
7.9
19
21
15
77
12
28
—
—
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
See Fig. 8
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
200 300
180 270
IC = 17A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail"
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.23
1.18
—
—
mJ See Fig. 10, 11, 13, 14
1.41 2.0
20
16
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 17A, VCC = 480V
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
290
350
2.5
13
VGE = 15V, RG = 23Ω
Energy losses include "tail"
mJ See Fig. 13, 14
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
nH
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
1100
74
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
14
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC30F
50
40
30
20
10
0
For both:
Triangular wave:
D uty cycle: 5 0%
T
T
=
125 °C
90 °C
J
=
sink
G a te drive as spe cifie d
C lam p v oltage :
80% o f rated
P ow er D issipation 24W
=
S quare wave:
60% of rated
voltage
Id e a l d io d e s
A
0.1
1
10
100
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
1000
1000
100
10
TJ = 25°C
100
T
J
= 150°C
TJ = 150°C
TJ = 25°C
10
V C C = 50V
5µs PULSE WIDTH
V G E = 15V
20µs PULSE WIDTH
A
A
1
1
5
6
7
8
9
10
11
12
13
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
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Fig. 3 - Typical Transfer Characteristics
3
IRG4PC30F
40
30
20
10
0
2.5
2.0
1.5
1.0
V
= 15V
G E
VG E = 15V
80µs PULSE WIDTH
IC = 34A
IC = 17A
IC = 8.5A
A
25
50
75
100
125
150
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
, Case Temperature (°C)
C
T
, Junction Temperature (°C)
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
1
D
=
0 .50
0.2 0
0.1 0
0.0 5
P
D M
0.1
t
1
0.02
0.01
t
2
S IN G LE P U L S E
(T H E R M A L R E S P O N S E )
N otes:
1 . D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.00 1
0.01
0.1
10
t
, Rectangular Pulse D uration (sec)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4PC30F
20
16
12
8
2000
1600
1200
800
400
0
VC E = 400V
IC = 17A
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
Cres = Cce
SHORTED
Coes = Cce + Cgc
C
ies
C
C
oes
4
res
A
60
A
0
1
10
100
0
10
20
30
40
50
Q
, Total Gate Charge (nC)
g
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
1.50
1.45
1.40
1.35
1.30
10
VC C = 480V
VG E = 15V
RG = 23
V G E = 15V
VC C = 480V
Ω
TJ
= 25°C
IC = 17A
I C = 34A
I C = 17A
IC = 8.5A
1
A
A
100 120 140 160
0.1
0
10
20
30
40
50
60
-60
-40
-20
0
20
40
60
80
T
, Junction Temperature (°C)
R
, Gate Resistance (
)
Ω
J
G
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
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5
IRG4PC30F
6.0
1000
100
10
RG = 23
V
T
= 20V
G E
Ω
T J
= 150°C
= 125°C
J
V C C = 480V
V G E = 15V
5.0
4.0
3.0
2.0
1.0
0.0
SA FE O PERATING AREA
A
1
0
10
20
30
40
1
10
100
1000
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-Emitter Current (A)
C
C E
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4PC30F
L
D.U.T.
480V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
D river*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(o ff)
Waveforms
10%
5%
I
C
t
f
t
r
t
d (o n)
t=5µs
E
E
o ff
o n
E
= (E
+E
)
off
ts
o n
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7
IRG4PC30F
Case Outline and Dimensions TO-247AC
N O TE S :
-
D -
3.65 (.1 43 )
1
D IM E N S IO N S & T O LE R A N C IN G
5 .30 ( .20 9)
4 .70 ( .18 5)
15 .90 (.6 26)
3.55 (.1 40 )
P E R A N S I Y 14.5M , 1982.
C O N TR O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E TE R S (IN C H E S ).
C O N FO R M S TO JE D E C O U TLIN E
T O -247AC .
15 .30 (.6 02)
M
0.25 (.01 0)
M
D
B
2
3
2.50 (.089)
1.50 (.059)
4
-
B -
-
A -
5.5 0 (.2 17)
4
20 .30 (.8 00)
19 .70 (.7 75)
5.5 0 (.2 17)
4.5 0 (.1 77)
2X
LE A D A S S IG N M E N T S
1
2
3
4
- G A T E
- C O LLE C TO R
- EM IT TE R
- C O LLE C TO R
1
2
3
-
C -
14 .80 (.583 )
14 .20 (.559 )
4.30 (.1 70)
3.70 (.1 45)
LO N G E R LE A D ED (20m m )
V E R S IO N A V A ILA B LE (TO -247A D )
T O O R D E R A D D "-E " S U FF IX
T O P A R T N U M B ER
*
*
2.40 ( .094)
2.00 ( .079)
2 X
0.80 (.03 1)
0.40 (.01 6)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3X
3 X
2 .60 ( .10 2)
2 .20 ( .08 7)
M
S
A
C
5.45 (.2 15 )
3.40 (.1 3 3)
3.00 (.1 1 8)
2 X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n sion s in M illim e te rs a n d (In ch es )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
8
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