IRG4PC40U [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A); 绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ） typ.1.72V ， @ VGE = 15V ， IC = 20A ）
| 型号： | IRG4PC40U |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A) |
| 文件： | 总8页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 91466E
IRG4PC40U
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
VCES =600V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
V
CE(on) typ. = 1.72V
G
@VGE = 15V, IC = 20A
E
• Industry standard TO-247AC package
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
40
20
IC @ TC = 100°C
A
ICM
160
ILM
160
VGE
±20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
15
mJ
PD @ TC = 25°C
160
W
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
------
------
------
------
Typ.
------
Max.
0.77
------
40
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
0.24
------
6 (0.21)
------
g (oz)
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1
12/30/00
IRG4PC40U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage 600 ---- ----
Emitter-to-Collector Breakdown Voltage 18 ---- ----
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
V
V
See Fig. 2, 5
VGE = 15V
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 1.72 2.1
---- 2.15 ----
---- 1.7 ----
3.0 ---- 6.0
IC = 20A
IC = 40A
V
I
C = 20A, TJ = 150°C
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
11
18
----
S
VCE = 100V, IC = 20A
VGE = 0V, VCE = 600V
---- ---- 250
---- ---- 2.0
---- ---- 2500
ICES
IGES
µA
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
---- ---- ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
Min. Typ. Max. Units
Conditions
Qg
Qge
Qgc
td(on)
tr
---- 100 150
IC = 20A
----
----
----
----
16
40
34
19
25
60
nC VCC = 400V
VGE = 15V
See Fig. 8
----
----
TJ = 25°C
ns
IC = 20A, VCC = 480V
VGE = 15V, RG = 10Ω
td(off)
tf
Turn-Off Delay Time
FallTime
---- 110 175
---- 120 180
---- 0.32 ----
---- 0.35 ----
---- 0.67 1.0
Energy losses include "tail"
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
mJ
ns
mJ
See Fig. 10, 11, 13, 14
----
----
30
19
----
----
TJ = 150°C,
IC = 20A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
See Fig. 13, 14
td(off)
tf
Turn-Off Delay Time
FallTime
---- 220 ----
---- 160 ----
---- 1.4 ----
E
ts
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
LE
----
13
----
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
---- 2100 ----
---- 140 ----
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
----
34
----
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width 5.0µs, single shot.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC40U
80
60
40
20
0
For both:
Tria ngular w ave :
D uty cy cle: 50 %
T
T
=
1 25°C
J
=
90 °C
sink
G ate drive a s sp ecified
P ow e r D issipation = 40W
C la m p voltage:
80% of rate d
S q u a re w a v e:
60% of ra ted
voltag e
Idea l d iod es
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
1000
1000
100
10
100
TJ = 25°C
TJ = 1 5 0°C
TJ = 150°C
TJ = 2 5 °C
10
V C C = 1 0 V
5µ s P U L S E W ID TH
VG E = 15V
20µs PULSE WIDTH
A
1
A
1
4
6
8
10
12
0.1
1
10
V
, G ate-to-Em itter Vo ltag e (V)
G E
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4PC40U
2.5
2.0
1.5
1.0
40
30
20
10
0
VG E = 15V
80µs PULSE WIDTH
V G E = 15V
IC = 40A
I
C
= 20A
= 10A
I
C
A
A
25
50
75
100
125
150
-60
-40
-20
0
20
40
60
80
100 120 140 160
T
, Case Temperature (°C)
T
, Junction Temperature (°C)
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Temperature
JunctionTemperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
0.02
0.01
N otes:
1 . D uty factor D
=
t
/ t
2
1
Z
2. Pea k T
0.1
=
P
x
+ T
C
DM
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4PC40U
20
16
12
8
4000
3000
2000
1000
0
VC E = 4 0 0V
I C = 20 A
V
C
C
C
= 0V,
f = 1M Hz
G E
ies
= C
= C
= C
+ C
+ C
,
C
S HO RTED
ge
gc
ce
gc
ce
res
oes
gc
C
ies
C
C
oes
res
4
A
0
A
0
20
40
60
80
100
120
1
10
100
Q
, To tal G ate C harge (n C )
g
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
1.1
1.0
0.9
0.8
0.7
0.6
10
VC C = 480V
VG E = 15V
RG = 10
Ω
V G E = 15V
VC C = 480V
TJ
= 25°C
IC = 20A
I C = 40A
I C = 20A
IC = 10A
1
A
A
0.1
0
10
20
30
40
50
60
-60
-40
-20
0
20
40
60
80
100 120 140 160
R
, Gate Resistance (
)
Ω
T
, Junction Temperature (°C)
G
J
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
JunctionTemperature
Resistance
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5
IRG4PC40U
4.0
1000
100
10
RG = 10
Ω
V
T
= 20V
= 125°C
G
E
T J = 150°C
VC C = 480V
V G E = 15V
J
3.0
2.0
1.0
0.0
S AFE O PERATING A REA
A
1
1
10
100
1000
0
10
20
30
40
50
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-Emitter Current (A)
C E
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4PC40U
L
D.U.T.
480V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
D river*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(o ff)
Waveforms
10%
5%
I
C
t
f
t
r
t
d (o n)
t=5µs
E
E
o ff
o n
E
= (E
+E
)
off
ts
o n
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7
IRG4PC40U
Case Outline and Dimensions TO-247AC
N O TE S :
-
D -
3.65 (.1 43 )
1
D IM E N S IO N S & T O LE R A N C IN G
5 .30 ( .20 9)
4 .70 ( .18 5)
15 .90 (.6 26)
3.55 (.1 40 )
P E R A N S I Y 14.5M , 1982.
C O N TR O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E TE R S (IN C H E S ).
C O N FO R M S TO JE D E C O U TLIN E
T O -247AC .
15 .30 (.6 02)
M
0.25 (.01 0)
M
D
B
2
3
2.50 (.089)
1.50 (.059)
4
-
B -
-
A -
5.5 0 (.2 17)
4
20 .30 (.8 00)
19 .70 (.7 75)
5.5 0 (.2 17)
4.5 0 (.1 77)
2X
LE A D A S S IG N M E N T S
1
2
3
4
- G A T E
- C O LLE C TO R
- EM IT TE R
- C O LLE C TO R
1
2
3
-
C -
14 .80 (.583 )
14 .20 (.559 )
4.30 (.1 70)
3.70 (.1 45)
LO N G E R LE A D ED (20m m )
V E R S IO N A V A ILA B LE (TO -247A D )
T O O R D E R A D D "-E " S U FF IX
T O P A R T N U M B ER
*
*
2.40 ( .094)
2.00 ( .079)
2 X
0.80 (.03 1)
0.40 (.01 6)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3X
3 X
2 .60 ( .10 2)
2 .20 ( .08 7)
M
S
A
C
5.45 (.2 15 )
3.40 (.1 3 3)
3.00 (.1 1 8)
2 X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n sion s in M illim e te rs a n d (In ch es )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
8
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