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IRG4PC50S-P [INFINEON]

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT; 绝缘栅双极晶体管标准速度IGBT
IRG4PC50S-P
型号： IRG4PC50S-P
厂家： Infineon    Infineon
描述：

INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT
绝缘栅双极晶体管标准速度IGBT

晶体 晶体管 双极性晶体管 栅
文件： 总9页 (文件大小：147K)
中文：  中文翻译
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PD - 91581B  
IRG4PC50S-P  
Standard Speed IGBT  
INSULATED GATE BIPOLAR TRANSISTOR  
C
Features  
• Standard: Optimized for minimum saturation  
voltage and low operating frequencies ( < 1kHz)  
• Generation 4 IGBT design provides tighter  
VCES = 600V  
parameter distribution and higher efficiency than  
Generation 3  
VCE(on) typ. = 1.28V  
G
• Industry standard TO-247AC package  
• Surface Mountable  
@VGE = 15V, IC = 41A  
E
n-channel  
Benefits  
• Generation 4 IGBT's offer highest efficiency available  
• IGBT's optimized for specified application conditions  
• Designed to be a "drop-in" replacement for equivalent  
industry-standard Generation 3 IR IGBT's  
Surface Mountable  
TO-247  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
70  
Units  
V
VCES  
Collector-to-Emitter Breakdown Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
Clamped Inductive Load Current ‚  
Gate-to-Emitter Voltage  
IC @ TC = 25°C  
IC @ TC = 100°C  
41  
A
ICM  
140  
140  
± 20  
20  
ILM  
VGE  
V
EARV  
Reverse Voltage Avalanche Energy ƒ  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
mJ  
PD @ TC = 25°C  
200  
78  
W
PD @ TC = 100°C  
TJ  
-55 to + 150  
TSTG  
Storage Temperature Range  
Max Reflow Temperature  
°C  
225  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
Max.  
0.64  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
Case-to-Sink, Flat, Greased Surface  
0.24  
–––  
°C/W  
Junction-to-Ambient, typical socket mount  
1
www.irf.com  
05/14/02  
IRG4PC50S-P  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
VGE = 0V, IC = 250µA  
VGE = 0V, IC = 1.0A  
V(BR)CES  
V(BR)ECS  
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
600  
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage „ 18  
—
—
—
—
3.0  
—
17  
—
—
—
—
0.75  
V/°C VGE = 0V, IC = 1.0mA  
IC = 41A  
1.28 1.36  
VGE = 15V  
VCE(ON)  
VGE(th)  
Collector-to-Emitter Saturation Voltage  
Gate Threshold Voltage  
1.62  
1.28  
—
—
—
IC = 80A  
V
See Fig.2, 5  
IC = 41A , TJ = 150°C  
VCE = VGE, IC = 250µA  
6.0  
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage  
-9.3  
34  
mV/°C VCE = VGE, IC = 250µA  
gfe  
Forward Transconductance ꢀ  
—
S
VCE = 100V, IC = 41A  
—
250  
2.0  
1000  
±100  
VGE = 0V, VCE = 600V  
ICES  
Zero Gate Voltage Collector Current  
µA  
—
VGE = 0V, VCE = 10V, TJ = 25°C  
VGE = 0V, VCE = 600V, TJ = 150°C  
—
IGES  
Gate-to-Emitter Leakage Current  
—
nA VGE = ±20V  
Switching Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
180 280  
Conditions  
IC = 41A  
Qg  
Total Gate Charge (turn-on)  
Gate - Emitter Charge (turn-on)  
Gate - Collector Charge (turn-on)  
Turn-On Delay Time  
Rise Time  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Qge  
Qgc  
td(on)  
tr  
24  
61  
33  
30  
37  
92  
—
—
nC  
VCC = 400V  
VGE = 15V  
See Fig. 8  
TJ = 25°C  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
650 980  
400 600  
IC = 41A, VCC = 480V  
VGE = 15V, RG = 5.0Ω  
Energy losses include "tail"  
Eon  
Eoff  
Ets  
td(on)  
tr  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On Delay Time  
Rise Time  
0.72  
8.27  
—
—
mJ See Fig. 9, 10, 14  
8.99 13  
31  
31  
—
—
—
—
—
—
—
—
—
TJ = 150°C,  
IC = 41A, VCC = 480V  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
1080  
620  
15  
VGE = 15V, RG = 5.0Ω  
Energy losses include "tail"  
mJ See Fig. 11, 14  
Ets  
LE  
Total Switching Loss  
Internal Emitter Inductance  
Input Capacitance  
13  
nH  
Measured 5mm from package  
VGE = 0V  
Cies  
Coes  
Cres  
4100  
250  
48  
Output Capacitance  
Reverse Transfer Capacitance  
pF  
VCC = 30V  
See Fig. 7  
ƒ = 1.0MHz  
Notes:  

‚
ƒ
Repetitive rating; VGE = 20V, pulse width limited by  
max. junction temperature. ( See fig. 13b )  
„
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.  
Pulse width 5.0µs, single shot.  
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,  
(See fig. 13a)  
Repetitive rating; pulse width limited by maximum  
junction temperature.  
2
www.irf.com  
IRG4PC50S-P  
100  
80  
60  
40  
20  
0
F or both:  
Trian gu la r wa v e:  
D uty cycle: 50%  
T J = 125°C  
I
T
= 90°C  
sink  
Ga te drive as specified  
Po w e r D iss ipa tion 4 0 W  
=
C lam p vo ltage :  
80% of rated  
S qu are wave:  
60 % of ra ted  
volt age  
I
Ideal diodes  
A
0.1  
1
10  
100  
f, Frequency (kHz)  
Fig. 1 - Typical Load Current vs. Frequency  
(Load Current = IRMS of fundamental)  
1000  
100  
1000  
100  
10  
T = 150oC  
J
10  
T = 25 oC  
J
T = 150oC  
J
T = 25oC  
J
V
= 15V  
V
= 50V  
GE  
20µs PULSE WIDTH  
CC  
5µs PULSE WIDTH  
1
0.1  
1
1
10  
5
6
7
8
9
10  
V
, Collector-to-Emitter Voltage (V)  
V
, Gate-to-Emitter Voltage (V)  
CE  
GE  
Fig. 2 - Typical Output Characteristics  
Fig. 3 - Typical Transfer Characteristics  
www.irf.com  
3
IRG4PC50S-P  
80  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
LIM ITED BY P A CKAG E  
V
= 15V  
G E  
V
= 15V  
GE  
80 us PULSE WIDTH  
I
= 82A  
C
60  
40  
20  
0
I
I
= 41A  
=20.5A  
C
C
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
25  
50  
75  
100  
125  
150  
°
, Junction Temperature ( C)  
T
TC , Case Temperature (°C)  
J
Fig. 4 - Maximum Collector Current vs. Case  
Fig. 5 - Typical Collector-to-Emitter Voltage  
Temperature  
vs.JunctionTemperature  
1
0.50  
0.20  
0.1  
0.10  
0.05  
0.02  
0.01  
SINGLE PULSE  
(THERMAL RESPONSE)  
P
DM  
0.01  
t
1
t
2
Notes:  
1. Duty factor D =  
t / t  
1 2  
2. Peak T =P  
DM  
x Z  
+ T  
C
J
thJC  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case  
4
www.irf.com  
IRG4PC50S-P  
8000  
6000  
4000  
2000  
0
20  
16  
12  
8
V
= 0V,  
f = 1MHz  
C
GE  
V
CC  
I
C
= 400V  
= 41A  
C
= C + C  
SHORTED  
ce  
ies  
ge  
gc ,  
gc  
C
= C  
gc  
res  
C
= C + C  
oes  
ce  
C
ies  
C
oes  
4
C
res  
0
1
10  
100  
0
40  
Q
80  
120  
160  
200  
V
, Collector-to-Emitter Voltage (V)  
, Total Gate Charge (nC)  
CE  
G
Fig. 7 - Typical Capacitance vs.  
Fig. 8 - Typical Gate Charge vs.  
Collector-to-Emitter Voltage  
Gate-to-Emitter Voltage  
100  
10  
1
10.0  
9.5  
9.0  
8.5  
5.0Ω  
= 15V  
= 480V  
R
= Ohm  
V
V
= 480V  
G
CC  
GE  
V
= 15V  
GE  
°
V
CC  
T
I
= 25 C  
J
C
= 41A  
I
I
I
=
=
82A  
C
C
C
A
41  
=20.5A  
0
10  
20  
30  
40  
50  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
R
, Gate Resistance ( Ω )  
G
°
T , Junction Temperature ( C )  
J
Fig. 9 - Typical Switching Losses vs. Gate  
Fig. 10 - Typical Switching Losses vs.  
Resistance  
Junction Temperature  
www.irf.com  
5
IRG4PC50S-P  
1000  
100  
10  
40  
5.0Ω  
V
T
= 20V  
R
T
= O
G
J
GE  
J
°
= 125 oC  
= 150 C  
V
= 480V  
= 15V  
CC  
V
GE  
30  
20  
10  
0
SAFE OPERATING AREA  
10  
1
1
100  
1000  
0
20  
40  
60  
80  
100  
V
, Collector-to-Emitter Voltage (V)  
I
, Collector-to-emitter Current (A)  
CE  
C
Fig. 11 - Typical Switching Losses vs.  
Fig. 12 - Turn-Off SOA  
Collector-to-Emitter Current  
6
www.irf.com  
IRG4PC50S-P  
L
D.U.T.  
480V  
RL =  
V
*
C
4 X IC@25°C  
50V  
0 - 480V  
1000V  
480µF  
960V  

‚
* Driver same type as D.U.T.; Vc = 80% of Vce(max)  
* Note: Due to the 50V pow er supply, pulse width and inductor  
w ill increase to obtain rated Id.  
Fig. 13a - Clamped Inductive  
Fig. 13b - Pulsed Collector  
Load Test Circuit  
Current Test Circuit  
I
C
L
Fig. 14a - Switching Loss  
D.U.T.  
Driver*  
V
C
Test Circuit  
50V  
1000V  
* Driver same type  

as D.U.T., VC = 480V  
‚
ƒ

‚
90%  
10%  
ƒ
V
C
90%  
Fig. 14b - Switching Loss  
t
d (off)  
Waveforms  
10%  
5%  
I
C
t
f
t
r
t
d(o n )  
t=5µs  
E
E
o ff  
o n  
E
= (E  
+E  
)
o ff  
ts  
o n  
www.irf.com  
7
IRG4PC50S-P  
TO-247AC Package Outline  
Dimensions are shown in millimeters (inches)  
-
D -  
3.65 (.143)  
3.55 (.140)  
5.30 (.209)  
4.70 (.185)  
15.90 (.626)  
15.30 (.602)  
0.25 (.010)  
D
B
M
M
2.50 (.089)  
1.50 (.059)  
- B  
-
- A  
-
5.50 (.217)  
4
20.30 (.800)  
19.70 (.775)  
NOTES:  
5.50 (.217)  
4.50 (.177)  
2X  
1
DIMENSIONING & TOLERANCING  
PER ANSI Y14.5M, 1982.  
CONTROLLING DIMENSION : INCH.  
CONFORMS TO JEDEC OUTLINE  
TO-247-AC.  
1
2
3
2
3
- C  
-
14.80 (.583)  
14.20 (.559)  
4.30 (.170)  
3.70 (.145)  
LEAD ASSIGNMENTS  
2.40 (.094)  
2.00 (.079)  
0.80 (.031)  
0.40 (.016)  
1.40 (.056)  
1.00 (.039)  
3X  
3X  
1 - GATE  
2 - DRAIN  
3 - SOURCE  
4 - DRAIN  
2X  
2.60 (.102)  
2.20 (.087)  
0.25 (.010)  
C
A
S
M
5.45 (.215)  
3.40 (.133)  
3.00 (.118)  
2X  
TO-247AC Part Marking Information  
E X A M P L E  
:
TH IS IS A N IR F P E 3 0  
W ITH A S S E M B L Y  
L O T C O D E 3 A 1 Q  
A
PA R T N U M B E R  
IN TER N A TIO N A L  
R E C TIFIE R  
L O G O  
IR FP E 30  
3 A 1 Q 9 3 0 2  
D A TE C O D E  
(YY W W )  
A S SE M B L Y  
L O T  
C O D E  
Y Y  
= YE A R  
W W W E E K  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Industrial market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.05/02  
8
www.irf.com  
Note: For the most current drawings please refer to the IR website at:  
http://www.irf.com/package/  

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