IRG4PC50U [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A); 绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.65V ， @ VGE = 15V ， IC = 27A ）
| 型号： | IRG4PC50U |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) |
| 文件： | 总8页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 91470F
IRG4PC50U
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
VCES =600V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
V
CE(on) typ. = 1.65V
G
@VGE = 15V, IC = 27A
E
• Industry standard TO-247AC package
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
55
IC @ TC = 100°C
27
220
A
ICM
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
220
VGE
± 20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
20
mJ
PD @ TC = 25°C
200
W
PD @ TC = 100°C
Maximum Power Dissipation
78
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
----
Max.
0.64
----
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.24
----
40
6 (0.21)
----
g (oz)
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1
12/30/00
IRG4PC50U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
600 ---- ----
---- ----
V
V
Emitter-to-Collector Breakdown Voltage 18
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°C VGE = 0V, IC = 1.0mA
---- 1.65 2.0
---- 2.0 ----
---- 1.6 ----
3.0 ---- 6.0
IC = 27A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
IC = 55A
See Fig.2, 5
V
IC = 27A , TJ = 150°C
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
16
24
----
S
V
CE ≥ 15V, IC = 27A
VGE = 0V, VCE = 600V
GE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
---- ---- 250
---- ---- 2.0
---- ---- 5000
ICES
Zero Gate Voltage Collector Current
µA
V
IGES
Gate-to-Emitter Leakage Current
---- ---- ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 27A
Qg
Qge
Qgc
td(on)
tr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
---- 180 270
---- 25
---- 61
---- 32
---- 20
38
90
nC
ns
VCC = 400V
VGE = 15V
See Fig. 8
----
----
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
FallTime
---- 170 260
---- 88 130
---- 0.12 ----
---- 0.54 ----
---- 0.66 0.9
IC = 27A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 10, 11, 13, 14
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
mJ
ns
E
ts
td(on)
tr
td(off)
tf
---- 31
---- 23
----
----
TJ = 150°C,
IC = 27A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 13, 14
Turn-Off Delay Time
FallTime
---- 230 ----
---- 120 ----
---- 1.6 ----
E
ts
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
---- 13
----
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
---- 4000 ----
---- 250 ----
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
---- 52
----
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC50U
80
60
40
20
0
For bo th:
Triangular wave:
Duty cycle: 50%
T
T
=
125°C
90°C
J
=
sink
G ate drive as specified
Pow er D issip atio n = 40W
C lam p voltage:
80% of rated
Square w ave:
60% of rated
voltage
Ideal diodes
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
1000
100
10
1000
100
TJ = 150°C
TJ = 1 5 0 °C
TJ = 25°C
TJ = 2 5 °C
10
1
VG E = 1 5 V
2 0 µ s P UL S E W ID TH
VCC = 10V
5µs PULSE W IDTH
A
A
0.1
1
0
1
10
4
6
8
10
12
V
, Collector-to-Em itter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
C E
GE
Fig. 2 - Typical Output Characteristics
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Fig. 3 - Typical Transfer Characteristics
3
IRG4PC50U
60
50
40
30
20
10
0
2.5
2.0
1.5
1.0
V
= 15V
G E
VGE = 15V
80µs PULSE W IDTH
IC = 54A
IC = 27A
IC = 14A
A
25
50
75
100
125
150
-60
-40
-20
0
20
40
60
80
100 120 140 160
TC , Case Temperature (°C)
T
, Junction Tem perature (°C)
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Temperature
JunctionTemperature
1
D
=
0.5 0
0.2 0
0.1
0.1 0
0 .0 5
P
D M
t
1
S IN G L E P U LS E
t
2
(T H E R M A L R E S P O N S E )
0.02
0.01
N otes:
1 . D uty factor D
=
t
/ t
2
1
2. P eak
T
=
P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t
, Rectangular P ulse Duration (sec)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4PC50U
20
16
12
8
8000
6000
4000
2000
0
V G E = 0V ,
f = 1M Hz
VC E = 400V
IC = 27A
C ies = C g e + C
,
C
SH ORTED
g c
ce
C res = C
gc
C o es = C c e + C
g c
C
ie s
C
C
oes
res
4
A
A
0
0
40
80
120
160
200
1
10
100
Q
, Total Gate Charge (nC)
V
, Collector-to-Em itter Voltage (V)
g
C E
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
10
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
R G = 5 .0
V G E = 1 5V
V C C = 4 80 V
VC C = 480V
VG E = 15V
Ω
TJ
= 25°C
IC = 5 4A
IC = 27A
IC = 2 7A
IC = 1 4 A
1
A
A
0.1
-60
-40
-20
0
20
40
60
80
100 120 140 160
0
10
20
30
40
50
60
T
, Junction Tem perature (°C)
R
, Gate Resistance (
)
Ω
J
G
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
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5
IRG4PC50U
3.0
1000
100
10
R G = 5.0
Ω
V
T
= 20V
= 125°C
G
E
T J = 150°C
V CC = 480V
V GE = 15V
J
2.0
1.0
0.0
SA FE O PERATING AREA
A
1
0
10
20
30
40
50
1
10
100
1000
V
, Collector-to-Emitter Voltage (V)
C E
I
, Collector-to-Emitter Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4PC50U
L
D.U.T.
480V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
D river*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(o ff)
Waveforms
10%
5%
I
C
t
f
t
r
t
d (o n)
t=5µs
E
E
o ff
o n
E
= (E
+E
)
off
ts
o n
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7
IRG4PC50U
Case Outline and Dimensions TO-247AC
N O TE S :
-
D -
3.65 (.1 43 )
1
D IM E N S IO N S & T O LE R A N C IN G
5 .30 ( .20 9)
4 .70 ( .18 5)
15 .90 (.6 26)
3.55 (.1 40 )
P E R A N S I Y 14.5M , 1982.
C O N TR O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E TE R S (IN C H E S ).
C O N FO R M S TO JE D E C O U TLIN E
T O -247AC .
15 .30 (.6 02)
M
0.25 (.01 0)
M
D
B
2
3
2.50 (.089)
1.50 (.059)
4
-
B -
-
A -
5.5 0 (.2 17)
4
20 .30 (.8 00)
19 .70 (.7 75)
5.5 0 (.2 17)
4.5 0 (.1 77)
2X
LE A D A S S IG N M E N T S
1
2
3
4
- G A T E
- C O LLE C TO R
- EM IT TE R
- C O LLE C TO R
1
2
3
-
C -
14 .80 (.583 )
14 .20 (.559 )
4.30 (.1 70)
3.70 (.1 45)
LO N G E R LE A D ED (20m m )
V E R S IO N A V A ILA B LE (TO -247A D )
T O O R D E R A D D "-E " S U FF IX
T O P A R T N U M B ER
*
*
2.40 ( .094)
2.00 ( .079)
2 X
0.80 (.03 1)
0.40 (.01 6)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3X
3 X
2 .60 ( .10 2)
2 .20 ( .08 7)
M
S
A
C
5.45 (.2 15 )
3.40 (.1 3 3)
3.00 (.1 1 8)
2 X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n sion s in M illim e te rs a n d (In ch es )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
8
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