IRG4PSH71UDPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRG4PSH71UDPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总11页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95908
IRG4PSH71UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast Copack IGBT
Features
• UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
C
V
CES = 1200V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
V
CE(on) typ. = 2.52V
G
E
@VGE = 15V, IC = 50A
n-channel
• Creepage distance increased to 5.35mm
• Lead-Free
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require
multiple, paralleled IGBTs
SUPER - 247
• HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
Absolute Maximum Ratings
Parameter
Max.
1200
99
Units
V
A
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
IC @ TC = 25°C
IC @ TC = 100°C
50
ICM
200
ILM
Clamped Inductive Load current
Gate-to-Emitter Voltage
200
VGE
±20
V
W
°C
IF @ Tc = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
70
IFM
200
PD @ TC = 25°C
350
PD @ TC = 100°C
140
TJ
-55 to +150
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
Typ.
–––
Max.
0.36
0.36
–––
Units
°C/W
Rθ
Junction-to-Case- IGBT
JC
RθJC
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
–––
–––
Rθ
–––
0.24
–––
CS
RθJA
–––
38
N (kgf)
g (oz.)
20 (2.0)
–––
Wt
6 (0.21)
–––
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1
09/20/04
IRG4PSH71UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
VGE = 0V, IC = 1mA
IC = 70A
Collector-to-Emitter Breakdown Voltage
V(BR)CES
1200
19
—
—
—
—
—
V
V(BR)ECS
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
—
V
∆V(BR)CES/∆TJ
0.78
V/°C
V
VGE = 15V
See Fig.2, 5
—
2.52 2.70
VCE(on)
IC = 140A
Collector-to-Emitter Saturation Voltage
—
3.17
2.68
—
—
—
IC = 70A, TJ = 150°C
VCE = VGE, IC = 250µA
—
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
—
∆
∆
VGE(th)/ TJ
VCE = VGE, IC = 1.0mA
Threshold Voltage temp. coefficient
Forward Transconductance
-9.2
72
mV/°C
S
VCE = 100V, IC = 70A
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 10V
48
—
—
gfe
ICES
Zero Gate Voltage Collector Current
—
500 µA
2.0
—
—
VGE = 0V, VCE = 1200V, TJ = 150°C
IF = 70A See Fig.13
IF = 70A, TJ = 150°C
VGE = ±20V
—
—
5000
VFM
IGES
Diode Forward Voltage Drop
—
2.92 3.9
2.88 3.7
V
—
Gate-to-Emitter Leakage Current
—
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On delay time
Min. Typ. Max. Units
Conditions
IC = 70A
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
380 570
61 24
130 200
Qge
Qgc
td(on)
tr
VCC = 400V
VGE = 15V
See Fig.8
nC
ns
IC = 70A, VCC = 960V
46
77
—
—
Ω
VGE = 15V, RG = 5.0
Rise time
td(off)
tf
Turn-Off delay time
250 350
220 330
Energy losses include "tail"
See Fig. 9, 10, 11, 14
Fall time
Eon
Eoff
Etot
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
8.8
9.4
—
—
mJ
ns
18.2 19.7
TJ = 150°C, See Fig. 9, 10, 11, 14
IC = 70A, VCC = 960V
43
78
—
—
—
—
—
—
—
—
—
Rise time
Ω
td(off)
tf
VGE = 15V, RG = 5.0
Turn-Off delay time
330
480
26
Fall time
Energy losses include "tail"
ETS
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
13
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
trr
6640
420
60
VCC = 30V,
See Fig.7
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
f = 1.0MHz
TJ=25°C
See Fig
110 170 ns
180 270
TJ=125°C
TJ=25°C
14
IF = 70A
VR = 200V
See Fig
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
6.0 9.0
8.9 13
A
TJ=125°C
TJ=25°C
15
See Fig
Qrr
350 530 nC
870 1300
TJ=125°C
TJ=25°C
16
di/dt = 200A/µs
See Fig
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
150 230 A/µs
130 200
TJ=125°C
17
2
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IRG4PSH71UDPbF
40
30
20
10
0
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include
effects of
reverse recovery
Power Dissipation = 58W
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
1000
100
10
1000.0
100.0
T
= 150°C
J
T = 150°C
J
10.0
1.0
T
J
= 25°C
= 50V
T
= 25°C
J
1
V
CC
V
= 15V
GE
< 60µs PULSE WIDTH
< 60µs PULSE WIDTH
0.1
0.1
4
6
8
10
0
1
2
3
4
5
V
Gate-to-Emitter Voltage (V)
GE,
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4PSH71UDPbF
4.0
3.5
3.0
2.5
2.0
1.5
100
V
= 15V
GE
380µs PULSE WIDTH
V
= 15V
GE
I
= 140A
C
80
60
40
20
0
I
= 70A
= 35A
C
I
C
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Temperature
Junction Temperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
R1
R1
R2
R2
0.01
Ri (°C/W) τi (sec)
0.253 0.009159
0.1057 0.038041
τ
J τJ
τ
τ
Cτ
0.001
1 τ1
Ci= τi/Ri
τ
2τ2
SINGLE PULSE
0.0001
Notes:
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PSH71UDPbF
14000
12000
10000
8000
6000
4000
2000
0
20
16
12
8
V
= 0V,
= C
f = 1 MHZ
GE
V
I
= 400V
CC
C
C
C
+ C
,
C
SHORTED
ies
ge
gc
ce
= 70A
= C
C
res
oes
gc
= C + C
ce
gc
Cies
Coes
Cres
4
0
1
10
100
1000
0
100
200
300
400
V
, Collector-to-Emitter Voltage (V)
Q
Total Gate Charge (nC)
CE
G,
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
1000
22
20
18
16
R
= 5.0
Ω
V
V
T
I
= 960V
G
CC
V
V
= 15V
= 15V
GE
= 25°C
GE
CC
= 960V
J
= 70A
C
100
10
1
I
= 140A
C
I
= 70A
= 35A
C
I
C
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
R
20
30
40
T , Junction Temperature (°C)
, Gate Resistance (Ω)
J
G
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs.
Junction Temperature
Gate Resistance
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5
IRG4PSH71UDPbF
1000
100
10
70
V
T
= 20V
R
= 5.0
Ω
GE
= 125°
G
TJ = 150°C
J
60
50
40
30
20
10
0
V
= 15V
GE
CC
V
= 960V
SAFE OPERATING AREA
1
1
10
100
1000
10000
20
40
60
80
100
120
140
160
V
, Collector-to-Emitter Voltage (V)
I , Collector Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
1000
100
10
T
= 150°C
J
J
T
= 25°C
1
0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Forward Voltage Drop - V ( V )
F
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4PSH71UDPbF
400
300
200
100
0
100
80
60
40
20
0
I
= 140A
F
IF = 70A
IF = 35A
I
I
I
= 140A
= 70A
= 35A
F
F
F
V
T
T
= 200V
= 125°C
= 25°C
R
V
T
T
= 200V
= 125°C
= 25°C
R
J
J
J
J
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / µs)
f
di / dt - (A / µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
12000
I
I
I
= 140A
= 70A
= 35A
F
F
F
1700
10000
8000
6000
4000
2000
0
I
I
I
= 140A
= 70A
= 35A
F
F
F
1300
900
500
100
V
T
T
= 200V
= 125°C
= 25°C
V
T
T
= 200V
= 125°C
= 25°C
R
R
J
J
J
J
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / µs)
f
Fig. 16 - Typical Stored Charge vs. dif/dt
di / dt - (A / µs)
f
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4PSH71UDPbF
Same type
device as
D.U.T.
90%
10%
V
ge
430µF
80%
V
C
of Vce
90%
D.U.T.
t
d(off)
10%
5%
I
C
t
f
t
r
t
d(on)
t=5µs
E
on
E
off
Fig. 18a - Test Circuit for Measurement of
E =(E +E
ts on off
)
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t4
∫
Erec = Vd id dt
t1
∫
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4PSH71UDPbF
Vg
GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test Circuit
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9
IRG4PSH71UDPbF
Case Outline and Dimensions — Super-247
Super TO-247™ package is not recommended for Surface Mount Application.
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0 Ω (figure 13a)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
ꢀ Repetitive rating; pulse width limited by maximumjunction temperature.
10
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IRG4PSH71UDPbF
Super-247 (TO-274AA) Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH
ASSEMBLY LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
PART NUMBER
INTERNATIONAL RECTIFIER
LOGO
IRFPS37N50A
719C
17
89
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
ASSEMBLY LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
TOP
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/04
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11
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