IRG4RC10KDTRRPBF [INFINEON]
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| 型号： | IRG4RC10KDTRRPBF |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 晶体 晶体管 栅 |
| 文件： | 总8页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 91735A
IRG4RC10K
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
VCES = 600V
• Generation 4 IGBT design provides higher efficiency
than Generation 3
VCE(on) typ. = 2.39V
G
• Industry standard TO-252AA package
@VGE = 15V, IC = 5.0A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
9.0
IC @ TC = 100°C
5.0
A
ICM
18
ILM
18
tsc
10
µs
V
VGE
± 20
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
34
mJ
PD @ TC = 25°C
38
15
W
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (0.063 in. (1.6mm) from case )
Thermal Resistance
Parameter
Typ.
–––
Max.
3.3
Units
°C/W
g (oz)
RθJC
RθJA
Wt
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
–––
50
0.3 (0.01)
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
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1
12/30/00
IRG4RC10K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
1.2
—
—
—
—
0.58
V/°C VGE = 0V, IC = 1.0mA
2.39 2.62
IC = 5.0A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
3.25
2.63
—
—
—
IC = 9.0A
See Fig.2, 5
V
IC = 5.0A , TJ = 150°C
VCE = VGE, IC = 250µA
6.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
1.8
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 50 V, IC = 5.0A
VGE = 0V, VCE = 600V
250
2.0
1000
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
—
IGES
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 5.0A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
10
19
29
Qge
Qgc
td(on)
tr
2.9 4.3
nC VCC = 400V
VGE = 15V
See Fig.8
9.8
11
24
51
15
—
—
77
TJ = 25°C
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
IC = 5.0A, VCC = 480V
190 290
VGE = 15V, RG = 100Ω
Eon
Eoff
Ets
tsc
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.16
0.10
—
—
Energy losses include "tail"
mJ See Fig. 9,10,14
0.26 0.32
—
—
µs
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 100Ω , VCPK < 500V
TJ = 150°C,
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
11
27
—
—
—
—
—
—
—
—
—
IC = 5.0A, VCC = 480V
VGE = 15V, RG = 100Ω
Energy losses include "tail"
ns
Turn-Off Delay Time
Fall Time
67
350
0.47
7.5
220
29
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ See Fig. 10,11,14
nH Measured 5mm from package
VGE = 0V
LE
Cies
Coes
Cres
Notes:
pF
VCC = 30V
See Fig. 7
7.5
ƒ = 1.0MHz
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Repetitive rating; pulse width limited by maximum
junction temperature.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω,
(See fig. 13a)
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
2
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IRG4RC10K
4
3
2
1
0
For both:
Triangular wave:
Duty cycle: 50%
T
T
= 125°C
= 55°C
J
sink
Gate drive as specified
Power Dissipation = 1.4W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
Ideal diodes
A
0.1
1
10
100
f, Frequency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
°
T = 25 C
J
10
°
T = 150 C
J
°
T = 150 C
J
°
T = 25 C
J
V
= 50V
V
= 15V
GE
20µs PULSE WIDTH
CC
5µs PULSE WIDTH
1
5
10
15
20
1.0
2.0
V
3.0
4.0
5.0 6.0 7.0
V
, Gate-to-Emitter Voltage (V)
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
5µs PULSE WIDTH
IRG4RC10K
5.0
4.0
3.0
2.0
1.0
10
V
= 15V
GE
80 us PULSE WIDTH
I
= 10A
C
8
6
4
2
0
I
I
=
5A
C
C
= 2.5A
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
T
75
100
125
150
°
, Junction Temperature ( C)
T
°
, Case Temperature ( C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
10
D = 0.50
1
0.20
0.10
0.05
0.02
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4RC10K
400
300
200
100
0
20
16
12
8
V
= 0V,
f = 1MHz
C
V
I
= 400V
= 5.0A
GE
CC
C
C
= C + C
SHORTED
ce
ies
ge
gc ,
gc
C
= C
gc
res
C
= C + C
oes
ce
C
ies
4
C
oes
res
C
0
1
10
100
0
4
8
12
16
20
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 8 - Typical Gate Charge vs.
Fig. 7 - Typical Capacitance vs.
Gate-to-Emitter Voltage
Collector-to-Emitter Voltage
0.28
0.26
0.24
0.22
0.20
10
V
V
T
= 480V
100Ω
= 15V
= 480V
R
V
V
CC
= Ohm
CC
GE
J
G
GE
= 15V
= 25
= 5A
°
C
I
C
I
I
I
=
=
A
A
10
5
C
1
C
C
= 2.5A
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
20
40
60
80
100
°
T , Junction Temperature ( C )
R
G
, Gate Resistance
( Ω )
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4RC10K
1.2
100
10
1
R
T
=
100 Ω
V
T
= 20V
G
J
GE
J
= 125 oC
°
= 150 C
V
V
= 480V
= 15V
GE
CC
1.0
0.8
0.6
0.4
0.2
SAFE OPERATING AREA
10
1
100
1000
2
4
6
8
10
V
, Collector-to-Emitter Voltage (V)
I
, Collector Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector Current
L
D.U.T.
480V
4 X IC@25°C
V
*
RL =
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse w idth and inductor
w ill increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
6
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IRG4RC10K
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d (off)
Waveforms
10%
5%
I
C
t
f
t
r
t
d(o n )
t=5µs
E
E
o ff
o n
E
= (E
+E
o ff
)
ts
o n
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
- A -
1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
2
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
10.42 (.410)
9.40 (.370)
LEAD ASSIGNMENTS
1.02 (.040)
1.64 (.025)
1 - GATE
1
3
2 - COLLECTOR
0.51 (.020)
MIN.
3 - EMITTER
- B -
4 - COLLECTOR
1.52 (.060)
1.15 (.045)
0.89 (.035)
0.64 (.025)
3X
0.58 (.023)
0.46 (.018)
1.14 (.045)
0.76 (.030)
2X
0.25 (.010)
M
A
M
B
NOTES:
2.28 (.090)
1
2
3
4
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
4.57 (.180)
CONFORMS TO JEDEC OUTLINE TO-252AA.
DIMENSIONS SHOW N ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
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7
IRG4RC10K
Tape & Reel Information
TO-252AA
TR
TRL
T RR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTIO N
FEED DIR ECT IO N
NO T ES :
1. CO NT RO LLING DIM EN SIO N : M ILLIM ET ER.
2. ALL DIMEN SIO NS ARE SH O W N IN M ILLIM ETERS ( INCHES ).
3. O UTLINE CO N FO RM S T O EIA-481 & EIA-541.
13 INC H
16 m m
NO TES :
1. O U TLINE CO NFO RMS TO EIA-481.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
8
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