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IRG4RC10KPBF [INFINEON]

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT; 绝缘栅双极晶体管短路额定IGBT超快
IRG4RC10KPBF
型号： IRG4RC10KPBF
厂家： Infineon    Infineon
描述：

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
绝缘栅双极晶体管短路额定IGBT超快

晶体 晶体管 双极性晶体管 栅
文件： 总10页 (文件大小：185K)
中文：  中文翻译
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PD 95389  
IRG4RC10KPbF  
Short Circuit Rated  
UltraFast IGBT  
INSULATED GATE BIPOLAR TRANSISTOR  
Features  
C
• Short Circuit Rated UltraFast: Optimized for high  
operating frequencies >5.0 kHz , and Short Circuit  
Rated to 10µs @ 125°C, VGE = 15V  
VCES = 600V  
• Generation 4 IGBT design provides higher efficiency  
than Generation 3  
VCE(on) typ. = 2.39V  
G
• Industry standard TO-252AA package  
• Lead-Free  
@VGE = 15V, IC = 5.0A  
E
n-channel  
Benefits  
• Generation 4 IGBT's offer highest efficiency available  
• IGBT's optimized for specified application conditions  
D-PAK  
TO-252AA  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Breakdown Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
Clamped Inductive Load Current ‚  
Short Circuit Withstand Time  
Gate-to-Emitter Voltage  
600  
V
IC @ TC = 25°C  
9.0  
IC @ TC = 100°C  
5.0  
A
ICM  
18  
ILM  
18  
tsc  
10  
µs  
V
VGE  
± 20  
EARV  
Reverse Voltage Avalanche Energy ƒ  
Maximum Power Dissipation  
34  
mJ  
PD @ TC = 25°C  
38  
15  
W
PD @ TC = 100°C Maximum Power Dissipation  
TJ  
Operating Junction and  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (0.063 in. (1.6mm) from case )  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
3.3  
Units  
°C/W  
g (oz)  
RθJC  
RθJA  
Wt  
Junction-to-Case  
Junction-to-Ambient (PCB mount)*  
Weight  
–––  
50  
0.3 (0.01)  
–––  
* When mounted on 1" square PCB (FR-4 or G-10 Material).  
For recommended footprint and soldering techniques refer to application note #AN-994  
www.irf.com  
1
06/10/04  
IRG4RC10KPbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
VGE = 0V, IC = 250µA  
VGE = 0V, IC = 1.0A  
V(BR)CES  
V(BR)ECS  
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage  
Collector-to-Emitter Breakdown Voltage  
600  
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage „ 18  
—
—
—
—
3.0  
—
1.2  
—
—
—
—
0.58  
V/°C VGE = 0V, IC = 1.0mA  
IC = 5.0A  
2.39 2.62  
VGE = 15V  
VCE(ON)  
VGE(th)  
Collector-to-Emitter Saturation Voltage  
Gate Threshold Voltage  
3.25  
2.63  
—
—
—
IC = 9.0A  
See Fig.2, 5  
V
IC = 5.0A , TJ = 150°C  
VCE = VGE, IC = 250µA  
6.5  
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage  
-11  
1.8  
—
mV/°C VCE = VGE, IC = 250µA  
gfe  
Forward Transconductance ꢀ  
—
S
VCE = 50 V, IC = 5.0A  
VGE = 0V, VCE = 600V  
250  
2.0  
1000  
ICES  
Zero Gate Voltage Collector Current  
µA  
—
VGE = 0V, VCE = 10V, TJ = 25°C  
VGE = 0V, VCE = 600V, TJ = 150°C  
VGE = ±20V  
—
IGES  
Gate-to-Emitter Leakage Current  
—
±100 nA  
Switching Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
IC = 5.0A  
Qg  
Total Gate Charge (turn-on)  
Gate - Emitter Charge (turn-on)  
Gate - Collector Charge (turn-on)  
Turn-On Delay Time  
Rise Time  
—
—
—
—
—
—
—
—
—
—
10  
19  
29  
Qge  
Qgc  
td(on)  
tr  
2.9 4.3  
nC VCC = 400V  
VGE = 15V  
See Fig.8  
9.8  
11  
24  
51  
15  
—
—
77  
TJ = 25°C  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
IC = 5.0A, VCC = 480V  
190 290  
VGE = 15V, RG = 100Ω  
Energy losses include "tail"  
Eon  
Eoff  
Ets  
tsc  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Short Circuit Withstand Time  
0.16  
0.10  
—
—
mJ See Fig. 9,10,14  
0.26 0.32  
—
—
µs  
VCC = 400V, TJ = 125°C  
VGE = 15V, RG = 100Ω , VCPK < 500V  
TJ = 150°C,  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Rise Time  
—
—
—
—
—
—
—
—
—
11  
27  
—
—
—
—
—
—
—
—
—
IC = 5.0A, VCC = 480V  
VGE = 15V, RG = 100Ω  
Energy losses include "tail"  
ns  
Turn-Off Delay Time  
Fall Time  
67  
350  
0.47  
7.5  
220  
29  
Ets  
Total Switching Loss  
Internal Emitter Inductance  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
mJ See Fig. 10,11,14  
nH Measured 5mm from package  
VGE = 0V  
LE  
Cies  
Coes  
Cres  
Notes:  
pF  
VCC = 30V  
See Fig. 7  
7.5  
ƒ = 1.0MHz  

Repetitive rating; VGE = 20V, pulse width limited by  
max. junction temperature. ( See fig. 13b )  
ƒ
Repetitive rating; pulse width limited by maximum  
junction temperature.  
‚
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω,  
(See fig. 13a)  
„
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.  
Pulse width 5.0µs, single shot.  
2
www.irf.com  
IRG4RC10KPbF  
4
3
2
1
0
For both:  
Triangular wave:  
Duty cycle: 50%  
T = 125°C  
J
sink  
T
= 55°C  
Gate drive as specified  
Power Dissipation = 1.4W  
Clamp voltage:  
80%of rated  
Square wave:  
60%of rated  
voltage  
Ideal diodes  
A
0.1  
1
10  
100  
f, Frequency (kHz)  
Fig. 1 - Typical Load Current vs. Frequency  
(Load Current = IRMS of fundamental)  
100  
10  
1
100  
°
T = 25 C  
J
10  
°
T = 150 C  
J
°
T = 150 C  
J
°
T = 25 C  
J
V
= 50V  
V
= 15V  
GE  
20µs PULSE WIDTH  
CC  
5µs PULSE WIDTH  
1
5
10  
15 20  
1.0  
2.0  
3.0  
4.0  
5.0 6.0 7.0  
V
, Gate-to-Emitter Voltage (V)  
V
, Collector-to-Emitter Voltage (V)  
GE  
CE  
Fig. 2 - Typical Output Characteristics  
Fig. 3 - Typical Transfer Characteristics  
www.irf.com  
3
5µs PULSE WIDTH  
IRG4RC10KPbF  
5.0  
4.0  
3.0  
2.0  
1.0  
10  
V
= 15V  
GE  
80 us PULSE WIDTH  
I
= 10A  
C
8
6
4
2
0
I
I
=
5A  
C
C
= 2.5A  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
25  
50  
75  
100  
125  
150  
°
T , Junction Temperature ( C)  
°
J
T , Case Temperature ( C)  
C
Fig. 4 - Maximum Collector Current vs. Case  
Fig. 5 - Typical Collector-to-Emitter Voltage  
Temperature  
vs. Junction Temperature  
10  
D = 0.50  
1
0.20  
0.10  
0.05  
0.02  
P
DM  
SINGLE PULSE  
(THERMAL RESPONSE)  
0.01  
0.1  
t
1
t
2
Notes:  
1. Duty factor D = t / t  
1
2
2. Peak T =P  
DM  
x Z  
+ T  
C
J
thJC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case  
4
www.irf.com  
IRG4RC10KPbF  
400  
300  
200  
100  
0
20  
16  
12  
8
V
= 0V,  
f = 1MHz  
C SHORTED  
ce  
V
I
= 400V  
= 5.0A  
GE  
CC  
C
C
= C + C  
ies  
ge  
gc ,  
C
= C  
res  
gc  
C
= C + C  
oes  
ce  
gc  
C
ies  
4
C
C
oes  
res  
0
1
10  
100  
0
4
8
12  
16  
20  
V
, Collector-to-Emitter Voltage (V)  
Q , Total Gate Charge (nC)  
CE  
G
Fig. 8 - Typical Gate Charge vs.  
Fig. 7 - Typical Capacitance vs.  
Gate-to-Emitter Voltage  
Collector-to-Emitter Voltage  
0.28  
0.26  
0.24  
0.22  
0.20  
10  
V
V
T
= 480V  
100Ω  
R
V
V
CC  
= Ohm  
= 15V  
CC  
GE  
J
G
GE  
= 15V  
= 25  
= 5A  
°
C
= 480V  
I
C
I
I
I
=
=
=
A
A
A
10  
5
C
C
C
1
2.5  
0.1  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
0
20  
40  
60  
80  
100  
°
T , Junction Temperature ( C )  
R
G
, Gate Resistance  
( Ω )  
J
Fig. 9 - Typical Switching Losses vs. Gate  
Fig. 10 - Typical Switching Losses vs.  
Resistance  
Junction Temperature  
www.irf.com  
5
IRG4RC10KPbF  
1.2  
100  
10  
1
R
G
T
J
= h
100 Ω  
V
T
= 20V  
GE  
J
= 125 oC  
°
= 150 C  
V
V
= 480V  
= 15V  
GE  
CC  
1.0  
0.8  
0.6  
0.4  
0.2  
SAFE OPERATING AREA  
10  
1
100  
1000  
2
4
6
8
10  
V
, Collector-to-Emitter Voltage (V)  
I
, Collector Current (A)  
CE  
C
Fig. 11 - Typical Switching Losses vs.  
Fig. 12 - Turn-Off SOA  
Collector Current  
L
D.U.T.  
480V  
4 X IC@25°C  
V *  
RL  
=
C
50V  
0 - 480V  
1000V  
480µF  
960V  
* Driver same type as D.U.T.; Vc = 80% of Vce(max)  
* Note: Due to the 50V power supply, pulse width and inductor  
will increase to obtain rated Id.  
Fig. 13b - Pulsed Collector  
Fig. 13a - Clamped Inductive  
Load Test Circuit  
Current Test Circuit  
I
C
L
Fig. 14a - Switching Loss  
D.U.T.  
Driver*  
V
C
Test Circuit  
50V  
1000V  
* Driver same type  
as D.U.T., VC = 480V  
6
www.irf.com  
IRG4RC10KPbF  
90%  
10%  
V
C
90%  
Fig. 14b - Switching Loss  
t
d(off)  
Waveforms  
10%  
5%  
I
C
t
f
t
r
t
d(on)  
t=5µs  
E
E
off  
on  
E
= (E +E  
)
off  
ts  
on  
www.irf.com  
7
IRG4RC10KPbF  
D-Pak (TO-252AA) Package Outline  
Dimensions are shown in millimeters (inches)  
2.38 (.094)  
2.19 (.086)  
6.73 (.265)  
6.35 (.250)  
1.14 (.045)  
0.89 (.035)  
- A -  
1.27 (.050)  
0.88 (.035)  
5.46 (.215)  
5.21 (.205)  
0.58 (.023)  
0.46 (.018)  
4
6.45 (.245)  
5.68 (.224)  
6.22 (.245)  
5.97 (.235)  
10.42 (.410)  
9.40 (.370)  
1.02 (.040)  
1.64 (.025)  
LEAD ASSIGNMENTS  
1 - GATE  
1
2
3
2 - DRAIN  
0.51 (.020)  
MIN.  
- B -  
3 - SOURCE  
4 - DRAIN  
1.52 (.060)  
1.15 (.045)  
0.89 (.035)  
0.64 (.025)  
3X  
0.58 (.023)  
0.46 (.018)  
1.14 (.045)  
0.76 (.030)  
2X  
0.25 (.010)  
M A M B  
NOTES:  
2.28 (.090)  
1
2
3
4
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.  
CONTROLLING DIMENSION : INCH.  
4.57 (.180)  
CONFORMS TO JEDEC OUTLINE TO-252AA.  
DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,  
SOLDER DIP MAX. +0.16 (.006).  
D-Pak (TO-252AA) Part Marking Information  
EXAMPLE: THIS IS AN IRFR120  
PART NUMBER  
WITH ASSEMBLY  
LOT CODE 1234  
RECTIFIER  
ASSEMBLED ON WW 16, 1999  
INTERNATIONAL  
DATE CODE  
YEAR 9 = 1999  
WEEK 16  
IRFR120  
916A  
34  
LOGO  
IN THE ASSEMBLYLINE "A"  
12  
LINE A  
No te : "P" in assembly line  
ASSEMBLY  
pos ition indi cates "L ead-F ree"  
LOT CODE  
OR  
PART NUMBER  
DAT E CODE  
INTERNATIONAL  
RECTIFIER  
LOGO  
IRFR120  
P916A  
34  
P = DE S IGNAT E S L E AD-F R E E  
PRODUCT (OPTIONAL)  
YEAR 9 = 1999  
12  
ASSEMBLY  
LOT CODE  
WEEK 16  
A = ASSEMBLYSITE CODE  
8
www.irf.com  
IRG4RC10KPbF  
D-Pak (TO-252AA) Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
TR  
TRL  
TRR  
16.3 ( .641 )  
15.7 ( .619 )  
16.3 ( .641 )  
15.7 ( .619 )  
12.1 ( .476 )  
11.9 ( .469 )  
8.1 ( .318 )  
7.9 ( .312 )  
FEED DIRECTION  
FEED DIRECTION  
NOTES :  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).  
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
13 INCH  
16 mm  
NOTES :  
1. OUTLINE CONFORMS TO EIA-481.  
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 06/04  
www.irf.com  
9
Note: For the most current drawings please refer to the IR website at:  
http://www.irf.com/package/  

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