IRG4PSH71U [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRG4PSH71U |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总8页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91685
IRG4PSH71U
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
VCES = 1200V
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
VCE(on) typ. = 2.50V
G
(minimum switching and conduction losses) than
prior generations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
@VGE = 15V, IC = 50A
E
n-channel
• Creepage distance increased to 5.35mm
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require
multiple, paralleled IGBTs
SUPER - 247
Absolute Maximum Ratings
Parameter
Max.
1200
99
Units
V
A
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
ICM
Continuous Collector Current
Pulse Collector Current
50
200
Clamped Inductive Load current
ILM
200
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
±20
150
350
140
V
mJ
W
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
TJ
-55 to +150
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
°C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
Typ.
–––
0.24
–––
Max.
0.36
–––
38
Units
°C/W
RθJC
RθCS
RθJA
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Weight
–––
20 (2.0)
–––
N (kgf)
g (oz.)
Wt
6 (0.21)
–––
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1
5/24/04
IRG4PSH71U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
GE = 0V, IC = 250µA
GE = 0V, IC = 1.0A
GE = 0V, IC = 1mA
Collector-to-Emitter Breakdown Voltage
V(BR)CES
V
V
V
1200
19
—
—
—
—
—
V
V(BR)ECS
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
—
V
∆V(BR)CES/∆TJ
0.78
V/°C
V
IC = 70A
VGE = 15V
See Fig.2, 5
—
2.52 2.70
VCE(on)
IC = 140A
Collector-to-Emitter Saturation Voltage
—
3.17
2.68
—
—
—
IC = 70A, TJ = 150°C
—
VGE(th)
V
CE = VGE, IC = 250µA
CE = VGE, IC = 1.0mA
CE = 100V, IC = 70A
GE = 0V, VCE = 1200V
GE = 0V, VCE = 10V
Gate Threshold Voltage
3.0
—
6.0
—
∆VGE(th)/∆TJ
V
V
V
V
V
V
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
-9.2
72
mV/°C
S
48
—
—
gfe
ICES
—
500 µA
2.0
—
—
GE = 0V, VCE = 1200V, TJ = 150°C
GE = ±20V
—
—
5000
IGES
Gate-to-Emitter Leakage Current
—
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On delay time
Rise time
Min. Typ. Max. Units
370 560
Conditions
IC = 70A
CC = 400V
VGE = 15V
IC = 70A, VCC = 960V
GE = 15V, RG = 5.0Ω
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Qge
Qgc
td(on)
tr
V
See Fig.8
61
120
51
24
50
—
—
nC
V
70
ns
td(off)
tf
Turn-Off delay time
Fall time
280 390
170 260
Energy losses include "tail"
See Fig. 9, 10, 11, 14
Eon
Eoff
Etot
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
4.77
9.54
—
—
mJ
ns
14.3 15.8
TJ = 150°C, See Fig. 9, 10, 11, 14
IC = 70A, VCC = 960V
49
70
—
—
—
—
—
—
—
—
—
td(off)
tf
V
GE = 15V, RG = 5.0Ω
Turn-Off delay time
Fall time
390
360
25
Energy losses include "tail"
ETS
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
13
nH Measured 5mm from package
Cies
Coes
Cres
V
V
GE = 0V
7280
290
50
CC = 30V,
See Fig.7
Output Capacitance
Reverse Transfer Capacitance
pF
f = 1.0MHz
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0 Ω (figure 13a)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
ꢀ Repetitive rating; pulse width limited by maximumjunction temperature.
2
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IRG4PSH71U
60
50
40
30
20
10
0
Triangular wave:
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 58W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
Ideal diodes
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
1000
100
10
1000.0
100.0
T
= 150°C
J
T
= 150°C
J
10.0
1.0
T
= 25°C
= 50V
T
= 25°C
J
J
1
V
CC
V
= 15V
GE
< 60µs PULSE WIDTH
< 60µs PULSE WIDTH
0.1
0.1
4
6
8
10
0
1
2
3
4
5
V
Gate-to-Emitter Voltage (V)
GE,
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4PSH71U
4.0
3.5
3.0
2.5
2.0
100
80
60
40
20
0
V
= 15V
GE
380µs PULSE WIDTH
V
= 15V
GE
I
= 140A
C
I
= 70A
= 35A
C
I
C
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
, Junction Temperature (°C)
T
J
, Junction Temperature (°C)
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Temperature
JunctionTemperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
R1
R1
R2
R2
0.01
Ri (°C/W) τi (sec)
τ
J τJ
τ
0.253
0.009159
τ
Cτ
0.001
1τ1
Ci= τi/Ri
τ
2τ2
0.1057
0.038041
SINGLE PULSE
0.0001
Notes:
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
1E-005
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PSH71U
14000
12000
10000
8000
6000
4000
2000
0
20
16
12
8
V
= 0V,
= C
f = 1 MHZ
GE
V
I
= 400V
CC
= 70A
C
C
C
+ C
,
C
ce
SHORTED
ies
ge
gc
C
= C
res
oes
gc
= C + C
ce
gc
Cies
Coes
Cres
4
0
1
10
100
1000
0
100
200
300
400
V
, Collector-to-Emitter Voltage (V)
Q
Total Gate Charge (nC)
CE
G,
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
1000
100
10
25
20
15
10
R
V
= 5.0
V
= 960V
= 15V
Ω
G
CC
= 15V
V
T
I
GE
GE
V
= 960V
= 25°C
CC
J
= 70A
C
I
I
= 140A
C
C
= 70A
= 35A
I
C
1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
)
40
T , Junction Temperature (°C)
Ω
R , Gate Resistance (
J
G
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
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5
IRG4PSH71U
70
1000
100
10
R
= 5.0
Ω
V
T
= 20V
G
GE
= 125°
TJ = 150°C
60
50
40
30
20
10
0
J
V
= 15V
GE
CC
V
= 960V
SAFE OPERATING AREA
1
20
40
60
80
100
120
140
1
10
100
1000
10000
I , Collector Current (A)
V
, Collector-to-Emitter Voltage (V)
C
CE
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-EmitterCurrent
6
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IRG4PSH71U
L
D.U.T.
960V
RL =
V *
C
4 X IC@25°C
50V
0 - 960V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
D.U.T.
Fig. 14a - Switching Loss
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 960V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(off)
Waveforms
10%
5%
I
C
t
t
f
r
t
d(on)
t=5µs
E
E
off
on
E
= (E +E
)
ts
on
off
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7
IRG4PSH71U
Super-247™ (TO-274AA) Package Outline
0.13 [.005]
0.25 [.010]
B A
5.50 [.216]
4.50 [.178]
16.10 [.632]
15.10 [.595]
13.90 [.547]
13.30 [.524]
A
2.15 [.084]
1.45 [.058]
3.00 [.118]
2.00 [.079]
2X R
1.30 [.051]
0.70 [.028]
16.10 [.633]
15.50 [.611]
4
4
20.80 [.818]
19.80 [.780]
C
1
2
3
B
Ø 1.60 [.063]
MAX.
E
E
14.80 [.582]
13.80 [.544]
4.25 [.167]
3.85 [.152]
1.30 [.051]
1.10 [.044]
3X
1.60 [.062]
3X
2.35 [.092]
1.65 [.065]
1.45 [.058]
5.45 [.215]
2X
L E AD AS S IGNME NT S
SECTION E-E
0.25 [.010]
B
A
IGBT
MOS F ET
NOTES:
1. DIMENS IONING AND TOLERANCING PER ASME Y14.5M-1994.
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ]
3. CONTROLLINGDIMENSION: MILLIMETER
1 - GATE
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
2 - COL L E CT OR
3 - EMITTER
4 - COL L E CT OR
4. OUT LINE CONF ORMS T O JE DE C OUT L INE T O-274AA
Super-247™ (TO-274AA)Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH
PART NUMBER
ASSEMBLY LOT CODE A8B9
INTERNATIONAL RECTIFIER
LOGO
IRFPS37N50A
A8B9
0020
DATE CODE
(YYWW)
ASSEMBLY LOT CODE
YY = YEAR
WW = WEEK
TOP
Super TO-247™ package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.5/04
8
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