IRG7PSH73K10PBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRG7PSH73K10PBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总9页 (文件大小：393K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97406A
IRG7PSH73K10PbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) Trench IGBT Technology
C
VCES = 1200V
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 10 μS short Circuit SOA
I
C(Nominal) = 75A
G
tSC ≥ 10μs, TJ(max) =175°C
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
• Tight Parameter Distribution
• Lead Free Package
E
VCE(on) typ. = 2.0V
n-channel
C
E
C
Benefits
G
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
Super-247
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
G
C
E
G ate
C ollector
Em itter
Absolute Maximum Ratings
Parameter
Max.
1200
220
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
IC @ TC = 25°C
IC @ TC = 100°C
130
75
INOMINAL
A
ICM
Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
225
ILM
300
VGE
V
±30
PD @ TC = 25°C
1150
580
W
PD @ TC = 100°C
TJ
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.13
–––
Units
RθJC (IGBT)
RθCS
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
1
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IRG7PSH73K10PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
1200
—
1.58
2.0
—
V
VGE = 0V, IC = 250μA
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage
—
—
V/°C VGE = 0V, IC = 5.0mA (25°C-175°C)
IC = 75A, VGE = 15V, TJ = 25°C
—
2.3
—
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.50
2.60
—
V
IC = 75A, VGE = 15V, TJ = 150°C
IC = 75A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 3.5mA
—
—
VGE(th)
ΔVGE(th)/ΔTJ
gfe
Gate Threshold Voltage
5.0
—
7.5
—
V
Threshold Voltage temp. coefficient
Forward Transconductance
-18
53
mV/°C VCE = VGE, IC = 3.5mA (25°C - 175°C)
—
—
S
VCE = 50V, IC = 75A, PW = 80μs
ICES
Collector-to-Emitter Leakage Current
—
1.0
25
VGE = 0V, VCE = 1200V, TJ = 25°C
VGE = 0V, VCE = 1200V, TJ = 175°C
μA
—
2340
—
—
IGES
Gate-to-Emitter Leakage Current
—
±400
nA VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
360
540
130
270
8.7
5.6
14.3
81
IC = 75A
nC VGE = 15V
VCC = 600V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
87
180
7.7
IC = 75A, VCC = 600V, VGE = 15V
mJ RG = 4.7Ω, L = 200μH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 75A, VCC = 600V, VGE = 15V
4.6
12.3
63
118
267
114
11
138
291
134
—
ns RG = 4.7Ω, L = 200μH, TJ = 25°C
td(off)
tf
Turn-Off delay time
Fall time
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
IC = 75A, VCC = 600V, VGE=15V
mJ RG=4.7Ω, L=200μH, TJ = 175°C
Energy losses include tail & diode reverse recovery
IC = 75A, VCC = 600V, VGE=15V
ns RG = 4.7Ω, L = 200μH
7.4
—
18.4
62
—
—
110
330
237
9450
340
230
—
td(off)
tf
Turn-Off delay time
Fall time
—
TJ = 175°C
—
Cies
Coes
Cres
Input Capacitance
—
pF VGE = 0V
VCC = 30V
f = 1.0Mhz
IC = 300A
Output Capacitance
Reverse Transfer Capacitance
—
—
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
10
V
CC = 960V, Vp =1200V
Rg = 4.7Ω, VGE = +20V to 0V, TJ =175°C
CC = 600V, Vp =1200V ,TJ = 150°C
Rg = 4.7Ω, VGE = +15V to 0V
—
—
μs
V
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
VCC = 80% (VCES), VGE = 20V, L = 20μH, RG = 5.0Ω.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
ꢀ Rθ is measured at TJ of approximately 90°C.
2
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IRG7PSH73K10PbF
100
80
60
40
20
0
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 164W
Square wave:
60% of rated
voltage
I
Ideal diodes
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
240
200
160
120
80
1200
1000
800
600
400
200
0
40
0
0
25
50
75
T
100 125 150 175
(°C)
25
50
75
100
125
150
175
T , Case Temperature(°C)
C
C
Fig. 2 - Maximum DC Collector Current vs.
Fig. 3 - Power Dissipation vs. Case
Case Temperature
Temperature
1000
1000
100
10 μs
100
10
1
10
100 μs
1ms
1
DC
0.1
1
10
100
(V)
1000
10000
10
100
1000
10000
V
V
(V)
CE
CE
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE =20V
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3
IRG7PSH73K10PbF
400
400
300
200
100
0
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
300
200
100
0
0
2
4
6
8
10 12 14 16 18 20
(V)
0
2
4
6
8
10 12 14 16 18 20
V
V (V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
25
20
15
400
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
300
200
100
0
I
I
I
= 38A
= 75A
= 150A
CE
CE
CE
10
5
0
0
2
4
6
8
10 12 14 16 18 20
(V)
5
10
15
20
V
CE
V
(V)
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 8 - Typ. IGBT Output Characteristics
TJ = -40°C
TJ = 175°C; tp = 80μs
25
25
20
15
10
5
20
15
10
5
I
I
I
= 38A
= 75A
= 150A
I
I
I
= 38A
= 75A
= 150A
CE
CE
CE
CE
CE
CE
0
0
5
10
15
20
5
10
15
20
V
(V)
GE
V
(V)
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
TJ = 175°C
4
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IRG7PSH73K10PbF
40000
30000
20000
10000
0
400
300
200
100
0
T
= 25°C
J
T
= 175°C
J
E
ON
E
OFF
4
6
8
10
12
14
16
40
60
80
100
(A)
120
140
160
V
, Gate-to-Emitter Voltage(V)
GE
I
C
Fig. 12- Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 600V, RG = 5.0Ω; VGE = 15V
1000
25000
td
OFF
E
ON
20000
15000
t
F
100
t
R
E
OFF
10000
5000
0
td
ON
10
20
40
60
80 100 120 140 160
0
10
20
30
(Ω)
40
50
I
(A)
C
R
G
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 600V, RG = 5.0Ω; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 600V, ICE = 75A; VGE = 15V
10000
450
400
350
300
250
200
150
100
40
35
30
25
20
15
10
5
I
sc
td
T
OFF
sc
1000
t
R
t
F
100
10
td
ON
0
10
20
30
(Ω)
40
50
8
10
12
14
(V)
16
18
R
V
G
GE
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 600V, ICE = 75A; VGE = 15V
Fig. 17 - VGE vs. Short Circuit Time
VCC = 600V; TC = 150°C
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5
IRG7PSH73K10PbF
100000
16
14
12
10
8
400V
600V
10000
1000
100
Cies
6
4
Coes
Cres
20
2
0
0
100
200
300
400
0
40
60
(V)
80
100
Q
, Total Gate Charge (nC)
V
G
CE
Fig. 19- Typical Gate Charge vs. VGE
ICE = 75A; L = 330μH
Fig. 18 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
1
0.1
D = 0.50
0.20
0.10
0.01
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.0309 0.000104
0.0520 0.000868
0.0471 0.003620
0.05
τ
JτJ
τ
τ
Cτ
0.02
0.01
τ
1τ1
τ
2 τ2
3τ3
Ci= τi/Ri
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case
6
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IRG7PSH73K10PbF
L
L
80 V
+
-
DUT
VCC
DUT
Vclamped
Rg
0
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
L
DIODE CLAMP
VCC
DUT /
VCC
DRIVER
Rg
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R = VCC
ICM
C fo rce
100K
D1
22K
C sen se
DUT
VCC
0.0075μ
G force
Rg
DUT
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
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7
IRG7PSH73K10PbF
900
800
700
600
500
400
300
200
100
0
180
160
140
120
100
80
900
180
160
140
120
100
80
tf
800
TEST
CURRENT
tr
700
600
90% ICE
500
400
300
200
100
0
60
10% VCE
60
10 % tes t cur rent
90% test current
10% VCE
40
40
10% ICE
20
20
0
0
Eon Loss
Eoff Loss
-100
-20
-100
-20
-4 -2
0
2
4
6
8
10 12
-3 -2 -1 0 1 2 3 4 5 6 7
time(μs)
time (μs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
800
700
800
700
600
500
400
300
200
100
0
VCE
600
500
400
300
200
100
0
ICE
-100
-100
-10 -5
0
5
10 15 20
Time (uS)
Fig. WF3 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
8
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IRG7PSH73K10PbF
Case Outline and Dimensions — Super-247
Super-247 (TO-274AA) Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH
ASSEMBLY LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
PART NUMBER
INTERNATIONAL RECTIFIER
LOGO
IRFPS37N50A
719C
17
89
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
ASSEMBLY LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
TOP
Super-247 package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/10
www.irf.com
9
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