IRG7R313UTRRPBF [INFINEON]
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel,;
| 型号： | IRG7R313UTRRPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, 栅 |
| 文件： | 总8页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97484
IRG7R313UPbF
PDP TRENCH IGBT
Key Parameters
Features
VCE min
330
1.35
160
150
V
V
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
circuits in PDP applications
VCE(ON) typ. @ IC = 20A
IRP max @ TC= 25°C
TJ max
A
TM
l
Low VCE(on) and Energy per Pulse (EPULSE
for improved panel efficiency
)
°C
l
l
High repetitive peak current capability
Lead Free package
C
C
E
C
G
G
D-Pak
E
IRG7R313UPbF
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on)andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current
40
20
A
W
160
78
Power Dissipation
31
Power Dissipation
0.63
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
300
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.6
°C/W
www.irf.com
1
3/31/10
IRG7R313UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 250μA
Parameter
Collector-to-Emitter Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
330 ––– –––
––– 0.4 ––– V/°C
BVCES
V
Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 12A
V
/ T
J
ΔΒ CES Δ
––– 1.21 1.45
––– 1.35 –––
1.75 –––
VGE = 15V, ICE = 20A
VCE(on)
VGE = 15V, ICE = 40A
Static Collector-to-Emitter Voltage
V
V
VGE = 15V, ICE = 60A
––– 2.14 –––
––– 1.41 –––
VGE = 15V, ICE = 20A, TJ = 150°C
VCE = VGE, ICE = 1.0mA
VGE(th)
Gate Threshold Voltage
2.2
–––
–––
––– 4.7
ΔVGE(th)/ΔTJ
ICES
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
-10 ––– mV/°C
VCE = 330V, VGE = 0V
1.0
25
75
10
VCE = 330V, VGE = 0V, TJ = 125°C
VCE = 330V, VGE = 0V, TJ = 150°C
VGE = 30V
μA
150
–––
–––
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
––– ––– 100
––– ––– -100
nA
V
V
V
GE = -30V
CE = 25V, ICE = 12A
CE = 240V, IC = 12A, VGE = 15V
gfe
Qg
Qgc
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
47
33
12
–––
–––
–––
S
nC
IC = 12A, VCC = 196V
RG = 10Ω, L=210μH
TJ = 25°C
1.0 –––
13
65
68
11
14
86
–––
–––
–––
–––
–––
–––
ns
ns
td(off)
tf
td(on)
tr
td(off)
tf
Turn-Off delay time
Fall time
IC = 12A, VCC = 196V
RG = 10Ω, L=200μH, LS= 150nH
TJ = 150°C
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
––– 190 –––
100 ––– –––
VCC = 240V, VGE = 15V, R = 5.1
Ω
G
tst
Shoot Through Blocking Time
ns
L = 220nH, C= 0.20μF, VGE = 15V
VCC = 240V, R = 5.1 TJ = 25°C
––– 480 –––
––– 570 –––
EPULSE
Ω,
L = 220nH, C= 0.20μF, VGE = 15V
Energy per Pulse
μJ
G
VCC = 240V, R = 5.1
TJ = 100°C
Ω,
G
Class 1C
Human Body Model
Machine Model
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
ESD
V
GE = 0V
Cies
Coes
Cres
LC
Input Capacitance
––– 880 –––
VCE = 30V
Output Capacitance
–––
–––
–––
47
26
–––
–––
pF
ƒ = 1.0MHz
Between lead,
Reverse Transfer Capacitance
Internal Collector Inductance
4.5 –––
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
7.5 –––
and center of die contact
Notes:
Half sine wave with duty cycle = 0.05, ton=2μsec.
R is measured at TJ of approximately 90°C.
θ
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
www.irf.com
IRG7R313UPbF
200
160
120
80
200
160
120
80
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
40
40
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
200
200
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
160
120
80
160
120
80
40
40
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
200
14
I
= 12A
C
12
10
8
160
120
T = 25°C
J
T
= 150°C
J
T
T
= 25°C
J
J
6
= 150°C
80
40
0
4
2
0
0
5
10
15
20
2
4
6
8
10
12
14
16
V
(V)
V
(V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
www.irf.com
3
IRG7R313UPbF
200
160
120
80
50
40
30
20
10
0
ton= 2μs
Duty cycle = 0.05
Half Sine Wave
40
0
25
50
75
100
125
150
0
25
50
75
(°C)
100
125
150
Case Temperature (°C)
T
C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 7. Maximum Collector Current vs. Case Temperature
1300
1300
V
= 240V
L = 220nH
C = 0.4μF
CC
1200
1100
1000
900
1200
1100
1000
900
L = 220nH
C = variable
100°C
100°C
25°C
25°C
800
700
800
600
700
500
400
600
160 170 180 190 200 210 220 230
195 200 205 210 215 220 225 230 235 240
Collector-to-Emitter Voltage (V)
I , Peak Collector Current (A)
C
V
CE,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
1600
100
V
= 240V
CC
C= 0.4μF
C= 0.3μF
L = 220nH
t = 1μs half sine
1400
1200
1000
800
10 μs
10
100 μs
1ms
1
C= 0.2μF
600
0.1
400
1
10
100
1000
25
50
75
100
125
150
V
(V)
CE
T , Temperature (ºC)
J
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
www.irf.com
IRG7R313UPbF
10000
1000
100
20
16
12
8
I
= 12A
D
V
V
V
= 240V
DS
= 150V
= 60V
DS
DS
Cies
4
Coes
Cres
0
10
0
10
20
30
40
0
100
200
Q
Total Gate Charge (nC)
G
V
(V)
CE
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
1
D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
τι
(sec)
Ri (°C/W)
0.1
τJ
0.05
0.018158 0.000006
0.557463 0.00017
0.666413 0.001311
0.305061 0.006923
τC
τJ
τ1
τ
0.02
τ
τ
3 τ3
τ4
2 τ2
τ1
τ4
0.01
0.01
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRG7R313UPbF
A
RG
C
PULSE A
PULSE B
DRIVER
L
VCC
B
Ipulse
RG
DUT
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
www.irf.com
IRG7R313UPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WITH ASSEMBLY
INTERNATIONAL
LOT CODE 1234
RECTIFIER
ASSEMBLED ON WW16, 2001
IN THE ASSEMBLY LINE "A"
DATE CODE
YEAR 1 = 2001
WEEK 16
IRFR120
116A
LOGO
12
34
LINE A
Note: "P" in assembly lineposition
ASSEMBLY
LOT CODE
indicates "Lead-F ree"
"P" in assembly line position indicates
"Lead-F ree" qualification to the cons umer-level
PART NUMBER
DAT E CODE
INTERNATIONAL
RECTIFIER
OR
IRFR120
12 34
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TOTHE
CONSUMER LEVEL (OPTIONAL)
AS S E MB L Y
LOT CODE
YEAR 1 = 2001
WEEK 16
A= ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
7
IRG7R313UPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2010
8
www.irf.com
相关型号：
IRG7S313U
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3
INFINEON
IRG7S313UTRL
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3
INFINEON
IRG7S313UTRLPBF
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
IRG7S313UTRR
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3
INFINEON
IRG7S313UTRRPBF
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
INFINEON
©2020 ICPDF网 联系我们和版权申明