IRG7RA13UTRPBF [INFINEON]
Advanced Trench IGBT Technology;
| 型号： | IRG7RA13UTRPBF |
| 厂家： | 
Infineon |
| 描述： | Advanced Trench IGBT Technology 双极性晶体管 |
| 文件： | 总8页 (文件大小：259K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PDP TRENCH IGBT
IRG7RA13UPbF
Key Parameters
Features
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
VCE min
CE(ON) typ. @ IC = 20A
RP max @ TC= 25°C
360
1.42
276
150
V
V
V
A
circuits in PDP applications
TM
I
Low VCE(on) and Energy per Pulse (EPULSE
for improved panel efficiency
)
TJ max
°C
High repetitive peak current capability
Lead Free package
Description
C
This IGBT is specifically designed for applications in
Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low VCE(on) and low
E
TM
EPULSE
rating per silicon area which improve panel
G
efficiency. Additional features are 150°C operating junction
temperature and high repetitive peak current capability.
These features combine to make this IGBT a highly
efficient, robust and reliable device for PDP applications.
D-Pak
G
C
E
Gate
Collector
Emitter
Ordering Information
Base part number
Package Type
Standard Pack
Form
Tube
Complete Part Number
Quantity
75
2000
3000
3000
IRG7RA13UPbF
D-Pak
IRG7RA13UPbF
IRG7RA13UTRPbF
IRG7RA13UTRLPbF
IRG7RA13UTRRPbF
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Absolute Maximum Ratings
Parameter
Gate-to-Emitter Voltage
Max.
Units
VGE
±30
40
V
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current
Power Dissipation
20
A
276
78
W
Power Dissipation
31
Linear Derating Factor
0.63
W/°C
TJ
Operating Junction and
-40 to + 150
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
°C
300
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
—
Max.
1.6
Units
RJC
RJA
°C/W
Junction-to-Ambient (PCB Mount)
50
1
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© 2012 International Rectifier
November 5th, 2012
IRG7RA13UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
Collector-to-Emitter Breakdown Voltage 360
Conditions
BVCES
–––
0.4
1.26
1.42
1.84
2.25
1.48
–––
-10
1.0
25
–––
–––
1.52
–––
–––
–––
–––
4.7
V
VGE = 0V, ICE = 250µA
Breakdown Voltage Temp. Coefficient
–––
–––
–––
V/°C Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 12A
BVCES/TJ
VGE = 15V, ICE = 20A
VCE(on)
Static Collector-to-Emitter Voltage
VGE = 15V, ICE = 40A
V
–––
–––
2.2
VGE = 15V, ICE = 60A
VGE = 15V, ICE = 20A, TJ = 150°C
VCE = VGE, ICE = 1.0mA
VGE(th)
Gate Threshold Voltage
V
Gate Threshold Voltage Coefficient
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
100
–––
––– mV/°C
10
VGE(th)/TJ
VCE = 360V, VGE = 0V
VCE = 360V, VGE = 0V, TJ = 125°C
VCE = 360V, VGE = 0V, TJ = 150°C
VGE = 30V
ICES
IGES
Collector-to-Emitter Leakage Current
150
–––
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA
75
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
–––
–––
47
nA
S
VGE = -30V
gfe
Qg
Qgc
td(on)
tr
VCE = 25V, ICE = 12A
33
VCE = 240V, IC = 12A, VGE = 15V
nC
12
11
IC = 12A, VCC = 196V
RG = 10, L=210µH
TJ = 25°C
13
ns
td(off)
tf
td(on)
tr
td(off)
tf
Turn-Off delay time
Fall time
75
120
11
Turn-On delay time
Rise time
IC = 12A, VCC = 196V
RG = 10, L=200µH, LS= 150nH
TJ = 150°C
14
ns
ns
µJ
Turn-Off delay time
Fall time
86
190
–––
480
tst
Shoot Through Blocking Time
V
CC = 240V, VGE = 15V, RG= 5.1
L = 220nH, C= 0.20µF, VGE = 15V
CC = 240V, RG= 5.1, TJ = 25°C
L = 220nH, C= 0.20µF, VGE = 15V
CC = 240V, RG= 5.1, TJ = 100°C
Class 1C
V
EPULSE
ESD
Energy per Pulse
–––
570
–––
V
Human Body Model
Machine Model
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
Cies
Coes
Cres
LC
Input Capacitance
–––
–––
–––
–––
880
47
–––
–––
–––
–––
VGE = 0V
Output Capacitance
VCE = 30V
pF
Reverse Transfer Capacitance
Internal Collector Inductance
26
ƒ = 1.0MHz
4.5
Between lead,
6mm (0.25in.)
from package
and center of die contact
nH
LE
Internal Emitter Inductance
–––
7.5
–––
Notes:
Half sine wave with duty cycle = 0.01, ton = 1.0µsec.
R is measured at TJ approximately 90°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint
and soldering techniques refer to application note #AN-994.
2
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© 2012 International Rectifier
November 5th, 2012
IRG7RA13UPbF
200
160
120
80
200
160
120
80
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
40
40
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 1. Typical Output Characteristics @ 25°C
Fig 2. Typical Output Characteristics @ 75°C
200
200
160
120
80
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
160
120
80
40
0
40
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
200
14
12
10
8
I
= 12A
C
160
120
T = 25°C
J
T = 150°C
J
T
T
= 25°C
J
J
6
= 150°C
80
40
0
4
2
0
0
5
10
15
20
2
4
6
8
10
12
14
16
V
(V)
V
(V)
GE
GE
Fig 6. VCE(ON) vs. Gate Voltage
November 5th, 2012
Fig 5. Typical Transfer Characteristics
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3
IRG7RA13UPbF
300
250
200
150
100
50
40
30
20
10
0
ton= 1µs
Duty cycle = 0.01
Half Sine Wave
0
25
50
75
100
(°C)
125
150
25
50
75
100
125
150
T
C
Case Temperature (°C)
Fig 7. Maximum Collector Current
Fig 8. Typical Repetitive Peak Current
vs. Case Temperature
vs. Case Temperature
1300
1200
1100
1000
900
1300
1200
1100
1000
900
V
= 240V
L = 220nH
C = 0.4µF
CC
L = 220nH
C = variable
100°C
100°C
25°C
25°C
800
700
800
600
700
500
400
600
160 170 180 190 200 210 220 230
195 200 205 210 215 220 225 230 235 240
I , Peak Collector Current (A)
C
V
Collector-to-Emitter Voltage (V)
CE,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs.
Collector-to-Emitter Voltage
1600
1400
1200
1000
800
100
10
1
V
= 240V
CC
C= 0.4µF
C= 0.3µF
L = 220nH
t = 1µs half sine
10µsec
100µsec
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
C= 0.2µF
125
600
0.1
400
1
10
100
1000
25
50
75
100
150
V
(V)
CE
T , Temperature (ºC)
J
Fig 12. Forward Bias Safe Operating Area
Fig 11. EPULSE vs. Temperature
4
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© 2012 International Rectifier
November 5th, 2012
IRG7RA13UPbF
10000
1000
100
20
16
12
8
I = 12A
D
V
V
V
= 240V
DS
DS
DS
= 150V
= 60V
Cies
4
Coes
Cres
0
10
0
10
20
30
40
0
100
200
Q
Total Gate Charge (nC)
G
V
(V)
CE
Fig 14. Typical Gate Charge
Fig 13. Typical Capacitance vs.
vs. Gate-to-Emitter Voltage
Collector-to-Emitter Voltage
10
1
D = 0.50
Ri(°C/W)
i (sec)
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
0.018744 0.000006
R4
0.1
0.05
J J
CC
0.575445 0.000170
0.02
0.01
1 1
2 2
3 3
4 4
0.687910 0.001311
Ci= iRi
Ci= iRi
0.01
0.314901 0.006923
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
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© 2012 International Rectifier
November 5th, 2012
IRG7RA13UPbF
A
RG
C
DRIVER
PULSE A
PULSE B
L
VCC
B
Ipulse
DUT
RG
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy
L
VCC
DUT
IC Current
0
1K
Fig 17. - Gate Charge Circuit (turn-off)
Fig 16c. EPULSE Test Waveforms
6
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© 2012 International Rectifier
November 5th, 2012
IRG7RA13UPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFR120
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 1234
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
DATE CODE
YEAR 1 = 2001
WEEK 16
IRFR120
116A
12
34
LINE A
Note: "P" in assembly line position
indicates "Lead-Free"
ASSEMBLY
LOT CODE
"P" in assembly line position indicates
"Lead-Free" qualification to the consumer-level
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
OR
IRFR120
12 34
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TO THE
CONSUMER LEVEL (OPTIONAL)
ASSEMBLY
LOT CODE
YEAR 1 = 2001
WEEK 16
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com © 2012 International Rectifier
7
November 5th, 2012
IRG7RA13UPbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
16.3 ( .641 )
15.7 ( .619 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Qualification information†
Industrial††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MSL1
Moisture Sensitivity Level
RoHS compliant
D-Pak
(per JEDEC J‐STD‐020D†††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/
††† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
Visit us at www.irf.com for sales contact information.
8
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© 2012 International Rectifier
November 5th, 2012
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