IRG7SC12FPBF [INFINEON]
Insulated Gate Bipolar Transistor,;
| 型号： | IRG7SC12FPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总10页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96363
IRG7SC12FPbF
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
VCES = 600V
• Low VCE (ON) Trench IGBT Technology
• Maximum Junction temperature 150 °C
• 3 μS short circuit SOA
IC = 8A, TC = 100°C
G
• SquareRBSOA
tSC ≥ 3μs, TJ(max) = 150°C
• Positive VCE (ON) Temperature co-efficient
• Tightparameterdistribution
• LeadFreePackage
E
VCE(on) typ. = 1.60V
n-channel
C
Benefits
E
G
• High Efficiency in a HVAC, Refrigerator applications
• RuggedtransientPerformanceforincreasedreliability
• ExcellentCurrentsharinginparalleloperation
• Low EMI
D2Pak
IRG7SC12FPbF
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
600
V
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
24
13
A
8
ICM
Pulse Collector Current
24
32
Clamped Inductive Load Current
Gate-to-Emitter Voltage
ILM
V
± 30
VGE
PD @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
69
W
PD @ TC = 100°C
28
TJ
-55 to +150
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
Thermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.50
40
Max.
1.8
Units
RθJC
RθCS
RθJA
°C/W
–––
–––
1
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03/25/11
IRG7SC12FPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Min.
600
—
Typ.
—
Max.
—
Units
V
Conditions
VGE = 0V, IC = 250μA
V(BR)CES
ΔV(BR)CES/ΔTJ
VGE = 0V, IC = 1mA (25°C-150°C)
Temperature Coeff. of Breakdown Voltage
0.58
1.60
1.60
—
—
V/°C
I
I
C = 8A, VGE = 15V, TJ = 25°C
C = 8A, VGE = 15V, TJ = 150°C
—
1.85
—
VCE(on)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
—
V
V
VGE(th)
V
V
CE = VGE, IC = 350μA
4.5
—
7.0
—
ΔVGE(th)/ΔTJ
CE = VGE, IC = 1.0mA (25°C - 150°C)
Threshold Voltage temp. coefficient
Forward Transconductance
-12
6.2
1.0
80
mV/°C
S
VCE = 50V, IC = 8A, PW = 60μs
GE = 0V, VCE = 600V
gfe
—
—
ICES
V
Collector-to-Emitter Leakage Current
—
20
μA
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ± 30V
—
—
IGES
Gate-to-Emitter Leakage Current
—
—
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
34
Max.
51
Units
Conditions
Qg
I
C = 8A
VGE = 15V
CC = 400V
IC = 8A, VCC = 400V, VGE = 15V
G = 47Ω, L = 1.0mH, LS = 150nH
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
6.2
16
9.3
24
nC
V
390
280
670
40
610
440
1050
60
R
μJ
TJ = 25°C
I
C = 8A, VCC = 400V, VGE = 15V
R
G = 47Ω, L = 1.0mH, LS = 150nH
20
40
ns
td(off)
tf
Turn-Off delay time
Fall time
210
120
515
570
1085
30
270
180
—
TJ = 25°C
Eon
Eoff
Etotal
td(on)
tr
IC = 8A, VCC = 400V, VGE = 15V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
RG = 47Ω, L=1.0mH, LS = 150nH
—
μJ
ns
pF
TJ = 150°C
—
I
C = 8A, VCC = 400V, VGE = 15V
—
RG = 47Ω, L = 1.0mH, LS = 150nH
20
—
td(off)
tf
Turn-Off delay time
Fall time
250
285
880
30
—
TJ = 150°C
—
Cies
Coes
Cres
V
V
GE = 0V
Input Capacitance
—
CC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
20
—
f = 1.0Mhz
TJ = 150°C, IC = 32A
V
CC = 480V, Vp 600V
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
Ω
Rg = 47 , VGE = +20V to 0V
VGE = 15V,VCC = 400V, Vp 600V
3
—
—
μs
Ω
Ω
Rg = 47 , Rshunt = 33m , VGE = +15V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, L = 1.0mH, RG = 47Ω.
Pulse width limited by max. junction temperature.
Rθ is measured at TJ of approximately 90°C.
2
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IRG7SC12FPbF
30
25
20
15
10
5
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
0
0
25
50
75
(°C)
100
125
150
0
25
50
75
(°C)
100
125
150
T
C
T
C
Fig. 2 - Power Dissipation vs. Case
Fig. 1 - Maximum DC Collector Current vs.
Temperature
Case Temperature
100
100
10μsec
100μsec
10
1
10
1msec
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
1
1
10
100
1000
10
100
(V)
1000
V
(V)
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
32
28
24
20
16
12
8
32
28
24
20
16
12
8
V
V
V
V
V
= 18V
GE
GE
GE
GE
GE
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
4
4
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 60μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 60μs
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3
IRG7SC12FPbF
32
28
24
20
16
12
8
5.5
4.5
3.5
2.5
1.5
0.5
I
I
I
= 4A
= 8A
= 16A
CE
CE
CE
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
4
0
0
2
4
6
8
10
6
8
10
12
V
14
16
18
20
(V)
V
(V)
GE
CE
Fig. 8 - Typical VCE vs. VGE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 60μs
TJ = -40°C
5.5
4.5
3.5
2.5
1.5
0.5
5.5
4.5
3.5
2.5
1.5
0.5
I
I
I
= 4A
= 8A
= 16A
I
I
I
= 4A
= 8A
= 16A
CE
CE
CE
CE
CE
CE
6
8
10
12
V
14
16
18
20
6
8
10
12
V
14
16
18
20
(V)
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 150°C
TJ = 25°C
35
30
25
20
15
10
5
1100
900
700
500
300
100
E
OFF
E
ON
T
= 150°C
J
T
= 25°C
J
0
4
6
8
10
12
0
4
8
12
16
20
V
Gate-to-Emitter Voltage (V)
GE,
I
(A)
C
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 1.0mH; VCE = 400V, RG = 47Ω; VGE = 15V
Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 60μs
4
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IRG7SC12FPbF
1000
900
800
700
600
500
400
300
1000
100
10
td
E
OFF
ON
E
OFF
t
F
td
ON
t
R
0
50
100
150
200
250
0
4
8
12
16
20
I
(A)
C
Rg (Ω)
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 1.0mH; VCE = 400V, ICE = 8A; VGE = 15V
Fig. 13 - Typ. Switching Time vs. IC
TJ = 150°C; L = 1.0mH; VCE = 400V, RG = 47Ω; VGE = 15V
1000
110
90
70
50
30
10
13
11
9
td
OFF
T
sc
I
sc
t
F
td
ON
100
7
t
R
5
10
3
0
50
100
150
(Ω)
200
250
8
10
12
14
(V)
16
18
R
V
G
GE
Fig. 16 - VGE vs. Short Circuit Time
Fig. 15 - Typ. Switching Time vs. RG
TJ = 150°C; L = 1mH; VCE = 400V, ICE = 8A; VGE = 15V
VCC = 400V; TC = 25°C
18
16
14
12
10
8
10000
V
V
= 400V
= 300V
CES
CES
1000
100
10
Cies
6
Coes
Cres
4
2
0
1
0
5
10
15
20
25
30
35
0
100
200
300
(V)
400
500
Q
, Total Gate Charge (nC)
V
G
CE
Fig. 17 - Typ. Capacitance vs. VCE
Fig. 18 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 8A; L = 2.4mH
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5
IRG7SC12FPbF
10
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.7348 0.000176
τ
0.02
0.01
J τJ
τ
τ
Cτ
τ
1τ1
τ
2 τ2
3τ3
0.7213 0.001639
0.3554 0.013407
0.01
0.001
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
6
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IRG7SC12FPbF
L
L
80 V
VCC
DUT
DUT
480V
0
Rg
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
SCSOA
4X
L
- 5V
DC
DUT
VCC
DUT /
DRIVER
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
I
CM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
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7
IRG7SC12FPbF
600
12
10
8
600
500
400
300
200
100
0
30
25
20
15
10
5
tf
tr
500
400
300
200
90% ICE
90% ICE
6
ICE
4
10% ICE
5% VCE
100
5% ICE
2
5% VCE
0
0
0
Eon Loss
Eoff Loss
-100
-5
-100
-2
-0.2
-0.1
0.0
0.1
0.2
0.3
-0.5 -0.2 0.1 0.4 0.7 1.0 1.3
time(μs)
time (μs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
500
400
300
200
100
0
250
200
150
100
50
VCE
IC
0
-100
-3.0
-50
0.0
3.0
6.0
Time (uS)
Fig. WF3 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
8
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IRG7SC12FPbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
PART NUMBER
LOT CODE 8024
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WE EK 02
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DAT E CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MB LY
LOT CODE
WEE K 02
A = AS S E MB L Y S IT E CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
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9
IRG7SC12FPbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101N. Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/2011
10
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