IRG7S319UPBF [INFINEON]
PDP TRENCH IGBT; PDP TRENCH IGBT
| 型号： | IRG7S319UPBF |
| 厂家： | 
Infineon |
| 描述： | PDP TRENCH IGBT |
| 文件： | 总8页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97155
IRG7S319UPbF
PDP TRENCH IGBT
Key Parameters
Features
VCE min
330
1.26
170
150
V
V
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
circuits in PDP applications
VCE(ON) typ. @ IC = 20A
IRP max @ TC= 25°C
TJ max
A
TM
l
Low VCE(on) and Energy per Pulse (EPULSE
for improved panel efficiency
)
°C
l
l
High repetitive peak current capability
Lead Free package
C
E
C
G
G
D2Pak
E
IRG7S319UPbF
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on)andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current
45
20
A
W
170
96
Power Dissipation
38
Power Dissipation
0.77
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
300
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.3
°C/W
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1
10/2/09
IRG7S319UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 250μA
Parameter
Collector-to-Emitter Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
330 ––– –––
BVCES
V
Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 20A
V
/ T
ΔΒ CES Δ
––– 0.38 ––– V/°C
––– 1.26 1.43
J
VGE = 15V, ICE = 25A
––– 1.34 –––
VGE = 15V, ICE = 45A
1.65 –––
––– 2.02 –––
––– 2.79 –––
––– 1.39 –––
V
VCE(on)
Static Collector-to-Emitter Voltage
VGE = 15V, ICE = 70A
VGE = 15V, ICE = 120A
VGE = 15V, ICE = 25A, TJ = 150°C
VCE = VGE, ICE = 1.3mA
VGE(th)
Gate Threshold Voltage
2.2
––– 4.7
V
V
/ T
Δ
GE(th) Δ
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
––– -8.8 ––– mV/°C
J
VCE = 330V, VGE = 0V
VCE = 330V, VGE = 0V, TJ = 125°C
VCE = 330V, VGE = 0V, TJ = 150°C
VGE = 30V
ICES
–––
1.0
50
20
μA
200
––– 125 –––
––– ––– 100
––– ––– -100
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
nA
VGE = -30V
VCE = 25V, ICE = 25A
gfe
Qg
Qgc
td(on)
tr
–––
–––
–––
–––
–––
–––
55
38
13
16
22
81
–––
–––
–––
–––
–––
–––
S
VCE = 200V, IC = 25A, VGE = 15V
nC
IC = 25A, VCC = 196V
R = 10 , L=200μH
ns
ns
Ω
G
td(off)
tf
td(on)
tr
td(off)
tf
TJ = 25°C
Turn-Off delay time
Fall time
––– 105 –––
IC = 25A, VCC = 196V
Turn-On delay time
Rise time
–––
–––
–––
16
25
95
–––
–––
–––
R = 10 , L=200μH
Ω
G
TJ = 150°C
Turn-Off delay time
Fall time
––– 203 –––
100 ––– –––
tst
VCC = 240V, VGE = 15V, RG= 5.1Ω
Shoot Through Blocking Time
ns
L = 220nH, C= 0.40μF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40μF, VGE = 15V
––– 854 –––
––– 1083 –––
EPULSE
Energy per Pulse
μJ
VCC = 240V, RG= 5.1Ω, TJ = 100°C
Class 1C
Human Body Model
Machine Model
(Per JEDEC standard JESD22-A114)
ESD
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
V
GE = 0V
Cies
Coes
Cres
LC
Input Capacitance
––– 1098 –––
VCE = 30V
Output Capacitance
–––
–––
–––
56
32
–––
–––
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Internal Collector Inductance
4.5 –––
Between lead,
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
7.5 –––
and center of die contact
Notes:
Half sine wave with duty cycle = 0.05, ton=2μsec.
R is measured at TJ of approximately 90°C.
θ
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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IRG7S319UPbF
200
160
120
80
200
160
120
80
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
40
40
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
200
200
160
160
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
120
80
40
0
120
80
40
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
200
10
I
= 25A
C
160
120
8
6
4
2
0
T
T
= 25°C
J
J
= 150°C
T
T
= 25°C
J
J
= 150°C
80
40
0
0
5
10
15
20
2
4
6
8
10
12
V
(V)
V
(V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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3
IRG7S319UPbF
200
160
120
80
50
40
30
20
10
0
ton= 2μs
Duty cycle = 0.05
Half Sine Wave
40
0
25
50
75
100
125
150
0
25
50
75
(°C)
100
125
150
Case Temperature (°C)
T
C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 7. Maximum Collector Current vs. Case Temperature
1100
1400
L = 220nH
C = 0.4μF
V
= 240V
CC
1300
1200
1100
1000
900
L = 220nH
C = variable
1000
900
800
700
600
500
100°C
100°C
25°C
25°C
800
700
200 210 220 230 240 250 260 270
Collector-to-Supply Voltage (V)
160 170 180 190 200 210 220 230
V
I , Peak Collector Current (A)
C
CC,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Supply Voltage
1200
100
V
= 240V
CC
L = 220nH
t = 1μs half sine
100 μs
10 μs
C= 0.4μF
C= 0.3μF
1000
800
600
400
10
1ms
1
C= 0.2μF
0.1
1
10
100
1000
25
50
75
100
125
150
V
(V)
CE
T , Temperature (ºC)
J
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
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IRG7S319UPbF
20
16
12
8
10000
1000
100
I
= 25A
D
V
V
V
= 240V
DS
= 200V
= 60V
DS
DS
Cies
4
Coes
Cres
0
10
0
10
20
30
40
0
100
(V)
200
Q
Total Gate Charge (nC)
G
V
CE
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
1
D = 0.50
0.20
0.10
0.1
R1
R1
R2
R2
R3
R3
τι (sec)
Ri (°C/W)
τ
J τJ
τ
τ
0.05
0.02
Cτ
0.459659 0.000349
0.55727 0.001537
0.283959 0.00944
τ
1τ1
τ
2τ2
3τ3
Ci= τi/Ri
Ci= τi/Ri
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRG7S319UPbF
A
RG
C
PULSE A
PULSE B
DRIVER
L
VCC
B
Ipulse
RG
DUT
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
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IRG7S319UPbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
PART NUMBER
LOT CODE 8024
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
F530S
DATE CODE
YEAR 0 = 2000
WE EK 02
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DAT E CODE
P = DE S IGNAT E S LE AD - F RE E
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MB LY
LOT CODE
WEE K 02
A = AS S E MB L Y S IT E CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRG7S319UPbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/2009
8
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