IRG8P08N120KDPBF [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
| 型号： | IRG8P08N120KDPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
| 文件： | 总13页 (文件大小：668K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG8B08N120KDPbF
IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 1200V
C
IC = 8A, TC =100°C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 5A
E
C
E
G
E
C
G
C
G
G
E
TO-247AD
IRG8P08N120KD-EPbF
TO-220AB
IRG8B08N120KDPbF
TO-247AC
IRG8P08N120KDPbF
Applications
n-channel
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
Gate
C
E
Collector
Emitter
Features
Benefits
Benchmark Low VCE(ON)
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
Environmentally friendly
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
IRG8B08N120KDPbF
TO-247AC
TO-247AD
TO-220AB
Tube
Tube
Tube
25
25
50
IRG8P08N120KDPbF
IRG8P08N120KD-EPbF
IRG8B08N120KDPbF
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Max.
1200
Units
V
VCES
IC @ TC = 25°C
IC @ TC = 100°C
15
8
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
ICM
ILM
15
20
11
6
±30
20
89
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
A
IF @ TC = 25°C
IF @ TC = 100°C
VGE
V
W
C
IFM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
36
-40 to +150
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
0.50
–––
0.24
–––
Max.
Units
Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
Thermal Resistance Junction-to-Case-(each IGBT) TO-247
Thermal Resistance Junction-to-Case-(each Diode) TO-247
Thermal Resistance, Case-to-Sink (flat, greased surface)TO-220AB
Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-220AB
Thermal Resistance, Case-to-Sink (flat, greased surface)TO-247
Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-247
1.3
2.6
1.4
2.6
–––
62
RJC (IGBT)
RJC (Diode)
RJC (IGBT)
RJC (Diode)
RCS
°C/W
RJA
–––
40
RCS
RJA
1
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
1200
—
—
1.2
—
—
V
VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
—
—
5.0
1.7
2.1
—
2.0
—
6.5
IC = 5A, VGE = 15V, TJ = 25°C
IC = 5A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 200µA
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
V
Gate Threshold Voltage
V
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-14
—
mV/°C VCE = VGE, IC = 200µA(25°C-150°C)
VGE(th)/TJ
gfe
—
—
—
—
—
—
2.9
1.0
1.0
—
2.3
2.5
—
35
—
±100
2.7
—
S
µA
V
V
CE = 50V, IC = 5A, PW = 20µs
GE = 0V, VCE = 1200V
ICES
IGES
VF
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
VGE = 0V, VCE = 1200V, TJ = 150°C
mA
nA VGE = ±30V
IF = 5A
IF = 5A, TJ = 150°C
V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
—
—
—
—
—
—
—
—
—
—
—
30
1.1
20
0.3
0.3
0.6
20
45
1.7
—
—
—
—
—
—
—
—
—
IC = 5A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
nC
mJ
VCC = 600V
IC = 5A, VCC = 600V, VGE=15V
RG = 47, TJ = 25°C
Energy losses include tail & diode
reverse recovery
20
ns
160
240
0.5
Eoff
Etotal
td(on)
tr
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
0.5
1.0
20
—
—
—
—
—
mJ
IC = 5A, VCC = 600V, VGE=15V
RG = 47, TJ = 150°C
Energy losses include tail & diode
reverse recovery
20
ns
td(off)
Turn-Off delay time
300
tf
Fall time
—
—
—
—
290
720
30
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0Mhz
15
TJ = 150°C, IC = 20A
VCC = 960V, Vp ≤ 1200V
VGE = +20V to 0V
FULL SQUARE
RBSOA
Reverse Bias Safe Operating Area
TJ = 150°C,VCC = 600V, Vp ≤ 1200V
VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
10
—
—
µs
TJ = 150°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
240
50
—
—
—
µJ
ns
A
VCC = 600V, IF = 5A
VGE = 15V, Rg = 47
Irr
Peak Reverse Recovery Current
11
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
16
14
12
10
8
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 36W
Square Wave:
VCC
6
4
I
Diode as specified
2
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
10
10µsec
10
1
100µsec
1msec
DC
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1000
10000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 3 - Reverse Bias SOA
Fig. 2 - Forward SOA
TJ = 150°C; VGE = 20V
TC = 25°C; TJ ≤ 150°C; VGE = 15V
100
100
10
1
10
Tc = -40°C
Tc = 25°C
Tc = 150°C
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
1.0
0.1
GE
GE
GE
GE
GE
0.1
0
2
4
6
8
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Saturation Voltage
Fig. 4 - Typ. IGBT Output Characteristics
VGE = 15V; tp = 20µs
TJ = 25°C; tp = 20µs
3
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
16
100
10
1
14
12
10
8
V
V
= 600V
= 400V
CES
CES
6
T = -40°C
J
4
T = 25°C
J
2
T = 150°C
J
0
0.1
0
5
10
15
20
25
30
35
4
6
8
10
12
14
16
Q
, Total Gate Charge (nC)
V
(V)
G
GE
Fig. 6 - Typ. Transfer Characteristics
Fig. 7 - Typical Gate Charge vs. VGE
VCE = 50V; tp = 20µs
ICE = 5A
1000
100
10
1.2
td
OFF
E
E
E
@ Tj = 150°C
OFF
@ Tj = 150°C
@ Tj = 150°C
1.0
0.8
0.6
0.4
0.2
0.0
ON
RR
t
F
E
E
E
@ Tj = 25°C
OFF
td
ON
@ Tj = 25°C
@ Tj = 25°C
ON
RR
t
R
1
0
2
4
6
8
10
1
2
3
4
5
I
6
7
8
9
10
I
(A)
C
(A)
C
Fig. 9 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 47; VGE = 15V
Fig. 8 - Typ. Energy Loss vs. IC
VCE = 600V, RG = 47; VGE = 15V
10000
1000
100
10
1.2
0.9
0.6
0.3
0.0
E
Tj = 150°C
ON @
@ Tj = 150°C
E
E
OFF
@ Tj = 150°C
RR
td
OFF
EON @ Tj = 25°C
EOFF @ Tj = 25°C
ERR @ Tj = 25°C
t
F
td
ON
t
R
1
40 60 80 100 120 140 160 180 200 220
40 60 80 100 120 140 160 180 200 220
R
( )
G
Rg ( )
Fig. 11 - Typ. Switching Time vs. RG
Fig. 10 - Typ. Energy Loss vs. RG
TJ = 150°C; VCE = 600V, ICE = 5A; VGE = 15V
VCE = 600V, ICE = 5A; VGE = 15V
4
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
500
11.0
10.5
10.0
9.5
V
= 600V
R = 47
CC
Tj = 150°C
G
R
= 47
G
R
= 100
= 148
= 220
G
400
300
200
100
0
V
= 15V
GE
= 5A
R
G
I
F
R
G
R
=
G
R
= 148
G
R
= 220
G
9.0
8.5
0
2
4
6
8
10
350
400
450
500
550
600
I
(A)
di /dt (A/µs)
F
F
Fig. 12 - Fig. 12 - Typ. IRR vs. di/dt
Fig. 13 - Typ. Diode ERR vs. IF
TJ = 150°C
100
10
1
-40°C
25°C
150°C
0.1
0.0
1.0
2.0
3.0
(V)
4.0
5.0
6.0
V
F
Fig. 14 - Typ. Diode Forward Voltage Drop
Characteristics
5
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
10
1
D = 0.50
0.20
0.05
Ri (°C/W)
0.12192
0.48468
0.51027
0.28298
i (sec)
0.000058
0.000092
0.001541
0.011665
R1
R1
R2
R2
R3
R3
R4
R4
0.1
0.10
J J
CC
1 1
0.02
0.01
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 15 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247
10
1
D = 0.50
0.20
0.10
Ri (°C/W)
0.07490
1.19683
0.93086
0.39894
i (sec)
0.000029
0.000184
0.002329
0.01613
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
0.1
J J
CC
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 16 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247
6
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
10
1
D = 0.50
0.20
Ri (°C/W)
0.03109
0.51536
0.50866
0.24474
i (sec)
0.000014
0.000089
0.001767
0.01039
0.05
0.10
R1
R1
R2
R2
R3
R3
R4
R4
0.1
J J
CC
1 1
2 2
0.02
0.01
3 3
4 4
Ci= iRi
Ci= iRi
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 17 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-220AB
10
1
D = 0.50
0.20
0.10
Ri (°C/W)
0.03331
1.22958
0.94175
0.39481
i (sec)
0.000013
0.000240
0.002513
0.015930
0.05
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
0.1
J J
CC
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 18 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-220AB
7
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
Rg
DUT /
DRIVER
VCC
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
(Board Stray Inductance 180nH)
C force
100K
D1 22K
DUT
C sense
G force
0.0075µF
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
8
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
800
700
600
500
400
300
200
100
0
40
VCE
35
30
25
20
15
10
5
ICE
0
-100
-5
-10.0 -5.0 0.0 5.0 10.0 15.0 20.0
Time (uS)
Fig. WF1 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
9
www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E X A M P L E :
T H IS IS A N IR F 1 0 1 0
L O C O D E 1 7 8 9
A S S E M B L E D
IN T H A S S E M B L Y L IN
P A R T N U M B E R
D A T E C O D E
T
IN T E R N A T IO
R E C T IF IE R
L O
N A L
O
N
W
W
1 9 , 2 0 0 0
"C "
G
O
E
E
Y E A R
E E K 1 9
L IN
0
=
2 0 0 0
N
o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d F r e e "
A S S E M B L Y
L O C O D E
W
-
T
E
C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10 www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
D A T E C O D E
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
L O T C O D E 5 6 5 7
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
Y E A R
W E E K 3 5
L IN E
0
=
2 0 0 0
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12 www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF
Qualification Information†
Qualification Level
Industrial†
(per JEDEC JESD47F) ††
TO-220
TO-247AC
TO-247AD
N/A
Moisture Sensitivity Level
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
12/12/2014
Added TO-220 package in the datasheet.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
13 www.irf.com
© 2014 International Rectifier
Submit Datasheet Feedback
December 12, 2014
相关型号：
©2020 ICPDF网 联系我们和版权申明