IRGBC20UD2 [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.5A); 超快软恢复二极管（ VCES = 600V ， VGE @ = 15V ， IC = 6.5A ），绝缘栅双极晶体管
| 型号： | IRGBC20UD2 |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.5A) |
| 文件： | 总8页 (文件大小：393K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.790
IRGBC20UD2
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
Features
C
VCES = 600V
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
V
CE(sat) ≤ 3.0V
G
@VGE = 15V, IC = 6.5A
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's well
known IGBT line. They provide the convenience of an IGBT and an ultrafast
recovery diode in one package, resulting in substantial benefits to a host of
high-voltage, high-current, motor control, UPS and power supply applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
13
IC @ TC = 100°C
6.5
ICM
52
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
52
IF @ TC = 100°C
7.0
IFM
52
± 20
VGE
V
PD @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
60
W
PD @ TC = 100°C
24
TJ
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
—
Typ.
—
Max.
2.1
3.5
—
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
—
°C/W
—
0.50
—
—
80
—
2 (0.07)
—
g (oz)
Revision 1
C-693
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IRGBC20UD2
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
V
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
0.69
V/°C VGE = 0V, IC = 1.0mA
IC = 6.5A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
2.2 3.0
VGE = 15V
—
2.8
2.5
—
—
—
V
IC = 13A
See Fig. 2, 5
—
IC = 6.5A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
-11
4.3
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
1.4
—
—
S
VCE = 100V, IC = 6.5A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
250
1700
µA
—
—
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
—
1.4 1.7
1.3 1.6
V
IC = 8.0A
See Fig. 13
—
IC = 8.0A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
—
±100 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
16 22
2.5 3.8
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
IC = 6.5A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
See Fig. 8
TJ = 25°C
7.8
60
29
13
—
—
IC = 6.5A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
130 200
65 120
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
Eon
Eoff
Ets
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.21
0.22
—
—
mJ
ns
0.43 0.65
60
30
—
—
—
—
—
—
—
—
—
55
90
TJ = 150°C,
See Fig. 9, 10, 11, 18
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
td(off)
tf
Turn-Off Delay Time
Fall Time
210
180
0.71
7.5
330
65
Ets
LE
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
6.0
37
ƒ = 1.0MHz
TJ = 25°C See Fig.
55
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 8.0A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
3.5 5.0
4.5 8.0
65 138
124 360
V R = 200V
Qrr
nC
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
240
210
—
—
Notes:
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 50Ω, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-694
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IRGBC20UD2
10
8
Duty cycle: 50%
T
T
= 125°C
J
= 90°C
sink
Ga te drive as specified
Turn-on losses include
effects of reverse recovery
Power Dissipation = 13W
6
60 % of rated
volta ge
4
2
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
T
= 25°C
J
T
= 150°C
J
10
T
= 150°C
J
10
T
J
= 25°C
1
V
= 100V
V
= 15V
CC
G E
20µs P ULSE W IDTH
5µs P ULSE W IDTH
0.1
1
5
10
15 20
1
10
V
, G ate-to-E m itter Voltage (V )
VCE , Collector-to-Emitter Voltage (V)
G E
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-695
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IRGBC20UD2
14
12
10
8
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
= 15V
V
= 15V
G E
G E
80µs PULSE W IDTH
I
= 13A
C
I
= 6.5A
= 3.3A
C
C
6
I
4
2
0
-60 -40 -20
0
20
40
60
80 100 120 140 160
25
50
75
100
125
150
T
, Case Temperature (°C)
T
C
, Case Temperature (°C)
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
t
(THERMAL RESPONSE)
2
Notes:
1. D uty factor D
=
t
/ t
1
2
2. P eak T = P
x Z
+ T
C
DM
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-696
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IRGBC20UD2
700
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
GE
ies
V
I
= 400V
= 6.5A
CE
C
= C + C
,
C
ce
SHORTED
ge
gc
= C
600
500
400
300
200
100
0
res
oes
gc
= C + C
ce
gc
C
ies
C
oes
4
C
res
0
1
10
100
0
4
8
12
16
20
VCE , Collector-to-Emitter Voltage (V)
Q
, Total G ate Charge (nC )
g
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
0.44
0.43
0.42
0.41
10
VCC = 480V
VGE = 15V
TC = 25°C
IC = 6.5A
Ω
RG = 50
VGE = 15V
VCC = 480V
IC = 13A
1
IC = 6.5A
IC = 3.3A
A
A
0.1
0
10
20
30
40
50
60
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Case Temperature (°C)
Ω
R , Gate Resistance ( )
G
C
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-697
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IRGBC20UD2
2.0
1000
100
10
Ω
RG = 50
V
T
= 20V
= 125°C
G E
J
TC = 150°C
VCC = 480V
VGE = 15V
1.6
1.2
0.8
0.4
0.0
SA FE OP ERATING AREA
1
A
0.1
0
3
6
9
12
15
1
10
100
1000
V
, C olle ctor-to-E m itter V oltage (V )
I
, Collector-to-Emitter Current (A)
C
CE
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
10
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-698
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IRGBC20UD2
100
10
1
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
80
60
40
I
F
= 16A
I
= 8.0A
F
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
I
= 4.0A
F
20
0
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
300
I
= 4.0A
= 8.0A
F
I
= 16A
F
1000
I
F
200
100
0
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-699
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IRGBC20UD2
90% Vge
+Vge
Same type
device as
D.U.T.
Vce
90% Ic
10% Vce
Ic
430µF
80%
Ic
of Vce
D.U.T.
5% Ic
td(off)
tf
t1+5µS
Eoff = Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t2
t4
Erec = Vd id dt
t3
t1
DIODE REVERSE
t1
RECOVERY ENERGY
t3
t4
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 1 - JEDEC Outline TO-220AB
Section D - page D-12
C-700
To Order
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