IRGC5B60KB [INFINEON]
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 150 MM, WAFER;
| 型号： | IRGC5B60KB |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, 150 MM, WAFER 电动机控制 栅 晶体管 |
| 文件： | 总1页 (文件大小：14K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94408
IRGC5B60KB
Die in Wafer Form
600V
Features
C
• GEN5 Non Punch Through (NPT) Technology
• Low VCE(on)
IC(nom)= 5A
VCE(on) typ.=1.8V @
IC(nom) @ 25°C
MotorControlIGBT
Short Circuit Rated
150mm Wafer
• 10µs Short Circuit Capability
• Square RBSOA
• Positive VCE(on) Temperature Coefficient
G
Benefits
• Benchmark Efficiency for Motor Control Applications
• Rugged Transient Performance
E
• Excellent Current Sharing in Parallel Operation
• Qualified for Industrial Market
Reference Standard IR Package Part: IRGS5B60KD
Electrical Characteristics (Wafer Form)
Parameter
VCE (on)
V(BR)CES
VGE(th)
ICES
Description
Guaranteed (min, max)
1.0V min, 1.25V max
600V min
TestConditions
IC = 1A, TJ = 25°C, VGE = 15V
TJ = 25°C, ICES = 1mA, VGE = 0V
VGE = VCE , TJ =25°C, IC = 250µA
TJ = 25°C, VCE = 600V
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
3.5V min, 5.5V max
10µA max
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
IGES
± 1.1µA max
TJ = 25°C, VGE = +/-20V
Mechanical Data
Nominal Backmetal Composition, (Thickness)
Nominal Front Metal Composition, (Thickness)
Dimensions
Al - Ti - Ni/V - Ag, (1kA - 1kA - 4kA - 6kA)
99% Al/1% Si, (4µm)
0.090" x 0.115"
Wafer Diameter
150mm, with std. < 100 > flat
85µm, +/- 7µm
Wafer Thickness, Tolerance
Relevant Die Mechanical Dwg. Number
Minimum Street Width
01-5513
100µm
Reject Ink Dot Size
0.25mm diameter minimum
Consistent throughout same wafer lot
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300°C
Ink Dot Location
Recommended Storage Environment
Recommended Die Attach Conditions
Die Outline
2.29
[.090]
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
2. CONTROLLING DIMENSION: [INCH].
3. LETTER DESIGNATION:
1.30
[.051]
S = SOURCE
G = GAT E
SK = SOURCE KELVIN
IS = CURRENTSENSE
E = EMITTER
4. DIMENSIONAL TOLERANCES:
BONDING PADS: < 0.635 TOLERANCE
=
+ /- 0.013
< [.0250] TOLERANCE = + /- [.0005]
> 0.635 TOLERANCE + /- 0.025
EMITTER
WIDT H
&
1.88 2.92
[.074][.115]
=
LENGTH
> [.0250] TOLERANCE = + /- [.0010]
0.64
[.025]
GAT E
OVERALL DIE:
WIDTH
< 1.270 TOLERANCE = + /- 0.102
< [.050] TOLERANCE = + /- [.004]
> 1.270 TOLERANCE = + /- 0.203
> [.050] TOLERANCE = + /- [.008]
&
0.66
[.026]
LENGTH
www.irf.com
04/19/02
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