IRGIB7B60KD [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGIB7B60KD |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总12页 (文件大小：436K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94620B
IRGIB7B60KD
VCES = 600V
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
IC = 8.0A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.8V
• 10µs Short Circuit Capability.
G
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220AB
FullPak
Absolute Maximum Ratings
Parameter
Max.
600
12
Units
Collector-to-Emitter Voltage
V
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
Continuous Collector Current
Continuous Collector Current
8.0
A
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
RMS Isolation Voltage, Terminal to Case, t=1 min.
Gate-to-Emitter Voltage
24
24
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
9.0
6.0
18
2500
±20
39
V
VISOL
VGE
Maximum Power Dissipation
W
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation
20
Operating Junction and
-55 to +175
TJ
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
3.8
Units
Junction-to-Case- IGBT
Rθ
JC
RθJC
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
6.0
°C/W
–––
62
Rθ
CS
RθJA
Wt
–––
g
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1
09/17/03
IRGIB7B60KD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES
VGE = 0V, IC = 500µA
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
3.5
—
—
—
—
—
—
—
—
—
—
0.57
1.8
2.2
2.3
4.5
-9.5
3.7
1.0
200
—
V
∆
∆
V(BR)CES/ TJ
VCE(on)
VGE(th)
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 8.0A, VGE = 15V, TJ = 25°C
IC = 8.0A, VGE = 15V, TJ = 150°C
IC = 8.0A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 250µA
Temperature Coeff. of Breakdown Voltage
—
V/°C
2.2
2.5
2.5
5.5
—
5,6,7
Collector-to-Emitter Voltage
V
9,10,11
Gate Threshold Voltage
V
mV/°C
S
9,10,11
12
∆
V
∆
GE(th)/ TJ
VCE = VGE, IC = 1mA (25°C-150°C)
Threshold Voltage temp. coefficient
Forward Transconductance
VCE = 50V, IC = 8.0A, PW = 80µs
VGE = 0V, VCE = 600V
gfe
—
150
500
ICES
VFM
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 5.0A, VGE = 0V
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
µA
V
720 1100
1.25 1.45
1.20 1.40
1.20 1.30
8
IF = 5.0A, TJ = 150°C, VGE = 0V
IF = 5.0A, TJ = 175°C, VGE = 0V
VGE = ±20V, VCE = 0V
IGES
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min. Typ. Max. Units
Conditions
Ref.Fig.
23
Qg
IC = 8.0A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
29
3.7
14
44
5.6
21
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
VCC = 400V
VGE = 15V
nC
µJ
ns
CT1
IC = 8.0A, VCC = 400V
GE = 15V, RG = 50Ω, L = 1.1mH
TJ = 25°C
C = 8.0A, VCC = 400V
160
160
320
23
268
268
433
27
CT4
CT4
V
I
Ω
VGE = 15V, RG = 50 , L = 1.1mH
Rise time
22
26
td(off)
tf
TJ = 25°C
Turn-Off delay time
140
32
150
42
Fall time
Eon
Eoff
Etot
td(on)
tr
IC = 8.0A, VCC = 400V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
220
270
490
22
330
381
711
27
CT4
13,15
WF1,WF2
14,16
CT4
Ω
VGE = 15V, RG = 50 , L = 1.1mH
µJ
ns
TJ = 150°C
IC = 8.0A, VCC = 400V
V
GE = 15V, RG = 50Ω, L = 1.1mH
Rise time
21
25
td(off)
tf
TJ = 150°C
Turn-Off delay time
180
40
198
56
WF1
Fall time
WF2
LE
Internal Emitter Inductance
Input Capacitance
7.5
440
38
—
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
RBSOA
660
57
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
pF
22
16
24
f = 1.0MHz
TJ = 150°C, IC = 54A, Vp = 600V
VCC=500V,VGE = +15V to 0V,RG = 50Ω
FULL SQUARE
4
CT2
Ω
TJ = 150°C, Vp = 600V, RG = 100
SCSOA
Short Circuit Safe Operating Area
10
—
—
µs
CT3
VCC=360V,VGE = +15V to 0V
WF4
ISC (Peak)
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
—
—
70
100
95
—
A
µJ
ns
A
WF4
Erec
TJ = 150°C
133
120
17
17,18,19
20,21
CT4,WF3
trr
VCC = 400V, IF = 8.0A, L = 1.07mH
Ω
VGE = 15V, RG = 50
Irr
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
13
Qrr
620
800
nC di/dt = 500A/µS
Note to
are on page 12
2
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IRGIB7B60KD
14
12
10
8
50
40
30
20
10
0
6
4
2
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
T
(°C)
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
10
1
100
100 µs
10
1ms
1
10ms
0.1
DC
0
0.01
10
100
(V)
1000
1
10
100
(V)
1000
10000
V
CE
V
CE
Fig. 4 - Reverse Bias SOA
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
TJ = 150°C; VGE =15V
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3
IRGIB7B60KD
40
40
35
30
25
20
15
10
5
V
= 18V
GE
35
30
25
20
15
10
5
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
30
40
35
30
-40°C
25°C
150°C
25
20
15
10
5
V
= 18V
GE
25
20
15
10
5
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0.0
0.5
1.0
(V)
1.5
2.0
0
1
2
3
4
5
6
V
V
(V)
F
CE
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
tp = 80µs
TJ = 150°C; tp = 80µs
4
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IRGIB7B60KD
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
20
18
16
14
12
10
8
100
80
60
40
20
0
T
= 25°C
J
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
T
= 150°C
J
6
T
= 150°C
J
4
T
J
= 25°C
15
2
0
5
10
15
20
0
5
10
20
V
(V)
V
(V)
GE
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 12 - Typ. Transfer Characteristics
TJ = 150°C
VCE = 360V; tp = 10µs
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5
IRGIB7B60KD
600
500
1000
100
10
td
OFF
400
E
OFF
300
200
100
0
t
F
E
ON
td
ON
t
R
0
5
10
(A)
15
20
0
5
10
(A)
15
20
I
I
C
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.1mH; VCE= 400V,
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.1mH; VCE= 400V
RG= 50Ω; VGE= 15V
RG= 50Ω; VGE= 15V
700
600
500
400
300
200
100
0
10000
E
ON
E
1000
100
10
OFF
td
OFF
td
ON
t
F
t
R
0
100
200
300
)
400
500
0
100
200
300
)
400
500
R
(
Ω
R
(
Ω
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.1mH; VCE= 400V
ICE= 8.0A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.1mH; VCE= 400V
ICE= 8.0A; VGE= 15V
6
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IRGIB7B60KD
16
14
12
10
8
20
18
16
14
12
10
8
R
R
50 Ω
G =
150
270
Ω
Ω
G =
R
G =
6
6
R
470
Ω
4
G =
4
2
2
0
0
0
5
10
(A)
15
20
0
100
200
300
400
500
I
R
(
Ω)
F
G
Fig. 18 - Typical Diode IRR vs. RG
Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C; IF = 8.0A
TJ = 150°C
16
14
12
10
8
1500
50Ω
16A
150Ω
1000
500
0
270Ω
470
Ω
8.0A
6
4.0A
4
2
0
0
100 200 300 400 500 600 700
0
100
200
300
400
500
600
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
IF= 8.0A; TJ = 150°C
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7
IRGIB7B60KD
250
200
150
100
50
470Ω
270Ω
150 Ω
50
Ω
0
0
5
10
(A)
15
20
I
F
Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
1000
Cies
16
14
12
10
8
300V
Coes
100
Cres
400V
6
10
4
2
1
0
0
20
40
60
(V)
80
100
0
5
10
15
20
25
30
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 23 - Typical Gate Charge vs. VGE
Fig. 22- Typ. Capacitance vs. VCE
ICE = 8.0A; L = 600µH
VGE= 0V; f = 1MHz
8
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IRGIB7B60KD
10
1
D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
Ri (°C/W) τi (sec)
0.05
R4
0.367
0.425
1.070
1.928
0.000164
0.000652
0.081521
2.124500
τ
τ
J τJ
τ
0.1
0.01
0.02
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
1E+1
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
2.530
1.354
2.114
0.001
0.02
0.01
Cτ
0.1
τ
1τ1
τ3
2 τ2
0.068689
2.758
τ3
Ci= τi/Ri
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRGIB7B60KD
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
ICM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
10
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IRGIB7B60KD
600
500
400
300
200
100
0
12
10
8
600
500
400
300
200
100
0
24
20
tf
Vce
tr
Vce
Ice
16
12
8
90% Ice
5% Vce
90% Ice
10% Ice
6
4
5% Ice
Ice
2
4
5% Vce
0
Eoff Loss
0
-100
-200
-2
-4
Eon
Loss
-100
-4
0.3
0.5
0.7
Time (uS)
0.9
0
0.2
0.4
0.6
0.8
1
Time (uS)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
100
0
15
400
350
300
250
200
150
100
50
80
60
40
20
0
QRR
10
5
tRR
-100
-200
-300
-400
-500
-600
0
-5
10%
Peak
IRR
Peak
IRR
-10
-15
-20
0
0.00
10.00
20.00
30.00
40.00
50.00
-0.15
-0.05
0.05
0.15
0.25
Time (uS)
time (µS)
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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11
IRGIB7B60KD
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001 in
Notes: This part marking information applies to all devices producedbefore 02/26/2001
andcurrently for parts manufactured in GB.
location other than GB.
EXAMPLE: THIS IS AN IRFI840G
WITH ASSEMBLY
EXAMPLE: THIS IS AN IRFI840G
WIT H AS S EMB LY
PART NUMBER
LOT CODE 3432
ASSEMBLED ON WW 24 1999
IN THE ASSEMBLY LINE "K"
PART NUMBER
LOT CODE E401
INT ERNATIONAL
RECTIFIER
LOGO
IRFI840G
924K
INTERNATIONAL
RECTIFIER
LOGO
IRFI840G
34
32
DATE CODE
YEAR 9 = 1999
WEEK 24
E401 9245
AS S E MBL Y
LOT CODE
DATE CODE
(YYWW)
AS S E MBL Y
LOT CODE
LINE K
YY = YEAR
WW = WE EK
Notes:
VCC = 80% (VCES), VGE = 15V, L = 100µH, RG = 50Ω.
Energy losses include "tail" and diode reverse recovery.
TO-220AB FullPak package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/03
12
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