IRGP4062DPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGP4062DPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总12页 (文件大小：954K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97190
IRGB4062DPbF
IRGP4062DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
C
VCES = 600V
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
IC = 24A, TC = 100°C
• SquareRBSOA
G
tSC ≥ 5µs, TJ(max) = 175°C
• 100% of the parts tested for 4X rated current (ILM
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tightparameterdistribution
)
E
VCE(on) typ. = 1.65V
n-channel
• LeadFreePackage
C
C
Benefits
• High Efficiency in a wide range of applications
E
C
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• RuggedtransientPerformanceforincreasedreliability
• ExcellentCurrentsharinginparalleloperation
• Low EMI
E
C
G
G
TO-220AB
TO-247AC
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
600
48
Units
V
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
IC @ TC = 100°C
24
ICM
96
Clamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
ILM
96
A
IF @ TC = 25°C
48
IF @ TC = 100°C
24
IFM
96
VGE
±20
±30
250
125
V
PD @ TC = 25°C
W
PD @ TC = 100°C
TJ
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
–––
0.50
80
Max.
0.60
1.53
0.65
1.62
–––
Units
RθJC (IGBT)
RθJC (Diode)
RθJC (IGBT)
RθJC (Diode)
RθCS
Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB
Thermal Resistance Junction-to-Case-(each Diode) TO-220AB
Thermal Resistance Junction-to-Case-(each IGBT) TO-247AC
Thermal Resistance Junction-to-Case-(each Diode) TO-247AC
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
°C/W
RθJA
–––
1
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02/24/06
IRGB/P4062DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
CT6
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units
Conditions
GE = 0V, IC = 100µA
V(BR)CES
V
V
600
—
—
—
—
4.0
—
—
—
—
—
—
—
—
0.30
1.60
2.03
2.04
—
—
V
∆V(BR)CES/∆TJ
GE = 0V, IC = 1mA (25°C-175°C)
CT6
Temperature Coeff. of Breakdown Voltage
—
V/°C
IC = 24A, VGE = 15V, TJ = 25°C
C = 24A, VGE = 15V, TJ = 150°C
IC = 24A, VGE = 15V, TJ = 175°C
5,6,7
1.95
—
VCE(on)
VGE(th)
I
Collector-to-Emitter Saturation Voltage
V
9,10,11
—
V
V
V
V
V
CE = VGE, IC = 700µA
Gate Threshold Voltage
6.5
—
V
mV/°C
S
9, 10,
∆
∆
VGE(th)/ TJ
CE = VGE, IC = 1.0mA (25°C - 175°C)
CE = 50V, IC = 24A, PW = 80µs
GE = 0V, VCE = 600V
11, 12
Threshold Voltage temp. coefficient
Forward Transconductance
-18
17
gfe
—
ICES
Collector-to-Emitter Leakage Current
2.0
25
µA
GE = 0V, VCE = 600V, TJ = 175°C
775
1.80
1.28
—
—
VFM
IGES
IF = 24A
8
Diode Forward Voltage Drop
2.6
—
V
IF = 24A, TJ = 175°C
VGE = ±20V
Gate-to-Emitter Leakage Current
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
24
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
IC = 24A
GE = 15V
VCC = 400V
C = 24A, VCC = 400V, VGE = 15V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
50
75
20
31
201
700
901
53
31
115
41
—
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
V
CT1
13
nC
µJ
ns
21
I
CT4
CT4
115
600
715
41
RG = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 24A, VCC = 400V, VGE = 15V
Ω
G = 10 , L = 200µH, LS = 150nH, TJ = 25°C
R
22
td(off)
tf
Turn-Off delay time
Fall time
104
29
Eon
Eoff
Etotal
td(on)
tr
IC = 24A, VCC = 400V, VGE=15V
13, 15
CT4
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
420
840
1260
40
Ω
RG=10 , L=100µH, LS=150nH, TJ = 175°C
—
µJ
ns
pF
Energy losses include tail & diode reverse recovery
WF1, WF2
14, 16
CT4
—
I
C = 24A, VCC = 400V, VGE = 15V
—
RG = 10Ω, L = 200µH, LS = 150nH
24
—
td(off)
tf
TJ = 175°C
WF1
Turn-Off delay time
Fall time
125
39
—
WF2
—
Cies
Coes
Cres
V
GE = 0V
23
Input Capacitance
1490
129
45
—
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
—
f = 1.0Mhz
TJ = 175°C, IC = 96A
4
V
CC = 480V, Vp =600V
Rg = 10Ω, VGE = +15V to 0V
CC = 400V, Vp =600V
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
CT2
V
22, CT3
WF4
5
—
—
µs
Rg = 10Ω, VGE = +15V to 0V
TJ = 175°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
621
89
—
—
—
µJ
ns
A
17, 18, 19
20, 21
WF3
VCC = 400V, IF = 24A
Ω
VGE = 15V, Rg = 10 , L =200µH, Ls = 150nH
Irr
Peak Reverse Recovery Current
37
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 10Ω.
This is only applied to TO-220AB package.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
2
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IRGB/P4062DPbF
50
45
40
35
30
25
20
15
10
5
300
250
200
150
100
50
0
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
T
(°C)
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1000
1000
100
100
10
1
10µsec
10
100µsec
1
1msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
(V)
1000
10000
10
100
(V)
1000
V
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
V
= 18V
GE
V
= 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
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3
IRGB/P4062DPbF
90
120
100
80
60
40
20
0
V
= 18V
GE
80
70
60
50
40
30
20
10
0
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
-40°c
25°C
175°C
0
1
2
3
4
5
6
7
8
0.0
1.0
2.0
3.0
V
(V)
F
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 8 - Typ. Diode Forward Characteristics
TJ = 175°C; tp = 80µs
tp = 80µs
20
18
16
14
12
20
18
16
14
12
I
I
I
= 12A
= 24A
= 48A
I
I
I
= 12A
= 24A
= 48A
CE
CE
CE
CE
CE
CE
10
8
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
120
100
80
60
40
20
0
20
18
16
14
12
10
8
T
= 25°C
J
T = 175°C
J
I
I
I
= 12A
CE
CE
CE
= 24A
= 48A
6
4
2
0
0
5
10
15
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 12 - Typ. Transfer Characteristics
CE = 50V; tp = 10µs
TJ = 175°C
V
4
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IRGB/P4062DPbF
1800
1600
1400
1200
1000
800
600
400
200
0
1000
100
10
td
OFF
E
OFF
td
ON
t
F
E
ON
t
R
1
0
10
20
30
(A)
40
50
60
10
20
30
(A)
40
50
I
C
I
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
1600
1000
1400
E
OFF
1200
1000
td
OFF
E
ON
800
100
td
ON
600
400
200
0
t
F
t
R
10
0
25
50
75
100
125
0
25
50
75
(Ω)
100
125
R
G
Rg (Ω)
Fig. 16 - Typ. Switching Time vs. RG
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
40
45
R
10Ω
G =
40
35
30
25
20
15
10
5
35
30
25
20
15
10
Ω
R
22
G =
G =
R
R
47Ω
100Ω
G =
0
10
20
30
40
50
60
0
25
50
75
(Ω)
100
125
I
(A)
R
F
G
Fig. 17 - Typ. Diode IRR vs. IF
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
TJ = 175°C
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5
IRGB/P4062DPbF
45
40
35
30
25
20
15
10
5
4000
3500
3000
2500
2000
1500
1000
500
24A
Ω
10
Ω
22
Ω
47
12A
Ω
100
6.0A
0
500
1000
1500
0
500
1000
1500
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typ. Diode QRR vs. diF/dt
CC = 400V; VGE = 15V; TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
V
280
16
14
12
10
8
1000
800
240
200
160
120
80
R
= 47Ω
G
R
= 10Ω
G
600
400
200
0
R
= 22Ω
G
R
= 100Ω
G
6
40
4
0
10
20
30
(A)
40
50
60
8
10
12
14
(V)
16
18
I
V
GE
F
Fig. 22 - VGE vs. Short Circuit Time
Fig. 21 - Typ. Diode ERR vs. IF
VCC = 400V; TC = 25°C
TJ = 175°C
10000
1000
100
16
14
12
10
8
V
V
= 300V
= 400V
CES
CES
Cies
6
Coes
Cres
4
2
10
0
0
20
40
60
(V)
80
100
0
5
10 15 20 25 30 35 40 45 50 55
, Total Gate Charge (nC)
V
Q
CE
G
Fig. 24 - Typical Gate Charge vs. VGE
Fig. 23 - Typ. Capacitance vs. VCE
ICE = 24A; L = 600µH
VGE= 0V; f = 1MHz
6
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IRGB/P4062DPbF
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.2329 0.000234
τ
0.02
0.01
J τJ
τ
τ
Cτ
0.01
τ
1 τ1
Ci= τi/Ri
2τ2
0.3631 0.007009
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-220AB
10
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.02
0.01
τ
J τJ
τ
τ
Cτ
0.476
0.647
0.406
0.000763
0.003028
0.023686
τ
1τ1
τ
2 τ2
3τ3
0.01
Ci= τi/Ri
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-220AB
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7
IRGB/P4062DPbF
1
D = 0.50
0.20
0.1
0.10
R1
R1
R2
R2
Ri (°C/W) τi (sec)
0.2782 0.000311
0.3715 0.006347
0.05
τ
J τJ
τ
τ
Cτ
1 τ1
Ci= τi/Ri
τ
2τ2
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247AC
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.02
0.01
τ
J τJ
τ
τ
Cτ
0.693
0.621
0.307
0.001222
0.005254
0.038140
0.01
0.001
0.0001
τ
1τ1
τ
2 τ2
3τ3
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247AC
8
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IRGB/P4062DPbF
L
L
80 V
VCC
DUT
DUT
480V
0
Rg
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4x
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
C force
400µH
R =
ICM
D1
10K
C sense
DUT
VCC
G force
DUT
0.0075µ
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
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9
IRGB/P4062DPbF
500
400
25
20
15
10
5
500
400
300
200
100
0
50
40
30
20
10
0
tr
300
tf
TEST
90% ICE
200
90% test
5% ICE
100
10% test
5% VCE
5% VCE
0
0
EOFF Loss
EON
-100
-5
-100
-10
-0.50 0.00 0.50 1.00 1.50 2.00
Time(µs)
11.70 11.80 11.90 12.00 12.10
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
25
500
400
300
200
100
0
250
200
150
100
50
20
QRR
15
tRR
10
VCE
5
0
ICE
-5
-10
-15
-20
-25
10%
Peak
IRR
Peak
IRR
0
-100
-50
-0.05
0.05
0.15
-5.00
0.00
5.00
10.00
time (µS)
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
@ TJ = 175°C using Fig. CT.4
10
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IRGB/P4062DPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
TO-220AB package is not recommended for Surface Mount Application.
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11
IRGB/P4062DPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/06
12
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相关型号：
IRGP4066DPBF
Insulated Gate Bipolar Transistor, 140A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
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