IRGP4066D-EPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRGP4066D-EPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总11页 (文件大小：322K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97576
IRGP4066DPbF
IRGP4066D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
C
VCES = 600V
• Maximum Junction Temperature 175 °C
• 5 μS short circuit SOA
IC(Nominal) = 75A
• SquareRBSOA
G
tSC ≥ 5μs, TJ(max) = 175°C
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
• TightParameterDistribution
• LeadFreePackage
E
VCE(on) typ. = 1.70V
n-channel
C
Benefits
C
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
E
E
C
C
G
G
TO-247AC
TO-247AD
IRGP4066DPbF
IRGP4066D-EPbF
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
600
140
V
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
90
75
ICM
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
225
A
ILM
300
IF @ TC = 25°C
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
140
IF @ TC = 100°C
90
IFM
300
VGE
±20
V
±30
PD @ TC = 25°C
454
W
PD @ TC = 100°C
Maximum Power Dissipation
227
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
Max.
0.33
1.0
Units
RθJC (IGBT)
RθJC (Diode)
RθCS
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
°C/W
–––
Thermal Resistance, Case-to-Sink (flat, greased surface)
0.24
–––
–––
40
RθJA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
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10/08/2010
IRGP4066DPbF/IRGP4066D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Min.
600
—
Typ.
—
Max. Units
Conditions
VGE = 0V, IC = 100μA
V(BR)CES
—
V
ΔV(BR)CES/ΔTJ
VGE = 0V, IC = 2.0mA (25°C-175°C)
IC = 75A, VGE = 15V, TJ = 25°C
IC = 75A, VGE = 15V, TJ = 150°C
IC = 75A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 2.1mA
Temperature Coeff. of Breakdown Voltage
0.30
1.70
2.0
2.1
—
—
V/°C
—
2.10
—
VCE(on)
Collector-to-Emitter Saturation Voltage
—
V
—
—
VGE(th)
Gate Threshold Voltage
4.0
—
6.5
—
V
mV/°C
S
ΔVGE(th)/ΔTJ
VCE = VGE, IC = 2.1mA (25°C - 175°C)
Threshold Voltage temp. coefficient
Forward Transconductance
-21
50
V
CE = 50V, IC = 75A, PW = 60μs
gfe
—
—
ICES
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 75A
Collector-to-Emitter Leakage Current
—
1.0
1040
2.23
1.8
—
100
—
μA
—
VFM
IGES
Diode Forward Voltage Drop
—
3.0
—
V
IF = 75A, TJ = 175°C
VGE = ±20V
—
Gate-to-Emitter Leakage Current
—
±200
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
150
40
Max. Units
225
Conditions
IC = 75A
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
VGE = 15V
60
90
nC
μJ
ns
VCC = 400V
60
IC = 75A, VCC = 400V, VGE = 15V
RG = 10Ω, L = 200μH, TJ = 25°C
2465
2155
4620
50
3360
3040
6400
70
Energy losses include tail & diode reverse recovery
IC = 75A, VCC = 400V, VGE = 15V
RG = 10Ω, L = 200μH, TJ = 25°C
70
90
td(off)
tf
Turn-Off delay time
Fall time
200
60
225
80
Eon
Eoff
Etotal
td(on)
tr
IC = 75A, VCC = 400V, VGE=15V
RG=10Ω, L=200μH, TJ = 175°C
Energy losses include tail & diode reverse recovery
IC = 75A, VCC = 400V, VGE = 15V
RG = 10Ω, L = 200μH
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
3870
2815
6685
50
—
—
μJ
ns
pF
—
—
70
—
td(off)
tf
TJ = 175°C
Turn-Off delay time
Fall time
240
70
—
—
Cies
Coes
Cres
VGE = 0V
Input Capacitance
4440
245
130
—
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
—
f = 1.0Mhz
TJ = 175°C, IC = 300A
VCC = 480V, Vp 600V
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
Ω
Rg = 10 , VGE = +20V to 0V
V
CC = 400V, Vp 600V
5
—
—
μs
Ω
Rg = 10 , VGE = +15V to 0V
TJ = 175°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
470
155
27
—
—
—
μJ
ns
A
VCC = 400V, IF = 75A
Irr
VGE = 15V, Rg = 10Ω, L = 60μH
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V, L = 10μH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
2
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IRGP4066DPbF/IRGP4066D-EPbF
140
120
100
80
400
300
200
100
0
60
40
20
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
T
C
T
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1000
1000
10μsec
100
10
1
100μsec
100
10
1
1msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
10
100
(V)
1000
V
(V)
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
300
250
200
150
100
50
300
250
200
150
100
50
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
V
= 18V
= 15V
= 12V
= 10V
GE
V
GE
V
GE
V
GE
V
= 8.0V
GE
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = ≤60μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = ≤60μs
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3
IRGP4066DPbF/IRGP4066D-EPbF
300
300
250
200
150
100
50
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
250
200
150
100
50
-40°C
25°C
175°C
0
0
0
2
4
6
8
10
0.0
1.0
2.0
(V)
3.0
4.0
V
F
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = ≤60μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
20
18
16
14
12
20
18
16
14
12
I
I
I
= 38A
= 75A
= 150A
CE
CE
CE
I
I
I
= 38A
= 75A
= 150A
CE
CE
CE
10
8
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
20
18
16
14
12
10
8
300
250
200
150
100
50
T
= 25°C
J
T = 175°C
J
I
I
I
= 38A
= 75A
= 150A
CE
CE
CE
6
4
2
0
0
4
6
8
10
12
14
16
18
5
10
15
20
V
Gate-to-Emitter Voltage (V)
V
(V)
GE,
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 12 - Typ. Transfer Characteristics
CE = 50V; tp = 60μs
TJ = 175°C
V
4
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IRGP4066DPbF/IRGP4066D-EPbF
12000
10000
8000
6000
4000
2000
0
1000
td
OFF
E
ON
t
F
100
td
E
ON
OFF
t
R
10
0
25
50
75
(A)
100
125
150
0
50
100
150
I
(A)
C
I
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
11000
10000
9000
7000
1000
td
OFF
E
t
ON
F
5000
t
R
100
E
OFF
3000
1000
td
ON
10
0
25
50
75
100
0
20
40
60
(Ω)
80
100
120
R
G
Rg (Ω)
Fig. 16 - Typ. Switching Time vs. RG
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V
35
30
R
5.0Ω
G =
30
25
20
15
10
R
10Ω
G =
25
20
15
R
47Ω
G =
R
100Ω
G =
60
20
40
80 100 120 140 160
(A)
0
20
40
60
(Ω)
80
100
I
R
F
G
Fig. 17 - Typ. Diode IRR vs. IF
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
TJ = 175°C
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5
IRGP4066DPbF/IRGP4066D-EPbF
30
3000
2500
2000
1500
5.0Ω
10Ω
150A
Ω
47
25
20
15
100Ω
75A
38A
200
300
400
500
600
700
200
300
400
500
600
700
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 20 - Typ. Diode QRR vs. diF/dt
Fig. 19 - Typ. Diode IRR vs. diF/dt
V
CC = 400V; VGE = 15V; TJ = 175°C
VCC = 400V; VGE = 15V; IF = 75A; TJ = 175°C
400
800
20
15
10
5
Ω
= 10
R
G
350
300
250
200
150
100
T
sc
600
400
200
0
R
= 22Ω
G
I
sc
R
R
= 47Ω
G
= 100Ω
G
0
10
20
30
40
(A)
50
60
70
8
10
12
14
(V)
16
18
I
V
F
GE
Fig. 22 - VGE vs. Short Circuit Time
Fig. 21 - Typ. Diode ERR vs. IF
VCC = 400V; TC = 25°C
TJ = 175°C
10000
1000
100
16
14
12
10
8
Cies
V
= 400V
= 300V
CES
V
CES
Coes
Cres
6
4
2
10
0
0
100
200
V
300
(V)
400
500
0
20 40 60 80 100 120 140 160
, Total Gate Charge (nC)
Q
CE
G
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 75A; L = 485μH
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
6
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IRGP4066DPbF/IRGP4066D-EPbF
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.01
0.02
0.01
τ
0.00738 0.000009
τ
J τJ
τ
Cτ
0.09441 0.000179
0.13424 0.002834
0.09294 0.0182
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
0.001
0.0001
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
τ
0.02738 0.000053
τ
J τJ
τ
Cτ
0.02
0.01
0.34077 0.000485
0.41380 0.005203
0.22819 0.034407
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGP4066DPbF/IRGP4066D-EPbF
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
-5V
Rg
DC
DUT
VCC
DUT /
DRIVER
VCC
SCSOA
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R = VCC
ICM
100K
D1 22K
C sense
VCC
DUT
DUT
G force
Rg
0.0075μF
E sense
E force
Fig.C.T.6 - BVCES Filter Circuit
Fig.C.T.5 - Resistive Load Circuit
8
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IRGP4066DPbF/IRGP4066D-EPbF
600
500
400
300
200
100
0
120
100
80
600
500
400
300
200
100
0
120
100
80
60
40
20
0
tf
tr
TEST
CURRENT
90% ICE
90%
ICE
60
40
5% VCE
5% ICE
10%
ICE
5% VCE
20
0
Eon
Eof f Los s
Loss
-100
-20
-100
-20
7.6
7.8
8.0
8.2
-0.4 -0.2 0.0 0.2 0.4 0.6
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
90
80
700
600
500
400
300
200
100
0
700
Q
600
500
400
300
200
100
0
70
60
50
VCE
ICE
tRR
40
30
20
10
0
-10
Peak IRR
-20
-30
-40
-50
-100
-100
-0.20 -0.10 0.00 0.10 0.20 0.30 0.40
-3
0
3
6
9
12
time (µS)
Time (uS)
Fig. WF4 - Typ. S.C. Waveform
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 25°C using Fig. CT.3
@ TJ = 175°C using Fig. CT.4
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9
IRGP4066DPbF/IRGP4066D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRGP4066DPbF/IRGP4066D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/2010
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11
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