IRGP4078DPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS;
| 型号： | IRGP4078DPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS 开关 |
| 文件： | 总11页 (文件大小：828K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGP4078DPbF
IRGP4078D-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175°C
• 5 µs short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature co-efficient
• Ultra-low VF Hyperfast Diode
• Tight parameter distribution
G
Benefits
E
C
G
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(ON), Low Switching Losses
and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
IRGP4078D-EP
TO-247AD
G
Gate
C
E
Collector
Emitter
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRGP4078DPbF
IRGP4078D-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRGP4078DPbF
IRGP4078D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
74
50
V
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
ICM
ILM
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
150
200
44
A
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
25
I
I
FSM @ TC = 25°C Diode Non Repetitive Peak Surge Current @ TJ = 25°C
FRM @Tc = 100°C Diode Repetitive Peak Forward Current at tp=10µs
120
79
VGE
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
±20
±30
278
139
V
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
W
TJ
Operating Junction and
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
°C
300
(0.063 in.(1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
1
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© 2012 International Rectifier
January 8, 2013
IRGP4078DPbF/EP
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.54
2.55
–––
40
Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT)
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode)
°C/W
RθCS
RθJA
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
600
—
—
—
—
4.0
—
—
—
Typ.
—
Max. Units
Conditions
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 1mA (25°C-175°C)
V(BR)CES
V(BR)CES/TJ
VCE(on)
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
—
—
V
0.45
1.9
2.5
2.6
—
2.2
—
V
IC = 50A, VGE = 15V, TJ = 25°C
IC = 50A, VGE = 15V, TJ = 150°C
IC = 50A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 1.0mA
—
VGE(th)
gfe
ICES
Gate Threshold Voltage
Forward Transconductance
Collector-to-Emitter Leakage Current
6.5
—
V
S
26
V
CE = 50V, IC = 50A, PW = 20µs
VGE = 0V, VCE = 600V
GE = 0V, VCE = 600V, TJ = 175°C
1.0
600
1.17
1.06
—
80
µA
—
V
VFM
IGES
Diode Forward Voltage Drop
—
—
—
1.30
—
V
IF = 25A
IF = 25A, TJ = 175°C
Gate-to-Emitter Leakage Current
±100
nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-Off Switching Loss
Min.
—
—
—
—
Typ.
61
20
22
1.1
Max. Units
92
Conditions
Qg
IC = 50A
GE = 15V
VCC = 300V
nC
V
Qge
Qgc
Eoff
30
33
1.4
mJ IC = 50A, VCC = 400V, VGE = 15V
RG = 10, L = 210µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
mJ IC = 50A, VCC = 400V, VGE=15V
td(off)
tf
Eoff
Turn-Off delay time
Fall time
Turn-Off Switching Loss
—
—
—
116
33
1.5
—
—
—
ns
RG = 10, L = 210µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
td(off)
tf
Cies
Coes
Cres
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
113
54
2105
131
59
—
—
—
—
—
ns
pF VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 200A
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
VCC = 480V, Vp ≤ 600V
Rg = 10, VGE = +20V to 0V
VCC = 400V, Vp ≤ 600V
5
—
—
µs
Rg = 10, VGE = +15V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, L = 23µH, RG = 10.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
fsw = 20KHz, refer to figure 19.
R is measured at TJ of approximately 90°C.
Sinusoidal half wave, t = 10ms.
2
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© 2012 International Rectifier
January 8, 2013
IRGP4078DPbF/EP
300
250
200
150
100
50
80
60
40
20
0
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs.
Case Temperature
Case Temperature
1000
100
10
200
150
100
50
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
1
0
10
100
(V)
1000
0
2
4
6
8
10
V
V
(V)
CE
CE
Fig. 4 - Typ. IGBT Output Characteristics
Fig. 3 - Reverse Bias SOA
TJ = -40°C; tp = 20µs
TJ = 150°C; VGE = 20V
200
150
100
50
200
150
100
50
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 20µs
TJ = 25°C; tp = 20µs
3
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© 2012 International Rectifier
January 8, 2013
IRGP4078DPbF/EP
12
10
8
1000
100
10
I
= 25A
= 50A
= 100A
CE
I
CE
6
I
CE
4
-40°C
25°C
175°C
2
0
1
5
10
15
20
0.0
1.0
2.0
3.0
V
(V)
V
(V)
GE
F
Fig. 8 - Typical VCE vs. VGE
Fig. 7 - Typ. Diode Forward Voltage Drop
TJ = -40°C
Characteristics
12
12
10
8
10
8
I
= 25A
= 50A
= 100A
CE
I
CE
I
= 25A
= 50A
= 100A
I
CE
CE
I
CE
6
4
2
0
6
I
CE
4
2
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 175°C
TJ = 25°C
5000
4000
3000
2000
1000
0
350
300
250
200
150
100
50
E
OFF
T = 25°C
J
T = 175°C
J
0
10 20 30 40 50 60 70 80 90 100
(A)
4
6
8
10 12 14 16 18 20
(V)
I
V
C
GE
Fig. 12 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 210mH; VCE = 400V, RG = 10; VGE = 15V
Fig. 11 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
4
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© 2012 International Rectifier
January 8, 2013
IRGP4078DPbF/EP
1000
100
10
5000
4000
3000
2000
1000
E
OFF
td
t
OFF
F
0
20
40
60
80
100
0
20
40
60
80
100
I
(A)
C
Rg ( )
Fig. 13 - Typ. Switching Time vs. IC
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210mH; VCE = 400V, ICE = 50A; VGE = 15V
TJ = 175°C; L = 210mH; VCE = 400V, RG = 10; VGE = 15V
1000
350
280
210
140
70
20
16
12
8
T
I
td
sc
sc
OFF
100
t
F
10
4
0
20
40
60
80
100
8
10
12
14
(V)
16
18
R
( )
V
G
GE
Fig. 16 - VGE vs. Short Circuit
CC = 400V; TC = 25°C
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210mH; VCE = 400V, ICE = 50A; VGE = 15V
V
16
14
12
10
8
10000
V
V
= 400V
= 300V
CES
CES
Cies
1000
6
100
Coes
4
Cres
2
0
10
0
10
20
30
40
50
60
70
0
100
200
V
300
(V)
400
500
Q
, Total Gate Charge (nC)
G
CE
Fig. 18 - Typical Gate Charge vs. VGE
CE = 50A
Fig. 17 - Typ. Capacitance vs. VCE
I
VGE= 0V; f = 1MHz
5
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© 2012 International Rectifier
January 8, 2013
IRGP4078DPbF/EP
6.0
5.0
4.0
3.0
2.0
140
120
100
80
I
= 1.0mA
D= 0.1
C
D= 0.2
60
Square Pulse,
f = 20KHz
D = t/T
40
D= 0.5
100
20
t
T = 50us
0
25
50
75
100
125
150
175
25
50
75
125
150
175
T , Temperature (°C)
Case Temperature (°C)
J
Fig. 20 - Typical Gate Threshold Voltage
Fig. 19 - Maximum Diode Repetitive Forward
(Normalized) vs. Junction Temperature
Peak Current vs. Case Temperature
1
D = 0.50
0.20
0.1
Ri (°C/W)
0.011823
0.150739
0.223153
0.153695
i (sec)
0.000009
0.000142
0.002294
0.014121
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
J J
CC
1 1
2 2
3 3
4 4
0.02
0.01
0.01
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 21. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
Ri (°C/W)
0.073136
0.471726
1.318881
0.686257
i (sec)
0.000027
0.000218
0.002656
0.026124
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
0.1
J J
CC
0.02
0.01
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.01
SINGLE PULSE
Notes:
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 22. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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© 2012 International Rectifier
January 8, 2013
IRGP4078DPbF/EP
L
L
VCC
80 V
DUT
+
-
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
4X
DC
VCC
DUT
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.3 - S.C. SOA Circuit
C force
100K
D1 22K
DUT
C sense
G force
0.0075µF
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
© 2012 International Rectifier
7
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January 8, 2013
IRGP4078DPbF/EP
600
500
400
300
200
100
0
60
50
40
30
20
10
0
500
400
300
200
100
0
500
tf
VCE
400
300
200
90% ICE
ICE
100
5% VCE
10% ICE
0
Eoff Loss
-100
-100
-100
-10
-5
0
5
10
-3
-0.5
2
4.5
7
time (µs)
time(µs)
Fig. WF2 - Typ. S.C. Waveform @ TJ = 25°C
Fig. WF1 - Typ. Turn-off Loss Waveform
using Fig. CT.3
@ TJ = 175°C using Fig. CT.4
8
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© 2012 International Rectifier
January 8, 2013
IRGP4078DPbF/EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
IRFPE30
135H
57
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com © 2012 International Rectifier
9
January 8, 2013
IRGP4078DPbF/EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
P A R T N U M B E R
D A T E C O D E
IN T E R N A T IO N A L
R E C T IF IE R
L O G O
L O T C O D E 5 6 5 7
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
Y E A R
W E E K 3 5
L IN E
0
=
2 0 0 0
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d - F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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© 2012 International Rectifier
January 8, 2013
IRGP4078DPbF/EP
Qualification Information†
Qualification Level
Industrial†
(per JEDEC JESD47F) ††
N/A
TO-247AC
TO-247AD
Moisture Sensitivity Level
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11
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© 2012 International Rectifier
January 8, 2013
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