IRGP8B120KD-E [INFINEON]
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN;
| 型号： | IRGP8B120KD-E |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN 局域网 电动机控制 栅 晶体管 |
| 文件： | 总12页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94386
IRGP8B120KD-E
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 1200V
Features
IC = 10A, TC=100°C
tsc > 10µs, TJ=150°C
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
G
• 10µs Short Circuit Capability.
• Square RBSOA.
E
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
VCE(on) typ. = 2.25V
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-247AD
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
1200
V
IC @ TC = 25°C
20
I
C @ TC = 100°C Continuous Collector Current
10
ICM
Pulsed Collector Current
40
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
40
A
IF @ TC = 25°C
20
IF @ TC = 100°C Diode Continuous Forward Current
10
40
IFM
Diode Maximum Forward Current
Gate-to-Emitter Voltage
VGE
± 20
V
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
135
W
54
TJ
Operating Junction and
-55 to +150
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Min.
–––
–––
–––
–––
–––
Typ.
–––
Max.
0.92
1.58
–––
40
Units
Rθ
JC
RθJC
–––
°C/W
Rθ
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
0.24
CS
Rθ
–––
JA
Wt
6 (0.21)
–––
g (oz)
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1
07/01/02
IRGP8B120KD-E
Electrical Characteristics @TJ = 25°C (unless otherwise specified)
R e f. F ig .
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 500µA
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
1200 ––– –––
V
∆
∆
V(BR)CES/ TJ Temperature Coeff. of Breakdown Voltage ––– 1.15 ––– V/°C VGE = 0V, IC = 1.0mA, (25°C-125°C)
VCE(on)
Collector-to-Emitter Saturation Voltage
––– 2.25 2.45
––– 2.65 2.85
V
IC = 8.0A, VGE = 15V
5,6,7
IC = 8.0A,VGE = 15V, TJ = 125°C
VCE = VGE, IC = 250µA
9,10,11
9,10,11
12
VGE(th)
Gate Threshold Voltage
4.0
5.0
6.0
V
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
––– -11 ––– mV/°C VCE = VGE, IC = 1.0mA, (25°C-125°C)
gfe
Forward Transconductance
––– 5.2 –––
––– 5.0 100
––– 125 300
––– 1.85 2.10
––– 1.95 2.20
S
VCE = 50V, IC = 8.0A, PW=80µs
ICES
Zero Gate Voltage Collector Current
µA VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 125°C
VFM
Diode Forward Voltage Drop
V
IF = 8.0A
IF = 8.0A
8
TJ = 125°C
IGES
Gate-to-Emitter Leakage Current
––– ––– ±100 nA VGE = ±20V
Switching Characteristics @TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Min.
Typ. Max. Units
Conditions
R ef.F ig.
23
Qg
–––
50
75
8.0
38
IC = 8.0A
nC VCC = 400V
VGE = 15V
Qge
Qgc
Eon
––– 6.0
––– 25
CT 1
––– 325 450
––– 525 700
––– 850 1150
IC = 8.0A, VCC = 600V
CT 4
CT 4
Ω
Eoff
µJ VGE = 15V,RG = 22 , L =1.0mH
E
tot
Ls = 150nH TJ = 25°C
td(on)
tr
–––
–––
30
15
39
21
IC = 8.0A, VCC = 600V
ns VGE = 15V, RG = 22Ω L =1.0mH
Ls = 150nH, TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 165 180
––– 33 43
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
––– 525 675
––– 725 975
––– 1250 1650
IC = 8.0A, VCC = 600V
CT 4
µJ VGE = 15V,RG = 22Ω, L =1.0mH
13,15
WF 1WF 2
14, 16
CT 4
E
tot
Ls = 150nH TJ = 25°C
td(on)
tr
td(off)
tf
–––
–––
30
15
39
21
IC = 8.0A, VCC = 600V
Ω
ns VGE = 15V, RG = 22 L =1.0mH
Turn-Off Delay Time
Fall Time
––– 195 210
––– 42 55
––– 690 –––
Ls = 150nH, TJ = 125°C
WF 1
WF 2
C
ies
Input Capacitance
VGE = 0V
Coes
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operting Area
–––
–––
45
22
–––
–––
pF VCC = 30V
22
C
res
f = 1.0MHz
RBSOA
FULL SQUARE
TJ = 150°C, IC = 32A, Vp =1200V
4
Ω
VCC = 900V, VGE = +15V to 0V,RG = 22
CT 2
Ω
SCSOA
Short Circuit Safe Operting Area
10
––– –––
µs TJ = 150°C, Vp =1200V, RG = 22
VCC= 900V, VGE = +15V to 0V
µJ TJ = 125°C
ns VCC = 600V, IF = 8.0A, L = 1.0mH
VGE = 15V,RG = 22Ω, Ls = 150nH
CT 3
WF 4
Erec
trr
Reverse Recovery energy of the diode
Diode Reverse Recovery time
––– 650 875
17,18,19
20, 21
CT 4,WF 3
–––
–––
95
16
112
20
Irr
Diode Peak Reverse Recovery Current
A
Note to
are on page 15
2
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IRGP8B120KD-E
25
20
15
10
5
160
140
120
100
80
60
40
20
0
0
0
20 40 60 80 100 120 140 160
(°C)
0
20 40 60 80 100 120 140 160
T
T
(°C)
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
100
10
1
10 µs
10
1
100 µs
1ms
DC
0.1
0
1
10
100
(V)
1000
10000
10
100
1000
10000
V
V
(V)
CE
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 150°C
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE =15V
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3
IRGP8B120KD-E
35
35
30
25
20
15
10
5
30
25
20
15
10
5
V
= 18V
GE
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
TJ = -40°C; tp = 80µs
35
30
25
20
15
10
5
35
-40°C
25°C
30
V
= 18V
GE
125°C
25
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
20
15
10
5
0
0
0
1
2
3
4
5
6
0.0
1.0
2.0
(V)
3.0
4.0
V
(V)
V
CE
F
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
tp = 80µs
TJ = 125°C; tp = 80µs
4
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IRGP8B120KD-E
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 4.0A
= 8.0A
= 16A
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
80
70
60
50
40
30
20
10
0
20
18
16
14
12
10
8
T = 125°C
J
T = 25°C
J
I
I
I
= 4.0A
= 8.0A
= 16A
CE
CE
CE
6
T = 125°C
J
4
2
T = 25°C
J
0
5
10
15
20
0
5
10
15
20
V
(V)
GE
V
(V)
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 125°C
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5
IRGP8B120KD-E
1400
1000
100
10
1200
td
OFF
1000
800
600
400
200
0
E
OFF
t
td
F
ON
E
ON
t
R
1
0
5
10
(A)
15
20
0
5
10
(A)
15
20
I
C
I
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 125°C; L=1.0mH; VCE= 600V
RG= 22Ω; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 125°C; L=1.0mH; VCE= 600V
RG= 22Ω; VGE= 15V
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
1000
100
10
td
OFF
E
OFF
E
ON
t
F
td
t
ON
R
0
20
40
60
(
80
100
120
0
20
40
60
(
80
100
120
R
)
Ω
R
)
Ω
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 125°C; L=1.0mH; VCE= 600V
ICE= 8.0A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 125°C; L=1.0mH; VCE= 600V
ICE= 8.0A; VGE= 15V
6
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IRGP8B120KD-E
25
20
15
10
5
25
20
15
10
5
R
R
10 Ω
G =
G =
22
47
Ω
Ω
R
G =
R
100
Ω
G =
0
0
0
50
100
150
0
5
10
(A)
15
20
R
(
Ω)
I
G
F
Fig. 18 - Typical Diode IRR vs. RG
Fig. 17 - Typical Diode IRR vs. IF
TJ = 125°C; IF = 8.0A
TJ = 125°C
25
20
15
10
5
2500
10Ω
16A
22Ω
47Ω
100
Ω
2000
8.0A
1500
1000
500
0
4.0A
0
0
200
400
600
800
1000
0
1
2
3
4
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typical Diode QRR
VCC= 600V; VGE= 15V;TJ = 125°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 600V; VGE= 15V;
IF= 8.0A; TJ = 125°C
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7
IRGP8B120KD-E
1000
900
800
700
600
500
400
300
200
100
10Ω
22Ω
47 Ω
100
Ω
0
0
5
10
(A)
15
20
I
F
Fig. 21 - Typical Diode ERR vs. IF
TJ = 125°C
16
1000
100
10
Cies
14
600V
800V
12
10
Coes
8
6
Cres
4
2
0
0
1
20
40
60
0
20
40
60
(V)
80
100
Q
, Total Gate Charge (nC)
G
V
CE
Fig. 23 - Typical Gate Charge vs. VGE
Fig. 22- Typ. Capacitance vs. VCE
ICE = 8.0A; L = 600µH
VGE= 0V; f = 1MHz
8
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IRGP8B120KD-E
10
1
D = 0.50
0.20
0.10
0.1
R1
R1
R2
R2
Ri (°C/W) τi (sec)
τ
J τJ
τ
0.620
0.295
0.00105
0.02066
0.05
τ
Cτ
0.01
0.001
0.0001
τ
1 τ1
2τ2
0.02
0.01
τ /
Ci= i Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.1
R1
R1
R2
R2
0.05
Ri (°C/W) τi (sec)
τ
J τJ
τ
1.011
0.572
0.001115
0.024151
τ
0.02
0.01
Cτ
0.01
0.001
0.0001
τ
1 τ1
2τ2
τ /
Ci= i Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRGP8B120KD-E
L
L
VCC
80 V
DU T
DU T
0
1000V
R g
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
d iode clamp /
DU T
L
D river
- 5V
D
C
900V
D UT /
DR IV ER
VCC
DU T
R g
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
CC
V
I
R =
C M
DU T
VCC
R g
Fig.C.T.5 - Resistive Load Circuit
10
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IRGP8B120KD-E
800
700
600
500
400
300
200
100
0
16
14
12
10
8
700
600
500
400
300
200
100
0
35
30
25
20
tf
tr
)
)
)
)
90% ICE
(V
V
15
(A
(A
90% test current
EC
CE
CE
EC
6
I
I
V
V
5% VCE
10% ICE
10
5
4
10% test current
5% V CE
2
0
0
Eon Loss
Eoff Los s
-100
-5
-100
-2
-0.10
0.05
Time (µs)
0.20
-0.50
0.50
1.50
2.50
Time(µs)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 125°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 125°C using Fig. CT.4
100
0
15
10
5
1000
900
800
700
600
500
400
300
200
100
0
100
90
80
70
60
50
40
30
20
10
0
QR R
VC E
tR R
-100
-200
-300
-400
-500
-600
-700
0
IC E
)
)
)
)
10%
Peak
IRR
-5
(V
(A
(V
A
F
F
EC
CE
I
V
I
V
Peak
IRR
-10
-15
-20
-25
-0.10
0.10
0.30
0.50
0.70
-5.00
0.00
5.00
10.00 15.00
time (µS)
time (µS)
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 125°C using Fig. CT.4
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11
IRGP8B120KD-E
TO-247AD Case Outline and Dimensions
Note:
Energy losses include "tail" and diode reverse recovery.
TO-247 package is not recommended for Surface Mount Application
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/02
12
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