IRGPC40K [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT; 绝缘栅双极晶体管短路额定IGBT超快
| 型号： | IRGPC40K |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT |
| 文件： | 总7页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 9.1077
IRGPC40K
INSULATEDGATEBIPOLARTRANSISTOR
Short Circuit Rated
UltraFastIGBT
Features
C
• Short circuit rated - 10µs @ 125°C, VGE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over
VCES =600V
5kHz)
curve
See Fig. 1 for Current vs. Frequency
VCE(sat) ≤ 3.2V
G
@VGE = 15V, IC = 25A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier
have higher usable current densities than comparable bipolar transistors,
while at the same time having simpler gate-drive requirements of the
familiar power MOSFET. They provide substantial benefits to a host of
high-voltage, high-current applications.
These new short circuit rated devices are especially suited for motor
control and other applications requiring short circuit withstand capability.
T
O -247AC
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
600
V
IC @ TC = 25°C
42
IC @ TC = 100°C
25
A
ICM
84
ILM
84
tsc
10
±20
µs
V
VGE
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
15
mJ
W
PD @ TC = 25°C
160
PD @ TC = 100°C Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
------
------
------
------
Typ.
------
Max.
0.77
------
40
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
0.24
------
6 (0.21)
------
g (oz)
IRGPC40K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage 600 ---- ----
Emitter-to-Collector Breakdown Voltage 20 ---- ----
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
V
V
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage---- 0.46 ---- V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage
---- 2.1 3.2
---- 2.8 ----
---- 2.5 ----
3.0 ---- 5.5
IC = 25A
VGE = 15V
V
IC = 42A
See Fig. 2, 5
IC = 25A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
ꢀ
7.0
14 ----
S
VCE = 100V, IC = 25A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
---- ---- 250 µA
---- ---- 1000
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
---- ---- ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
---- 61
---- 13
---- 22
---- 35
---- 27
92
19
IC = 25A
nC VCC = 400V
VGE = 15V
Qge
Qgc
td(on)
tr
See Fig. 8
33
----
----
TJ = 25°C
RiseTime
ns
IC = 25A, VCC = 480V
VGE = 15V, RG = 10Ω
td(off)
tf
Turn-Off Delay Time
---- 160 240
---- 130 200
---- 0.52 ----
---- 1.2 ----
---- 1.7 2.6
10 ---- ----
FallTime
Energy losses include "tail"
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
mJ
µs
See Fig. 9, 10, 11, 14
tsc
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω, VCPK < 500V
TJ = 150°C,
td(on)
tr
td(off)
tf
Turn-On Delay Time
RiseTime
---- 34
---- 28
----
----
ns
IC = 25A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
See Fig. 10, 14
Turn-Off Delay Time
FallTime
---- 300 ----
---- 310 ----
---- 3.6 ----
---- 7.5 ----
---- 1500 ----
---- 190 ----
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ
LE
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
---- 17
----
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
ꢀ Pulse width 5.0µs,
Repetitive rating; pulse width limited
single shot.
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
IRGPC40K
50
40
30
20
10
0
For both:
Triangular wave:
Duty cycle: 50%
T = 125°C
J
T
= 90°C
Gatedrive as specified
sink
Clamp voltage:
80% of rated
Power Dissipation = 35W
Square wave:
60% of rated
voltage
Ideal diodes
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
100
10
1
1000
100
T = 150°C
J
T = 150°C
J
T = 25°C
J
10
T = 25°C
J
V
= 15V
V
= 100V
GE
CC
20µs PULSE WIDTH
5µs PULSE WIDTH
A
A
0.1
1
0.1
1
10
5
10
15
20
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
IRGPC40K
50
40
30
20
10
0
5.0
4.0
3.0
2.0
1.0
V
GE
= 15V
V
= 15V
GE
80µs PULSE WIDTH
I
= 50A
C
I
I
= 25A
= 13A
C
C
A
A
-60 -40 -20
0
20 40
60
80 100 120 140 160
25
50
75
100
125
150
T , Case Temperature (°C)
T , Case Temperature (°C)
C
C
Fig. 4 - Maximum Collector Current vs.
Fig. 5 - Collector-to-Emitter Voltage vs.
CaseTemperature
CaseTemperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
0.02
0.01
Notes:
1. Duty factor D = t / t
2
thJC
1
1
2. Peak T = P
J
x Z
+ T
C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t
, Rectangular Pulse Duration (sec)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
IRGPC40K
20
16
12
8
2500
2000
1500
1000
500
V
I
= 400V
= 25A
V
C
C
C
= 0V,
f = 1MHz
CE
GE
ies
= C + C
,
C
SHORTED
C
ge
gc
gc
ce
= C
res
oes
= C + C
ce
gc
C
ies
C
oes
4
C
res
A
A
0
0
1
10
100
0
20
40
60
80
V , Collector-to-Emitter Voltage (V)
CE
Q , Total Gate Charge (nC)
g
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
10
2.2
2.1
2.0
1.9
1.8
1.7
1.6
V
= 480V
= 15V
= 25°C
= 25A
CC
V
GE
I
I
I
= 50A
C
C
C
T
I
C
C
= 25A
= 13A
1
R
G
= 10Ω
V
V
= 15V
= 480V
GE
CC
A
A
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
0
10
20
30
40
50
60
T , Case Temperature (°C)
C
Ω
, Gate Resistance ( )
R
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
CaseTemperature
IRGPC40K
10
1000
100
10
Ω
= 10
V
= 20V
= 125°C
R
GE
G
T
T
V
V
= 150°C
= 480V
= 15V
J
C
CC
GE
8
6
4
2
0
SAFE OPERATING AREA
A
A
1
1
10
100
1000
0
10
20
30
40
50
60
V
CE
, Collector-to-Emitter Voltage (V)
I , Collector-to-Emitter Current (A)
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-EmitterCurrent
NOTES:
- D -
3.65 (.143)
1
DIMENSIONS & TOLERANCING
5.30 (.209)
4.70 (.185)
15.90 (.626)
3.55 (.140)
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
DIMENSIONS ARE SHOWN
MILLIMETERS (INCHES).
CONFORM S TO JEDEC OUTLINE
TO-247AC.
15.30 (.602)
M
0.25 (.010)
5.50 (.217)
D
M
B
2
3
2.50 (.089)
1.50 (.059)
4
- B -
- A -
4
20.30 (.800)
19.70 (.775)
5.50 (.217)
4.50 (.177)
2X
LEAD ASSIGNMENTS
1 - GATE
1
2 - COLLECTOR
3 - EMITTER
2
3
4 - COLLECTOR
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
*
LONGER LEADED (20m m)
VERSION AVAILABLE (TO-247AD)
TO ORDER ADD "-E" SUFFIX
TO PART NUMBER
*
2.40 (.094)
0.80 (.031)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3X
3X
0.40 (.016)
2.00 (.079)
2X
5.45 (.215)
M
S
2.60 (.102)
2.20 (.087)
A
C
3.40 (.133)
3.00 (.118)
2X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
Dimensions in Millimeters and (Inches)
IRGPC40K
L
D.U.T.
480V
4 X IC@25°C
V *
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
D.U.T.
Fig. 14a - Switching
Loss Test Circuit
Driver*
V
C
50V
1000V
* Driver same type
as D.U.T., VC =
480V
90%
10%
Fig. 14b - Switching Loss
Waveforms
V
C
90%
t
d(off)
10%
5%
I
C
t
t
f
r
t
d(on)
t=5µs
E
on
E
off
E = (E +E )
off
ts
on
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