IRGS14C40LPBF [INFINEON]
IGBT with on-chip Gate-Emitter and Gate-Collector clamps; IGBT具有片上栅极 - 射极和门极 - 集电极夹
| 型号： | IRGS14C40LPBF |
| 厂家： | 
Infineon |
| 描述： | IGBT with on-chip Gate-Emitter and Gate-Collector clamps |
| 文件： | 总11页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95193A
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features
Most Rugged in Industry
TERMINAL DIAGRAM
Collector
BVCES = 370V min, 430V max
IC @ TC = 110°C = 14A
Logic-LevelGateDrive
> 6KV ESD Gate Protection
Low Saturation Voltage
VCE(on) typ= 1.2V @7A @25°C
IL(min)=11.5A @25°C,L=4.7mH
R1
Gate
R
2
High Self-clamped Inductive Switching Energy
Lead-Free
Emitter
Description
JEDEC TO-263AB
JEDEC TO-220AB
JEDEC TO-262AA
The advanced IGBT process family includes a
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits.
Unique features include on-chip active voltage
clamps between the Gate-Emitter and
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Gate-Collector which provide over voltage
protection capability in ignition circuits.
NOTE: IRGS14C40L is available in tape and reel. Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.
Absolute Maximum Ratings
Parameter
Max
Clamped
20
Unit
V
Condition
ohm
VCES
RG = 1K
Collector-to-Emitter Voltage
IC @ TC = 25°C
V
GE = 5V
GE = 5V
Continuous Collector Current
Continuous Collector Current
Continuous Gate Current
Peak Gate Current
A
IC @ TC = 110°C
V
14
A
IG
1
mA
mA
V
IGp
tPK = 1ms, f = 100Hz
10
VGE
Gate-to-Emitter Voltage
Clamped
125
PD @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
W
PD @ T = 110°C
54
W
TJ
- 40 to 175 °C
- 40 to 175 °C
TSTG
VESD
IL
Storage Temperature Range
Electrostatic Voltage
6
KV
A
ohm
C = 100pF, R = 1.5K
L = 4.7mH, T = 25°C
Self-clamped Inductive Switching Current
11.5
Thermal Resistance
Parameter
Min
Typ
Max
1.2
40
Unit
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(PCB Mounted, Steady State)
°C/W
ZθJC
Transient Thermal Impedance, Juction-to-Case (Fig.11)
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Page 1
11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
(unless otherwise specified)
Off-State Electrical Charasteristics @ TJ = 25°C
Parameter
Min Typ Max Unit
Conditions
R G = 1K ohm, I C=7A, VGE = 0V
I G=2m A
Fig
Collector-to-Emitter Breakdown Voltage
Gate-to-Emitter Breakdown Voltage
Collector-to-Emitter Leakage Current
370 400 430
V
V
BVCES
BVGES
I CES
10
12
15
µA R G=1K ohm, VCE = 250V
100
µA R G=1K ohm, VCE = 250V, TJ =150°C
BVCER Emitter-to-Collector Breakdown Voltage
24
10
28
75
20
V
I C = -10m A
ohm
R 1
R 2
Gate Series Resistance
Gate-to-Emitter Resistance
30 K ohm
(unless otherwise specified)
On-State Electrical Charasteristics @ TJ = 25°C
Parameter
Min Typ Max Unit
Conditions
Fig
1.2 1.40
1.35 1.55
1.35 1.55
1.5 1.7
1.55 1.75
1.6 1.8
I C = 7A, VGE = 4.5V
Collector-to-Emitter Saturation
Voltage
VCE(on)
V
I C = 10A, VGE = 4.5V
1
2
4
I C = 10A, VGE = 4.5V, TC= -40oC
I C = 14A, VGE = 5.0V, TC= -40oC
I C = 14A, VGE = 5.0V
I
C = 14A, VGE = 5.0V, TC=150oC
VGE(th) Gate Threshold Voltage
1.3 1.8 2.2
V
VCE = VGE, I C = 1 m A, TC=25oC
3, 5
8
V
V
CE = VGE, I C = 1 m A, TC=150oC
CE = 25V, I C = 10A, TC=25oC
0.75
10
1.8
19
gfs
Transconductance
15
S
A
I C
Collector Current
20
VCE = 10V, VGE = 4.5V
(unless otherwise specified)
Switching Characteristics @ TJ = 25°C
Parameter
Min Typ Max Unit
Conditions
Fig
7
Q g
Total Gate charge
27
I C = 10A, VCE=12V, VGE=5V
Q ge
Q gc
Gate - Emitter Charge
Gate - Collector Charge
Turn - on delay time
2.5
10
nC I C = 10A, VCE=12V, VGE=5V
15
I
C = 10A, VCE=12V, VGE=5V
0.6 0.9 1.35
t d(on)
VGE=5V, RG=1K ohm, L=1mH, VCE=14V
12
14
Rise time
1.6 2.8
4
t r
µs VGE=5V, RG=1K ohm, L=1mH, VCE=14V
VGE=5V, RG=1K ohm, L=1mH, VCE=300V
Turn - off delay time
3.7
6
8.3
t d(off)
C ies
Input Capacitance
550 825
100 150
VGE=0V, VCE=25V, f=1M H z
C oes
C res
Output Capacitance
pF VGE=0V, VCE=25V, f=1M H z
6
VGE=0V, VCE=25V, f=1M H z
Reverse Transfer Capacitance
12
18
25
15.5
11.5
16.5
7.5
L=0.7m H, TC=25°C
L=2.2m H, TC=25°C
L=4.7m H, TC=25°C
L=1.5m H, TC=150°C
I L
Self-Clamped
A
9
Inductive Switching Current
10
13
14
L=4.7m H, TC=150°C
L=8.7m H, TC=150°C
6
TJ =150oC,
t SC
Short Circuit Withstand Time
120
µs VCC = 16V, L = 10µH
R G = 1K ohm, VGE = 5V
14
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Page 2
11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
Fig.1 - Typ. Output Characteristics
TJ=25°C
Fig.2 - Typ. Output Characteristics
TJ=125°C
60
50
40
30
20
10
0
60
50
40
30
20
10
0
VGE = 10 V
VGE = 10 V
V
V
GE = 5.0V
GE = 4.5V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
VGE = 4.0V
VGE = 3.7V
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE (V)
VCE (V)
Fig.3 - Transfer Characteristics
VCE=20V; tp=20µs
Fig.4 - Typical VCE vs TJ
VGE=4.5V
100
90
80
70
60
50
40
30
20
10
0
1.6
TJ = 25°C
TJ = 125°C
1.5
1.4
1.3
1.2
1.1
1.0
IC = 10A
IC = 7A
150
-50
0
50
100
200
0
2
4
6
8
10
TJ (°C)
V
GE (V)
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Page 3
11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
Fig.6 - Typ. Capacitance vs VCE
VGE=0V; VCE=25V; f=1MHz
Fig.5 - Typical VGE(th) vs TJ
IC=1mA
1000
2.2
2.0
1.8
1.6
1.4
1.2
1.0
C ies
100
10
1
C oes
C res
-50
0
50
100 150
200
1
10
100
TJ (°C)
VCE (V)
Fig.7 - Typ. Gate Charge vs VGE
IC=10A; VCE=12V; VGE=5V
Fig.8 - Typical VCE vs VGE
20
18
16
14
12
10
8
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
IC= 7A; 125°C
IC = 7A; 25°C
IC=10A; 125°C
IC=10A; 25°C
6
4
2
0
0
5
10
15
20
25
30
2.5
3
3.5
4
4.5
VGE (V)
QG, Total Gate Charge (nC)
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Page 4
11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
Fig.9 - Self-clamp Avalance Current vs
Inductance @ 25°C
Fig.10 - Self-clamp Avalance Current
vs Inductance @ 150°C
40
20
18
16
14
12
10
8
35
30
25
20
15
10
Typical
Typical
Minimum
Minimum
1
6
4
0
2
3
4
5
0
2
4
6
8
10
Inductance (mH)
Inductance (mH)
Fig.11 - Transient Thermal Impedance, Junction-to-Case
10
1
D = 0.50
0.20
P
2
DM
0.10
0.05
0.1
t
1
t
2
0.02
0.01
Notes:
1. Duty factor D = t / t
SINGLE PULSE
(THERMAL RESPONSE)
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
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Page 5
11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
Fig.12 - Switching Waveform for Time Measurement
VGE= 5V; R = 1K ; L= 1mH; VCE= 14V; used circuit in Fig.14
Ω
G
450
400
350
300
250
200
150
100
50
8
VClamp
7
6
5
Vcl (measured)
4
3
VGE
2
1
t d (o f f )
0
0
-1
-2
t r
-2
-50
-14
-10
-6
2
6
10
14
t (µs)
Fig.13 - Self-clamped Inductive Switching Waveform
L=4.7mH; TC=25°C; used circuit in Fig.14
12
10
8
500
400
300
200
100
0
V clamp
I CE
6
4
2
0
-100
-2.E-05 -1.E-05 0.E+00 1.E-05
2.E-05
time
3.E-05
4.E-05
5.E-05
6.E-05
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Page 6
11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
Fig.14 - Test Circuit
0.47 Ω
L
1KΩ
D.U.T.
Ice
Fig.15 - Gate Charge Circuit
L
VCC
DUT
0
1K
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Page 7
11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
THIS IS AN IRF53 0S WITH
LOT C ODE 80 24
PART NUMBER
INTERNATIO NAL
REC T IF IER
LOGO
AS SEMBLED O N WW 02, 20 00
IN THE AS SEMBLY LINE "L"
F 530 S
DATE CO DE
YEAR 0 = 200 0
WEE K 0 2
No te : "P" in a s s e m b ly lin e
p o s itio n in d ic a te s "L e a d -F re e "
ASSEMBLY
LO T CO DE
LINE L
OR
P ART NUMBER
INTERNATIO NAL
REC T IFIER
LO GO
F530S
DATE C O DE
P = DES IG NATES LEAD-FREE
P RO DUC T (O P TIO NAL)
YEAR 0 = 2000
AS S EMBLY
LO T C O DE
WEEK 02
A = AS S EMBLY S ITE CO DE
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Page 8
11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LO T CO DE 1789
P ART NUMBER
INT ERNAT IO NAL
RECTIFIER
LO G O
AS SEMBLED O N WW 19, 1997
IN THE AS S EMBLY LINE "C"
DATE CO DE
YEAR 7 = 1997
WEEK 19
No te : "P" in a s s e m b ly line
p o s ition ind ic a te s "L e a d-F re e "
AS S E MB L Y
LO T CO DE
LINE C
OR
P ART NUMBER
DATE CO DE
INT ERNAT IO NAL
RECT IFIER
LO GO
P = DE S IGNAT E S L E AD-F R E E
P RO DUC T (O PTIO NAL)
YEAR 7 = 1997
AS S E MB L Y
LO T CO DE
WEEK 19
A = AS S E MB LY S IT E CO DE
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Page 9
11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010
LOT C ODE 1789
PART NUMBER
AS S EMB LED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTE RNAT IONAL
RECTIFIER
LOGO
Note: "P" in assembly line
position indicates "Lead-Free"
DATE CODE
YEAR 7 = 1997
WEEK 19
ASSEMBLY
LOT CODE
LINE C
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Page 10
11/19/04
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Ignition IGBT
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 11/04
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Page 11
11/19/04
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