IRGS4610DTRLPBF [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
| 型号： | IRGS4610DTRLPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
| 文件： | 总15页 (文件大小：408K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGR4610DPbF
IRGS4610DPbF
IRGB4610DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
C
VCES = 600V
C
C
IC = 10A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.7V @ 6A
E
E
E
C
G
G
G
G
D-Pak
D2-Pak
TO-220AB
E
IRGR4610DPbF
IRGS4610DPbF IRGB4610DPbF
n-channel
G
Gate
C
E
Applications
• Appliance Drives
• Inverters
• UPS
Collector
Emitter
→
Features
Low VCE(ON) and switching losses
Benefits
High efficiency in a wide range of applications and switching frequencies
Improved reliability due to rugged hard switching performance and higher
power capability
Square RBSOA and maximum junction temperature 175°C
Positive VCE(ON) temperature coefficient and tighter distribution of
parameters
Excellent current sharing in parallel operation
5μs short circuit SOA
Lead-free, RoHS compliant
Enables short circuit protection scheme
Environmentally friendly
Standard Pack
Form
Tube
Base part number
Package Type
Orderable Part Number
Quantity
75
IRGR4610DPbF
IRGR4610DTRPbF
IRGR4610DTRRPbF
IRGR4610DTRLPbF
IRGS4610DPbF
IRGS4610DTRRPbF
IRGS4610DTRLPbF
IRGB4610DPbF
Tape and Reel
Tape and Reel Right
Tape and Reel Left
Tube
Tape and Reel Right
Tape and Reel Left
Tube
2000
3000
3000
50
IRGR4610DPbF
D-PAK
D2 PAK
IRGS4610DPbF
IRGB4610DPbF
800
800
50
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
600
16
10
18
24
10
6
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
V
IC@ TC = 25°C
IC@ TC = 100°C
ICM
Continuous Collector Current
Pulsed Collector Current, VGE = 15V
ILM
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
A
IF @ TC = 25°C
IF @ TC=100°C
IFM
24
± 20
± 30
77
Diode Maximum Forward Current ‚
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
V
VGE
PD @ TC =25°
PD @ TC =100°
TJ
W
39
Maximum Power Dissipation
Operating Junction and
-40 to + 175
300
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
10lbf. In (1.1 N.m)
Mounting Torque, 6-32 or M3 Screw
TO-220
1
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IRGR/S/B4610DPbF
Thermal Resistance
Parameter
Min.
–––
–––
–––
Typ.
–––
–––
0.5
Max.
1.9
Units
Thermal Resistance, Junction-to-Case -(IGBT)
RθJC
RθJC
RθCS
Thermal Resistance, Junction-to-Case -(Diode)
6.3
Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220)
Thermal Resistance, Junction-to-Ambient (PCB mount) (D-PAK)
–––
–––
–––
–––
–––
–––
–––
50
110
40
°C/W
Thermal Resistance, Junction-to-Ambient (D-PAK)
Thermal Resistance, Junction-to-Ambient (PCB mount, Steady State)
(D2PAK)
RθJA
Thermal Resistance, Junction-to-Ambient ( Socket mount) (TO-220)
–––
–––
62
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
0.36
1.7
2.07
2.14
—
—
—
2.0
—
V
V/°C
V
GE = 0V, Ic =100 μA
V
GE = 0V, Ic = 250μA ( 25 -175 oC )
V(BR)CES/ TJ Temperature Coeff. of Breakdown Voltage
Δ
Δ
IC = 6.0A, VGE = 15V, TJ = 25°C
IC = 6.0A, VGE = 15V, TJ = 150°C
IC = 6.0A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 150μA
VCE(on)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
V
—
4.0
—
—
—
—
6.5
—
—
25
VGE(th)
V
mV/°C
S
V
CE = VGE, IC = 250μA ( 25 -175 oC )
VCE = 25V, IC = 6.0A, PW =80μS
VGE(th)/ TJ Threshold Voltage temp. coefficient
gfe
-13
5.8
—
Δ
Δ
Forward Transconductance
ICES
μA VGE = 0V,VCE = 600V
Collector-to-Emitter Leakage Current
VGE = 0V, VCE = 600V, TJ =175°C
IF = 6.0A
—
—
—
—
—
250
VFM
IGES
1.60 2.30
V
Diode Forward Voltage Drop
1.30
—
—
±100
IF = 6.0A, TJ = 175°C
Gate-to-Emitter Leakage Current
nA VGE = ± 20 V
Notes:
ꢀ
VCC = 80% (VCES), VGE = 20V, L = 1.0mH, RG = 100Ω.
Rθ is measured at TJ approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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October 25, 2013
IRGR/S/B4610DPbF
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
13
3.0
6.4
56
122
178
27
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
IC = 6.0A
nC VCC = 400V
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
IC = 6.0A, VCC = 400V, VGE = 15V
RG = 47 , L=1mH, LS= 150nH, TJ = 25°C
Energy losses include tail and diode reverse recovery
IC = 6.0A, VCC = 400V
μJ
Ω
ns
RG = 47 , L=1mH, LS= 150nH
11
Ω
td(off)
tf
Turn-Off delay time
Fall time
TJ = 25°C
75
17
140
189
329
26
12
95
32
350
29
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
IC = 6.0A, VCC = 400V, VGE = 15V
RG = 47 , L=1mH, LS= 150nH, TJ = 175°C
μJ
Ω
Energy losses include tail and diode reverse recovery
IC = 6.0A, VCC = 400V
RG = 47 , L=1mH, LS= 150nH
ns
Ω
td(off)
tf
Turn-Off delay time
Fall time
TJ = 175°C
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF VCC = 30V
f = 1Mhz
10
TJ = 175°C, IC = 24A
VCC = 500V, Vp =600V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
RG = 100 , VGE = +20V to 0V
Ω
VCC = 400V, Vp =600V
SCSOA
Erec
Short Circuit Safe Operating Area
5
—
—
μs
RG = 100 , VGE = +15V to 0V
Ω
—
—
TJ = 175oC
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
178
74
12
μJ
ns
A
VCC = 400V, IF = 6.0A
VGE = 15V, Rg = 47 , L=1mH, LS=150nH
Ω
trr
Irr
—
—
—
—
3
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IRGR/S/B4610DPbF
80
70
60
50
40
30
20
10
0
18
16
14
12
10
8
6
4
2
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
T
C
T
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
10
1
100
10μsec
10
100μsec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0
0.1
10
100
(V)
1000
1
10
100
1000
V
(V)
V
CE
CE
Fig. 4 - Reverse Bias SOA
TJ = 175°C, VGE = 20V
Fig. 3 - Forward SOA,
TC = 25°C, TJ ≤ 175°C, VGE = 15V
20
15
10
5
20
15
10
5
Top
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
Top
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
V
GE
V
GE
V
GE
Bottom
V
GE
Bottom V
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
CE
V
(V)
CE
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
4
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IRGR/S/B4610DPbF
20
15
10
5
20
18
16
14
12
10
8
Top
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
V
GE
V
GE
V
GE
Bottom
V
GE
-40°C
25°C
175°C
6
4
2
0
0
0
2
4
6
8
10
0.0
1.0
2.0
3.0
V
(V)
F
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
10
10
8
6
4
2
0
8
6
4
2
0
I
I
I
= 3.0A
= 6.0A
= 12A
I
I
I
= 3.0A
= 6.0A
= 12A
CE
CE
CE
CE
CE
CE
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
10
8
20
18
16
14
12
10
8
T = 25°C
J
T = 175°C
J
I
I
I
= 3.0A
CE
CE
CE
6
= 6.0A
= 12A
4
6
4
2
2
0
0
4
6
8
10
12
14
16
5
10
15
20
V
Gate-to-Emitter Voltage (V)
V
(V)
GE,
GE
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
5
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IRGR/S/B4610DPbF
400
350
300
250
200
150
100
50
1000
100
10
td
OFF
t
F
E
OFF
td
ON
t
R
E
ON
1
0
2
4
6
I
8
10
12
14
2
4
6
8
10
12
14
I
(A)
C
(A)
C
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 47Ω; VGE= 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47Ω; VGE = 15V.
1000
100
10
220
200
E
OFF
td
180
OFF
160
t
F
E
ON
140
120
100
80
td
ON
t
R
1
60
0
25
50
75
(Ω)
100
125
0
25
50
75
100
125
R
G
Rg (Ω)
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
ICE= 6.0A; VGE= 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V
22
20
18
16
14
12
10
8
30
25
R
10Ω
G =
20
15
10
5
R
22Ω
G =
R
R
47Ω
G =
100Ω
G =
6
0
0
25
50
75
(Ω)
100
125
2
4
6
8
10
12
14
I
(A)
R
G
F
Fig. 18 - Typical Diode IRR vs. RG
Fig. 17 - Typical Diode IRR vs. IF
TJ = 175°C; IF = 6.0A
TJ = 175°C
6
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IRGR/S/B4610DPbF
1200
1000
800
20
18
16
14
12
10
8
12A
10
Ω
22
Ω
47
Ω
6.0A
600
100
Ω
400
3.0A
200
6
0
500
1000
1500
0
200
400
600
800 1000 1200
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; TJ = 175°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 6.0A; TJ = 175°C
50
20
350
300
250
200
150
100
50
T
sc
40
30
20
10
15
Ω
Ω
R
R
= 10
G
G
I
sc
= 22
= 47
10
5
Ω
R
G
Ω
R
= 100
G
0
8
10
12
14
(V)
16
18
2
4
6
8
10
12
14
I
(A)
V
GE
F
Fig. 22- Typ. VGE vs. Short Circuit Time
Fig. 21 - Typical Diode ERR vs. IF
VCC=400V, TC =25°C
TJ = 175°C
16
14
12
10
8
1000
100
10
Cies
V
V
= 400V
= 300V
CES
CES
Coes
Cres
6
4
2
0
1
0
2
4
6
8
10
12
14
0
100
200
V
300
(V)
400
500
Q
, Total Gate Charge (nC)
G
CE
Fig. 23- Typ. Capacitance vs. VCE
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 6.0A, L=600μH
VGE= 0V; f = 1MHz
7
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IRGR/S/B4610DPbF
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.0415
0.7262
0.7721
0.4016
0.000005
0.000076
0.000810
0.004929
τ
0.1
τ
J τJ
τ
Cτ
0.02
0.01
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
D = 0.50
0.20
0.10
1
R1
R1
R2
R2
R3
R3
R4
R4
0.05
Ri (°C/W) τi (sec)
0.2195
1.7733
2.9352
1.3704
0.000023
0.000165
0.001493
0.013255
τ
τ
J τJ
τ
Cτ
0.02
0.01
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
8
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IRGR/S/B4610DPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - Typical Filter Circuit for
V(BR)CES Measurement
9
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IRGR/S/B4610DPbF
600
500
400
300
200
100
0
12
10
8
600
500
400
300
200
100
0
30
25
tr
TEST
CURRENT
20
tf
90% test
current
15
6
90% ICE
10
4
10% test
current
5% ICE
5% VCE
5
2
5% VCE
0
0
Eoff Loss
Eon Loss
-100
-5
-100
-2
4.3
4.5
4.7
-0.2
0
0.2 0.4 0.6 0.8
1
time (μs)
time(μs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
500
100
15
80
70
60
50
40
30
20
10
0
VCE
450
400
350
300
250
200
150
100
50
0
-100
-200
10
5
QRR
tRR
0
10%
Peak
IRR
ICE
-300 Peak
IRR
-5
-400
-10
-15
-20
-500
-10
-20
-600
0
-0.05
0.05
0.15
0.25
-2 -1 0 1 2 3 4 5 6 7 8
time (μS)
Time (uS)
WF.3- Typ. Diode Recovery Waveform
@ TJ = 175°C using CT.4
WF.4- Typ. Short Circuit Waveform
@ TJ = 25°C using CT.3
10
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IRGR/S/B4610DPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
LOT CODE 1234
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
DATE CODE
YEAR 9 = 1999
WEEK 16
RECTIFIER
LOGO
IRFU120
916A
34
12
LINE A
ASSEMBLY
LOT CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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IRGR/S/B4610DPbF
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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IRGR/S/B4610DPbF
D2PakPackageOutline
Dimensions are shown in millimeters (inches)
D2PakPartMarkingInformation
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DAT E CODE
YEAR 0 = 2000
WE E K 02
ASSEMBLY
LOT CODE
LINE L
OR
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
AS S E MB L Y
LOT CODE
WEEK 02
A= ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
13
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October 25, 2013
IRGR/S/B4610DPbF
D2Pak Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
3.90 (.153)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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October 25, 2013
IRGR/S/B4610DPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220ABPartMarkingInformation
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLED ON WW 19, 2000
IN THE ASSEMBLY LINE "C"
DATE CODE
YEAR 0 = 2000
WEEK 19
Note: "P" in assembly line position
indicates "Lead - F ree"
AS S E MBL Y
LOT CODE
LINE C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification Information†
Industrial
Qualification Level
(per JEDEC JESD47F) ††
Moisture Sensitivity Level
D-Pak
MSL1
N/A
D2Pak
TO-220
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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October 25, 2013
相关型号：
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