IRH9230 [INFINEON]

TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A); 晶体管P沟道（ BVDSS = -200V ， RDS（ON） = 0.8ohm ，ID = -6.5A ）


型号：	IRH9230
厂家：	Infineon
描述：	TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A) 晶体管P沟道（ BVDSS = -200V ， RDS（ON） = 0.8ohm ，ID = -6.5A ）晶体晶体管局域网
文件：	总4页 (文件大小：115K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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Provisional Data Sheet No. PD-9.1391

IRH9230

AVALANCHE ENERGY AND dv/dt RATED

HEXFET^®TRANSISTOR

P-CHANNEL

RAD HARD

Product Summary

-200 Volt, 0.8Ω, RAD HARD HEXFET

International Rectifier’s P-Channel RAD HARD technology

HEXFETs demonstrate excellent threshold voltage stability

and breakdown voltage stability at total radiation doses as

high as 10⁵Rads (Si). Underidenticalpre- and post-radiation

test conditions, International Rectifier’s P-Channel RAD

HARD HEXFETs retainidentical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in gate

drive circuitry is required.These devices are also capable of

surviving transient ionization pulses as high as 1 x 10¹²Rads

(Si)/Sec, and return to normal operation within a few

microseconds. Single Event Effect (SEE) testing of

International Rectifier P-Channel RAD HARD HEXFETs has

demonstrated virtual immunity to SEE failure. Since the P-

Channel RAD HARD process utilizes International Rectifier’s

Part Number

IRH9230

BV_DSS

-200V

R_DS(on)

I_D

0.8Ω

-6.5A

Features:

Radiation Hardened up to 1 x 10⁵Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

patented HEXFET technology, the user can expect the n Identical Pre- and Post-Electrical Test Conditions

highest quality and reliability in the industry.

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

P-Channel RAD HARD HEXFET transistors also feature all

of the well-established advantages of MOSFETs, such as

voltage control,very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

They are well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifiers

and high-energy pulse circuits in space and weapons

environments.

Hermetically Sealed

Pre-Radiation

Absolute Maximum Ratings

Parameter

Continuous Drain Current

IRH9230

-6.5

Units

@ V

= -12V, T = 25°C

= -12V, T = 100°C Continuous Drain Current

-4.1

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

-26

@ T = 25°C

W/K ꢀ

0.2

±20

Single Pulse Avalanche Energy

Avalanche Current

330

-6.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

7.5

dv/dt

-5.0

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

LeadTemperature

Weight

300 (0.063 in. (1 .6mm) from case for 10s)

11.5 (typical)

Notes: See page 4

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IRH9230 Device

Pre-Radiation

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Units

Test Conditions

Drain-to-Source BreakdownVoltage

-200

—

= 0V, I = 1.0 mA

DSS

V/°C Reference to 25°C, I = -1.0 mA

∆BV

/∆T

Temperature Coefficient of Breakdown

Voltage

-0.10

DSS

Static Drain-to-Source

On-State Resistance

GateThresholdVoltage

ForwardTransconductance

Zero Gate Voltage Drain Current

—

-2.0

2.5

—

0.8

0.92

-4.0

—

-25

-250

= -12V, I = -4.1A

DS(on)

Ω

S ( )

= -12V, I = -6.5A

= V , I = -1.0 mA

GS(th)

Ω

> -15V, I

= -6.5A

= 0.8 x Max. Rating,V = 0V

DSS

µA

—

= 0.8 x Max. Rating

= 0V, T = 125°C

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain (“Miller”) Charge

Turn-On Delay Time

RiseTime

Turn-Off Delay Time

FallTime

Internal Drain Inductance

—

5.0

-100

100

= -20V

= +20V

GSS

= -12V, I = -6.5A

V = Max. Rating x 0.5

= -50V, I = -6.5A, R = 7.5Ω

d(on)

d(off)

Measured from the

Modified MOSFET

symbol showing the

internal inductances.

—

drain lead, 6mm (0.25

in.) from package to

center of die.

Measured from the

source lead, 6mm

(0.25 in.) from package

to source bonding pad.

Internal Source Inductance

—

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

—

900

250

—

= 0V, V

f = 1.0 MHz

= -25V

iss

oss

rss

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current

(Body Diode)

Pulse Source Current

(Body Diode)

—

-6.5

-26

Modified MOSFET symbol

showing the integral Reverse

p-n junction rectifier.

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

ForwardTurn-OnTime

—

-5.0

400

4.0

µC

T = 25°C, I = -6.5A, V

= 0V

T = 25°C, I = -6.5A, di/dt ≤ -100 A/µs

≤ -14V

Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .

S D

Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

Junction-to-Case

Junction-to-Ambient

—

1.67

—

thJC

thJA

K/W ꢀ

Notes: See page 4

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IRH9230 Device

Radiation Characteristics

Radiation Performance of P-Channel Rad Hard Both pre- and post-radiation performance are tested

and specified using the same drive circuitry and test

HEXFETs

conditions in order to provide a direct comparison. It

International Rectifier Radiation Hardened HEXFETs

should be noted that at a radiation level of 1 x 10⁵

are tested to verify their hardness capability. The

Rads (Si), no change in limits are specified in DC

parameters.

hardness assurance program at International Rectifier

uses two radiation environments.

High dose rate testing may be done on a special

Every manufacturing lot is tested in a low dose rate

request basis, using a dose rate up to 1 x 10¹²Rads

(total dose) environment per MlL-STD-750, test

(Si)/Sec.

method 1019. International Rectifier has imposed a

standard gate voltage of -12 volts per note 6 and a

International Rectifier radiation hardened P-Channel

bias condition equal to 80% of the device rated

DSS

HEXFETs are considered to be neutron-tolerant, as

stated in MIL-PRF-19500 Group D. International

Rectifier P-Channel radiation hardened HEXFETs

have been characterized in heavy ion Single Event

Effects environment and the results are shown in

voltage per note 7. Pre- and post-radiation limits of

the devices irradiated to 1 x 10⁵Rads (Si) are identical

and are presented in Table 1. The values in Table 1

will be met for either of the two low dose rate test

circuits that are used.

Table 3.

Table 1. Low Dose Rate

IRH9230

100K Rads (Si) Units

min. max.

Parameter

Test Conditions

V = 0V, I = -1.0 mA

Drain-to-Source Breakdown Voltage -200

—

-4.0

-100

100

-25

DSS

GS(th)

Gate Threshold Voltage

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Zero GateVoltage Drain Current

Static Drain-to-Source

-2.0

—

= V , I = -1.0 mA

= -20V

= 20V

GSS

µA

Ω

= 0.8 x Max Rating, V

= 0V

DSS

0.8

V = -12V, I = -4.1A

DS(on)1

On-State Resistance One

Diode ForwardVoltage

—

-5.0

T = 25°C, I = -6.5A,V

C S GS

Table 2. High Dose Rate

10¹¹Rads (Si)/sec 10¹²Rads (Si)/sec

Parameter

Units

Test Conditions

Min Typ Max Min Typ Max

DSS

Drain-to-SourceVoltage

—

-160

—

-160

Applied drain-to-source voltage

during gamma-dot

—

-12

-160

—

-12

-8

—

Peak radiation induced photo-current

di/dt

A/µsec Rate of rise of photo-current

µH Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence Range VDS Bias VGS Bias

Parameter

Typ.

-200

Units

Ion (MeV/mg/cm²) (ions / cm²) (µm)

(V)

1 x 10⁵

~41

-200

DSS

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IRH9230 Device

Radiation Characteristics

Total Dose Irradiation withV

Bias.

Repetitive Rating; Pulse width limited by

maximum junction temperature.

= 0 during

-12 volt V

applied and V

irradiation per MIL-STD-750, method 1019.

Refer to current HEXFET reliability report.

Total Dose Irradiation withV

Bias.

(pre-radiation)

@ V

= 50V, Starting T = 25°C,

= [0.5

= 0.8 rated BV

DSS

)

[BV

/(BV

-V )]

DSS DD

DSS

= -12V, 25 ≤ R ≤ 200 Ω

applied and V

= 0 during irradiation per

Peak I = -6.5A, V

MlL-STD-750, method 1019.

≤ -6.5A, di/dt ≤ -140 A/µs,

This test is performed using a flash x-ray

source operated in the e-beam mode (energy

~2.5 MeV), 30 nsec pulse.

≤ BV

, T ≤ 150°C

DSS J

Suggested R = 2.35Ω

Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

Process characterized by independent laboratory.

ꢀK/W = °C/W

All Pre-Radiation and Post-Radiation test

conditions are identical to facilitate direct

comparison for circuit applications.

W/K = W/°C

Case Outline and Dimensions

Conforms to JEDEC OutlineTO-204AA (ModifiedTO-3)

Dimensions in Millimeters and (Inches)

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331

EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732 020

IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897

IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 49 61 729 6590

IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: 39 11451 0111

IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: 81 33 983 0641

IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371

http://www.irf.com/

Data and specifications subject to change without notice.

4/96

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IRH9230 [INFINEON]

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