IRHF3230 [INFINEON]
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN;
| 型号： | IRHF3230 |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90672E
IRHF7230
JANSR2N7262
200V, N-CHANNEL
REF: MIL-PRF-19500/601
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
RAD-Hard™HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHF7230
IRHF3230
IRHF4230
IRHF8230
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
0.35Ω
0.35Ω
0.35Ω
5.5A JANSR2N7262
5.5A JANSF2N7262
5.5A JANSG2N7262
5.5A JANSH2N7262
1000K Rads (Si) 0.35Ω
TO-39
International Rectifier’s RAD-HardTM HEXFET®
technology provides high performance power
MOSFETs for space applications. This technology
has over a decade of proven performance and
reliability in satellite applications. These devices have
been characterized for both Total Dose and Single
Event Effects (SEE). The combination of low Rdson
and low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
5.5
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
3.5
22
D
GS
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
25
W
W/°C
V
D
C
Linear Derating Factor
0.2
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
240
mJ
A
AS
I
5.5
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
2.5
mJ
V/ns
AR
dv/dt
5.0
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (Typical)
For footnotes refer to the last page
www.irf.com
1
05/15/06
IRHF7230, JANSR2N7262
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
200
—
—
—
—
V
V
=0 V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.25
DSS
J
D
Voltage
R
V
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
—
—
—
—
—
—
0.35
0.36
4.0
—
V
V
= 12V, I = 3.5A
D
DS(on)
GS
GS
Ω
= 12V, I = 5.5A
D
2.0
2.5
—
V
V
DS
= V , I = 1.0mA
GS(th)
fs
GS
D
Ω
g
S ( )
V
> 15V, I
= 3.5A
DS
V
DS
I
25
= 160V,V =0V
DS GS
DSS
µA
—
250
V
= 160V
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
50
V
= 20V
GSS
GS
nA
nC
V
= -20V
GSS
GS
Q
Q
Q
V
= 12V, I = 5.5A
g
gs
gd
d(on)
r
GS D
10
V
DS
= 100V
25
t
t
t
t
25
V
= 100V, I = 5.5A,
DD
GS
D
40
V
= 12V, R = 7.5Ω
G
ns
Turn-Off Delay Time
Fall Time
Total Inductance
60
d(off)
45
—
f
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
L
L
S +
D
nH
C
C
C
Input Capacitance
—
—
—
1100
250
55
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
5.5
22
S
A
SM
V
1.4
400
3.0
V
T = 25°C, I = 5.5A, V
= 0V Ã
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
ns
µC
T = 25°C, I = 5.5A, di/dt ≤ 100A/µs
j
rr
RR
F
V
≤ 25V Ã
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
5.0
thJC
thJA
°C/W
Junction-to-Ambient
175
Typical socket mount
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHF7230, JANSR2N7262
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100KRads(Si)1
300K - 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
200
2.0
—
—
4.0
200
1.25
—
—
4.5
V
= 0V, I = 1.0mA
GS D
DSS
V
V
V = V , I = 1.0mA
GS
DS D
GS(th)
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
25
100
-100
50
V
= 20V
GS
GSS
nA
—
—
V
GS
= -20 V
GSS
I
—
—
µA
V
=160V, V =0V
DS GS
DSS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
Ã
—
0.35
—
0.48
Ω
V
= 12V, I =3.5A
GS
DS(on)
D
R
DS(on)
Ã
—
—
0.35
1.4
—
—
0.48
1.4
Ω
V
= 12V, I =3.5A
D
GS
V
SD
Ã
V
V
= 0V, I = 5.5A
GS S
1. Part number IRHF7230 (JANSR2N7262)
2. Part numbers IRHF3230 (JANSF2N7262), IRHF4230 (JANSG2N7262) and IRHF8230 (JANSH2N7262)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe OperatingArea
Ion
LET
(MeV/(mg/cm2))
28
Energy
(MeV)
285
Range
VDS(V)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43
39
Cu
Br
190
100
180
100
170
100
125
50
—
—
36.8
305
200
150
100
50
Cu
Br
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
Post-Irradiation
IRHF7230, JANSR2N7262
Fig 1. Typical Response of Gate Threshhold Fig 2. Typical Response of On-State Resistance
Voltage Vs. Total Dose Exposure
Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Fig 4. Typical Response of Drain to Source
Vs. Total Dose Exposure
Breakdown Vs. Total Dose Exposure
4
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Post-Irradiation
IRHF7230, JANSR2N7262
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
NeutronFluenceLevel
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
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5
RadiationCharacteristics
IRHF7230, JANSR2N7262
GS
DS
Note: Bias Conditions during radiation: V = 12 Vdc, V = 0 Vdc
Fig 10. Typical Output Characteristics
Fig 11. Typical Output Characteristics
Pre-Irradiation
Post-Irradiation100KRads(Si)
Fig 12. Typical Output Characteristics
Fig 13. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Post-Irradiation 1 Mega Rads (Si)
6
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Radiation Characteristics
IRHF7230, JANSR2N7262
GS
DS
Note: Bias Conditions during radiation: V = 0 Vdc, V = 160 Vdc
Fig 14. Typical Output Characteristics
Fig 15. Typical Output Characteristics
Pre-Irradiation
Post-Irradiation 100K Rads (Si)
Fig 16. Typical Output Characteristics
Fig 17. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Post-Irradiation 1 Mega Rads (Si)
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7
IRHF7230, JANSR2N7262
Pre-Irradiation
Fig 18. Typical Output Characteristics
Fig 19. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
Fig 21. Normalized On-Resistance
Vs.Temperature
8
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Pre-Irradiation
IRHF7230, JANSR2N7262
Fig 23. Typical Gate Charge Vs.
Fig 22. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100us
1ms
10ms
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
Fig 25. Maximum Safe Operating Area
Fig 24. Typical Source-Drain Diode
ForwardVoltage
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9
IRHF7230, JANSR2N7262
Pre-Irradiation
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 27a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
Fig 26. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 27b. Switching Time Waveforms
10
D = 0.50
0.20
1
0.10
0.05
0.02
P
2
DM
0.01
0.1
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
J
x Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig28. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
10
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Pre-Irradiation
IRHF7230, JANSR2N7262
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
0.01
Ω
t
p
Fig 29a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
Fig 29c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig29b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 30b. Gate Charge Test Circuit
Fig 30a. Basic Gate Charge Waveform
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11
IRHF7230, JANSR2N7262
Foot Notes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á
V
= 25V, starting T = 25°C, L= 15.9mH
J
GS
DS
DD
Peak I = 5.5A, V
irradiation per MIL-STD-750, method 1019, condition A.
= 12V
L
GS
Å Total Dose Irradiation with V Bias.
 I
≤ 5.5A, di/dt ≤ 120A/µs,
DS
applied and V = 0 during
GS
SD
DD
160 volt V
V
≤ 200V, T ≤ 150°C
DS
J
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-39
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 05/2006
12
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