IRHF3130PBF [INFINEON]
Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN;
| 型号： | IRHF3130PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90653F
IRHF7130
JANSR2N7261
100V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-39)
REF: MIL-PRF-19500/601
RAD Hard™ HEXFET® TECHNOLOGY
Product Summary
Part Number Radiation Level
RDS(on)
ID
QPL Part Number
IRHF7130
IRHF3130
IRHF4130
IRHF8130
100K Rads (Si)
300K Rads (Si)
500K Rads (Si)
1000K Rads (Si)
0.18Ω 8.0A JANSR2N7261
0.18Ω 8.0A JANSF2N7261
0.18Ω 8.0A JANSG2N7261
0.18Ω 8.0A JANSH2N7261
International Rectifier’s RADHard HEXFET® technology
provides high performance power MOSFETs for
space applications. This technology has over a
decade of proven performance and reliability in
satellite applications. These devices have been
characterized for both Total Dose and Single Event
Effects (SEE). The combination of low Rdson and
low gate charge reduces the power losses in
switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
TO-39
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
8.0
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
5.0
32
C
I
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
DM
@ T = 25°C
P
25
W
W/°C
V
D
C
0.20
±20
130
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
GS
E
mJ
A
AS
I
AR
8.0
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
mJ
V/ns
AR
dv/dt
2.5
5.5
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
300 (0.063 in.(1.6mm) from case for 10s)
0.98 (Typical)
Lead Temperature
Weight
For footnotes refer to the last page
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1
04/28/06
IRHF7130, JANSR2N7261
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.10
V/°C
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.18
0.185
4.0
Ω
V
V
=12V, I = 5.0A
D
Ã
DS(on)
GS
GS
=12V, I = 8.0A
D
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
2.5
—
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
—
S ( )
V
> 15V, I
= 5.0A Ã
DS
V
DS
I
25
= 80V ,V =0V
DS GS
DSS
µA
—
250
V
= 80V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
100
-100
50
V
= 20V
GSS
GSS
GS
nA
nC
V
= -20V
GS
Q
Q
Q
V
=12V, I =8.0A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
10
V
= 50V
DS
20
25
t
t
t
t
V
= 50V, I =8.0A
DD D
V =12V, R = 7.5Ω
GS
32
G
ns
Turn-Off Delay Time
Fall Time
40
d(off)
f
40
L
+ L
Total Inductance
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
C
C
Input Capacitance
—
—
—
1100
310
55
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
pF
oss
rss
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
8.0
3.2
1.5
270
3.0
S
A
SM
V
V
T = 25°C, I = 8.0A, V
= 0V Ã
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
ns
µC
T = 25°C, I = 8.0A, di/dt ≤ 100A/µs
j
rr
RR
F
V
≤ 50V Ã
DD
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-Ambient
—
—
—
—
5.0
175
thJC
thJ-PCB
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHF7130, JANSR2N7261
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
100KRads(Si)1
300 - 1000K Rads (Si)2
Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
100
2.0
—
—
4.0
100
1.25
—
—
4.5
V
= 0V, I = 1.0mA
GS D
DSS
V
V
V = V , I = 1.0mA
GS
DS D
GS(th)
I
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
25
100
-100
25
V
= 20V
GS
GSS
GSS
DSS
nA
—
—
V
GS
= -20 V
—
—
µA
V
=80V, V
=0V
GS
DS
R
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
Ã
—
0.18
—
0.24
Ω
V
= 12V, I =5.0A
D
GS
DS(on)
DS(on)
SD
R
Ã
—
0.18
—
0.24
Ω
V
GS
= 12V, I =5.0A
D
V
Ã
—
1.5
—
1.5
V
V
= 0V, I = 8.0A
GS S
1. Part number IRHF7130 (JANSR2N7261)
2. Part numbers IRHF3130 (JANSF2N7261), IRHF4130 (JANSG2N7261), IRHF8130 (JANSH2N7261)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe OperatingArea
Ion
LET
Energy
Range
(µm)
43
VDS(V)
(MeV/(mg/cm2)) (MeV)
@VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
28
285
305
100
100
100
90
100
70
80
50
60
—
36.8
39
120
100
80
60
40
20
0
Cu
Br
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
Post-Irradiation
IRHF7130, JANSR2N7261
Fig 1. Typical Response of Gate Threshhold Fig 2. Typical Response of On-State Resistance
Voltage Vs. Total Dose Exposure
Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Fig 4. Typical Response of Drain to Source
Vs. Total Dose Exposure
Breakdown Vs. Total Dose Exposure
4
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Post-Irradiation
IRHF7130, JANSR2N7261
Fig 5. Typical Zero Gate Voltage Drain
Fig 6. Typical On-State Resistance Vs.
Current Vs. Total Dose Exposure
NeutronFluenceLevel
Fig 8a. Gate Stress of
VGSS Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During 1x1012
Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
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5
RadiationCharacteristics
IRHF7130, JANSR2N7261
GS
DS
Note: Bias Conditions during radiation: V = 12 Vdc, V = 0 Vdc
Fig 9. Typical Output Characteristics
Fig 10. Typical Output Characteristics
Pre-Irradiation
Post-Irradiation100KRads(Si)
Fig 11. Typical Output Characteristics
Fig 12. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Post-Irradiation 1 Mega Rads (Si)
6
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Radiation Characteristics
IRHF7130, JANSR2N7261
GS
DS
Note: Bias Conditions during radiation: V = 0 Vdc, V = 80 Vdc
Fig 13. Typical Output Characteristics
Fig 14. Typical Output Characteristics
Pre-Irradiation
Post-Irradiation 100K Rads (Si)
Fig 15. Typical Output Characteristics
Fig 16. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Post-Irradiation 1 Mega Rads (Si)
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7
IRHF7130, JANSR2N7261
Pre-Irradiation
Fig 17. Typical Output Characteristics
Fig 18. Typical Output Characteristics
Fig 19. Typical Transfer Characteristics
Fig 20. Normalized On-Resistance
Vs.Temperature
8
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Pre-Irradiation
IRHF7130, JANSR2N7261
29
Fig 22. Typical Gate Charge Vs.
Fig 21. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 24. Maximum Safe Operating Area
Fig 23. Typical Source-Drain Diode
ForwardVoltage
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9
IRHF7130, JANSR2N7261
Pre-Irradiation
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 26a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
Fig 25. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 26b. Switching Time Waveforms
Fig27. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
10
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Pre-Irradiation
IRHF7130, JANSR2N7261
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
0.01
Ω
t
p
Fig 28a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
Fig 28c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig28b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
Fig 29a. Basic Gate Charge Waveform
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11
IRHF7130, JANSR2N7261
Foot Notes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
Á
V
= 25V, starting T = 25°C, L=4.1mH
J
GS
DS
DD
Peak I = 3.5A, V
irradiation per MIL-STD-750, method 1019, condition A.
=12V
L
GS
Å Total Dose Irradiation with V Bias.
 I
≤ 3.5A, di/dt ≤ 140A/µs,
DS
= 0 during
SD
DD
80 volt V
applied and V
GS
V
≤ 100V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — TO-205AF(Modified TO-39)
LEGEND
1- SOURCE
2- GATE
3- DRAIN
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2006
12
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