IRHF7130PBF [INFINEON]
Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN;
| 型号： | IRHF7130PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 8A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, CERAMIC, MODIFIED TO-39, 3 PIN 晶体 晶体管 局域网 |
| 文件： | 总12页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90653B
IRHF7130
IRHF8130
JANSR2N7261
JANSH2N7261
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
N CHANNEL
MEGA RAD HARD
Product Summary
100Volt, 0.18Ω, MEGA RAD HARD HEXFET
International Rectifier’s RAD HARD technology
HEXFETs demonstrate excellent threshold voltage
stability and breakdown voltage stability at total
radiaition doses as high as 1x106 Rads(Si). Under
identical pre- and post-irradiation test conditions, In-
ternational Rectifier’s RAD HARD HEXFETs retain
identical electrical specifications up to 1 x 105 Rads
(Si) total dose. No compensation in gate drive circuitry
is required. These devices are also capable of surviv-
ing transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few
microseconds. Since the RAD HARD process utilizes
International Rectifier’s patented HEXFET technology,
the user can expect the highest quality and reliability
in the industry.
Part Number
IRHF7130
IRHF8130
BVDSS
100V
100V
RDS(on)
0.18Ω
0.18Ω
ID
8.0A
8.0A
Features:
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 106 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
RAD HARD HEXFET transistors also feature all of
the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paral-
leling and temperature stability of the electrical pa-
rameters. They are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy
pulse circuits in space and weapons environments.
Pre-Irradiation
Absolute Maximum Ratings
Parameter
IRHF7130, IRHF8130
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
8.0
D
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
5.0
D
GS
C
I
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
32
DM
@ T = 25°C
P
25
W
W/°C
V
D
C
0.20
±20
V
GS
E
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
130
mJ
AS
dv/dt
5.5
V/ns
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.063 in. (1.6mm) from case for 10s)
0.98 (typical)
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1
10/14/98
IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices
Pre-Irradiation
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
100
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.10
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
—
—
—
—
—
—
0.18
0.185
4.0
V
V
= 12V, I = 5.0A
ꢀ
GS D
DS(on)
Ω
= 12V, I = 8.0A ꢀ
GS
D
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
2.5
—
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
—
25
S ( )
V
> 15V, I
= 5.0A ꢀ
DS
DS
I
V
= 0.8 x Max Rating,V =0V
DS GS
DSS
µA
—
250
V
= 0.8 x Max Rating
DS
V
= 0V, T = 125°C
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
100
-100
50
V
= 20V
GS
GSS
GSS
nA
nC
V
GS
= -20V
Q
Q
Q
V
=12V, I = 8.0A
g
gs
gd
d(on)
r
GS D
12
V
= Max Rating x 0.5
DS
20
t
t
t
t
25
55
V
= 50V, I = 8.0A,
DD D
Rise Time
R
= 7.5Ω
G
ns
Turn-Off Delay Time
55
d(off)
f
FallTime
Internal Drain Inductance
45
—
Measured from drain
lead, 6mm (0.25 in)
from package to center
of die.
sym-
Modified MOSFET
bol showing the internal
inductances.
L
D
nH
L
S
Internal Source Inductance
—
15
—
Measured from source
lead, 6mm (0.25 in)
from package to
source bonding pad.
C
C
C
Input Capacitance
Output Capacitance
—
—
—
1100
310
55
V
= 0V, V
= 25V
iss
oss
rss
GS
DS
f = 1.0MHz
—
—
pF
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
8.0
32
S
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
A
Pulse Source Current (Body Diode)
SM
V
t
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.5
350
3.0
V
ns
µC
T = 25°C, I = 8.0A, V
= 0V ꢀ
j
SD
rr
S
GS
T = 25°C, I = 8.0A, di/dt ≤ 100A/µs
j
F
Q
V
DD
≤ 50V ꢀ
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
—
—
—
—
5.0
thJC
°C/W
Junction-to-Ambient
175
Typical socket mount
th-JA
2
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IRHF7130, IRHF8130,
JANSR-,JANSH-,2N7261 Devices
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs 1, column 2, IRHF8130. The values in Table 1 will be
are tested to verify their hardness capability. The hard- met for either of the two low dose rate test circuits that
ness assurance program at International Rectifier are used. Both pre- and post-irradiation performance
comprises three radiation environments.
are tested and specified using the same drive circuitry
and test conditions in order to provide a direct com-
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MIL-STD-750, test
method 1019 condition A. International Rectifier has
imposed a standard gate condition of 12 volts per
note 5 and a VDS bias condition equal to 80% of the
device rated voltage per note 6. Pre- and post- irra-
diation limits of the devices irradiated to 1 x 105 Rads
(Si) are identical and are presented in Table 1, col-
umn 1, IRHF7130. Post-irradiation limits of the devices
irradiated to 1 x 106 Rads (Si) are presented in Table
parison.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 1012 Rads
(Si)/Sec (See Table 2)
International Rectifier radiation hardened HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments. Single Event Effects char-
acterization is shown in Table 3.
Table 1. Low Dose Rate
IRHF7130 IRHF8130
Parameter
100K Rads (Si) 1000K Rads (Si) Units
Test Conditions
Min Max Min
Max
BV
Drain-to-Source Breakdown Voltage 100
—
4.0
100
1.25
—
—
4.5
V
= 0V, I = 1.0mA
GS D
DSS
V
V
Gate Threshold Voltage ꢀ
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ꢀ
2.0
—
—
—
—
V
= V , I = 1.0mA
GS(th)
GS
DS
GS
D
I
100
-100
25
100
-100
50
V
= 20V
GSS
nA
I
—
—
V
= -20 V
GS
GSS
I
µA
V
DS
=0.8 x Max Rating, V =0V
GS
V
DSS
R
0.18
—
0.24
Ω
= 12V, I = 5.0A
GS
D
DS(on)1
On-State Resistance One
V
SD
Diode Forward Voltage ꢀ
—
1.5
—
1.5
V
T
C
= 25°C, I =8.0A,V = 0V
S GS
Table 2. High Dose Rate
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Min Typ Max Min Typ Max Units
Parameter
Test Conditions
V
Drain-to-Source Voltage
—
—
80
—
—
80
V
Applied drain-to-source voltage during
gamma-dot
DSS
I
—
—
0.1
100
—
—
—
800
—
—
—
0.5
100
—
—
—
A
Peak radiation induced photo-current
PP
di/dt
160 A/µsec Rate of rise of photo-current
µH Circuit inductance required to limit di/dt
L
—
1
Table 3. Single Event Effects
LET (Si)
Fluence
Range
(µm)
V
Bias
(V)
V
Bias
(V)
DS
GS
Ion
(MeV/mg/cm2)
(ions/cm2)
3x 105
Cu
28
~43
100
-5
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3
IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices
Post-Irradiation
Fig 1. Typical Response of Gate Threshhold
Fig 2. Typical Response of On-State Resistance
Voltage Vs. Total Dose Exposure
Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source
Fig 3. Typical Response of Transconductance
Breakdown Vs. Total Dose Exposure
Vs. Total Dose Exposure
4
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Post-Irradiation
IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
NeutronFluenceLevel
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
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5
IRHF7130, IRHF8130,
Radiation Characterstics
JANSR-,JANSH-,2N7261 Devices
GS
DS
Note: Bias Conditions during radiation:V = 12 Vdc, V = 0 Vdc
Fig 10. Typical Output Characteristics
Fig 11. Typical Output Characteristics
Pre-Irradiation
Post-Irradiation100KRads(Si)
Fig 12. Typical Output Characteristics
Fig 13. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Post-Irradiation 1 Mega Rads(Si)
6
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Radiation Characterstics
IRHF7130, IRHF8130,
JANSR-,JANSH-,2N7261 Devices
GS
DS
Note: Bias Conditions during radiation:V = 0 Vdc, V = 80 Vdc
Fig 15. Typical Output Characteristics
Fig 14. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Pre-Irradiation
Fig 16. Typical Output Characteristics
Fig 17. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Post-Irradiation 1 Mega Rads(Si)
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7
IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices
Pre-Irradiation
Fig 18. Typical Output Characteristics
Fig 19. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
Fig 21. Normalized On-Resistance
Vs.Temperature
8
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Pre-Irradiation
IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices
30
Fig 22. Typical Capacitance Vs.
Drain-to-SourceVoltage
Fig 23. Typical Gate Charge Vs.
Gate-to-SourceVoltage
Fig 25. Maximum Safe Operating
Fig 24. Typical Source-Drain Diode
Area
ForwardVoltage
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9
IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices
Pre-Irradiation
RD
VDS
VGS
D.U.T.
RG
+VDD
-
12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 27a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
Fig 26. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 27b. Switching Time Waveforms
Fig28. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
10
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Pre-Irradiation
IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices
15V
DR IVER
L
V
D S
D .U .T
R
G
+
-
V
D D
I
A
A S
12V
20V
0.01
Ω
t
p
Fig 29a. Unclamped Inductive Test Circuit
V
(BR )D S S
t
p
Fig 29c. Maximum Avalanche Energy
Vs. DrainCurrent
I
A S
Current Regulator
Fig29b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 30b. Gate Charge Test Circuit
Fig30a. Basic Gate Charge Waveform
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11
IRHF7130, IRHF8130,JANSR-,JANSH-,2N7261 Devices
Pre-Irradiation
See Figures 18 through 30 for pre-radiation
curves
Total Dose Irradiation with V
Bias.
GS
= 0 during
12 volt V
GS
applied and V
DS
Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
irradiation per MIL-STD-750, method 1019, codition A.
Total Dose Irradiation with V Bias.
DS
(pre-radiation)
V
= 0.8 rated BV
DS DSS
applied and V = 0 during irradiation per
GS
V
Starting T = 25°C,
J
DD = 25V,
Peak I = 8.0A,L>3.0mH R =25Ω
MlL-STD-750, method 1019, condition A.
L
G
I
SD
≤ 8.0A, di/dt ≤ 140A/µs,
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
V
≤ BV , T ≤ 150°C
DD
DSS
J
Suggested RG =7.5Ω
ꢀPulse width ≤ 300 µs; Duty Cycle ≤ 2%
All Pre-Irradiation and Post-Irradiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions —TO-205AF (ModifiedTO-39)
All dimensions are shown millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
10/98
12
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