IRHG3214PBF [INFINEON]
Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB;
| 型号： | IRHG3214PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 0.5A I(D), 250V, 2.4ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB |
| 文件： | 总8页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Absolute Maximum Ratings
Parameter
PD - 91711B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036AB)
I
R
H
G
7
2
250V,QUAD N-CHANNEL
1
4
®
R
A
D
H
a
r
d
H
E
X
F
E
T
T
E
C
H
N
O
L
O
G
Y
Product Summary
Part Number Radiation Level RDS(on) ID
IRHG7214
IRHG3214
100K Rads (Si)
300K Rads (Si)
2.25Ω 0.5A
2.25Ω 0.5A
2.25Ω 0.5A
2.25Ω 0.5A
IRHG4214
IRHG8214
600K Rads (Si)
1000K Rads (Si)
MO-036AB
International Rectifiers RADHard HEXFET® technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Pre-Irradiation
Units
I
@ V
@ V
= 12V, T = 25°C Continuous Drain Current
C
0.5
0.3
D
GS
A
I
= 12V, T = 100°C Continuous Drain Current
C
D
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
2.0
DM
P
D
@ T = 25°C
C
1.4
W
W/°C
V
0.011
±20
V
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
75
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
mJ
V/ns
AR
dv/dt
5.5
T
-55 to 150
J
T
Storage Temperature Range
oC
STG
300 (1.6mm from case for 10s)
1.5 (Typical )
Lead Temperature
Weight
g
For footnotes refer to the last page
www.irf.com
1
8/14/01
IRHG7214
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
250
V
V
= 0V, I = 1.0mA
D
GS
∆BV
/∆T Temperature Coefficient of Breakdown
0.29
V/°C
Reference to 25°C, I = 1.0mA
D
DSS
J
Voltage
R
Static Drain-to-Source On-State
Resistance
2.25
2.4
4.0
Ω
V
V
= 12V, I = 0.3A
D
= 12V, I = 0.5A
DS(on)
GS
➀
GS
D
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
0.47
V
V
DS
= V , I = 1.0mA
D
GS(th)
GS
> 15V, I
Ω
g
S ( )
V
= 0.3A ➀
DS
= 200V ,V =0V
fs
DS
V
I
25
DSS
DS GS
µA
250
V
= 200V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
10
100
-100
15
V
= 20V
GS
= -20V
GSS
GSS
nA
nC
V
GS
Q
Q
Q
V
=12V, I = 0.5A
g
gs
gd
d(on)
r
GS D
V
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-On Delay Time
Rise Time
2.5
4.5
20
= 125V
DS
t
t
t
t
V
DD
=125V, I = 0.5A
D
25
V
GS
=12V, R = 7.5Ω
G
ns
Turn-Off Delay Time
Fall Time
50
d(off)
f
50
L
+ L
Total Inductance
Measur ed from Drain lead (6mm /0.25in from
package) to Source lead (6mm /0.25in. from
Package) with Source wires internally
bonded from Source Pin to Drain Pad
S
D
nH
C
Input Capacitance
280
67
V
= 0V, V = 25V
f = 1.0MHz
iss
GS DS
C
Output Capacitance
pF
oss
rss
C
Reverse Transfer Capacitance
16
Source-Drain Diode Ratings and Characteristics
Min Typ Max Units
Parameter
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
0.5
2.0
1.7
S
A
SM
V
V
T = 25°C, I = 0.5A, V
j
= 0V ➀
GS
SD
S
t
Reverse Recovery Time
250
370
nS
µC
T = 25°C, I = 0.5A, di/dt ≤ 100A/µs
j
F
rr
Q
Reverse Recovery Charge
V
DD
≤ 50V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
17
90
thJC
thJA
°C/W
Junction-to-Ambient
Soldered to a Copper clad PB board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHG7214
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➀➀
1
2
Parameter
100KRads(Si)
300 - 1000K Rads (Si) Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
250
2.0
4.0
250
V
= 0V, I = 1.0mA
DSS
GS D
V
V
1.25
4.5
V
= V , I = 1.0mA
GS
DS D
GS(th)
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source" ➀
100
-100
25
100
-100
50
V
= 20V
GSS
GS
GS
nA
I
V
= -20 V
GSS
I
µA
V
=200V, V
=0V
GS
DSS
DS
R
2.25
3.0
Ω
V
= 12V, I =0.3A
D
GS
GS
DS(on)
DS(on)
SD
On-State Resistance (TO-3)
R
Static Drain-to-Source" ➀
On-State Resistance (MO-036AB)
Diode Forward Voltage" ➀
2.25
1.70
3.0
Ω
V
= 12V, I =0.3A
D
V
1.70
V
V
= 0V, I = 0.5A
GS S
1. Part numbers IRHG7214
2. Part number IRHG3214, IRHG4214 and IRHG8214
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
LET
2
MeV/(mg/cm ))
Energy
(MeV)
Range
(µm)
VDS(V)
@VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V @VGS=-20V
Cu
Br
28.0
285
305
43
39
250
250
250
250
250
250
250
225
250
210
36.8
300
250
200
150
100
50
Cu
Br
0
0
-5
-10
VGS
-15
-20
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHG7214
Pre-Irradiation
10
10
VGS
15V
VGS
TOP
TOP
15V
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
1
0.1
1
4.5V
4.5V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 150 C
J
T = 25 C
J
0.1
0.01
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.5
0.5A
=
I
D
°
T = 25 C
J
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
1
V
= 50V
DS
V
=12V
GS
20µs PULSE WIDTH
8 10
, Gate-to-Source Voltage (V)
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
4
6
T , Junction Temperature( C)
J
V
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
4
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Pre-Irradiation
IRHG7214
600
20
16
12
8
V
= 0V,
f = 1MHz
GS
I = 0.5A
D
V
V
V
= 200V
= 125V
= 50V
C
= C + C
gs
C
SHORTED
DS
DS
DS
iss
gd , ds
C
= C
gd
rss
C
= C + C
ds
oss
gd
400
200
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
0
3
6
10
13
16
10
100
Q , Total Gate Charge (nC)
G
V
DS
, Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
1ms
1
0.1
°
T = 150 C
J
1
10ms
°
T = 25 C
J
°
T = 25 C
C
°
T = 150 C
J
V
= 0 V
Single Pulse
GS
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
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5
IRHG7214
Pre-Irradiation
RD
0.6
0.5
0.4
0.3
0.2
0.1
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0.0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
r
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
P
2
DM
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.1
0.01
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
6
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Pre-Irradiation
IRHG7214
200
150
100
50
I
D
TOP
0.22A
0.32A
15V
BOTTOM 0.5A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
V
20V
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig12b. UnclampedInductiveWaveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
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7
IRHG7214
Pre-Irradiation
Foot Notes:
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀➀➀Total Dose Irradiation with V Bias.
➀➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
➀➀➀V
DD
= 50V, starting T = 25°C, L=600mH
J
GS DS
irradiation per MIL-STD-750, method 1019, condition A.
Peak I = 0.5A, V
L
=12V
GS
➀➀ Total Dose Irradiation with V Bias.
200 volt V applied and V
DS GS
irr adiation per MlL-STD-750, method 1019, condition A.
➀➀ I
SD
≤ 0.5A, di/dt ≤ 150A/µs,
DS
= 0 during
V
DD
≤ 250V, T ≤ 150°C
J
Case Outline and Dimensions MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/01
8
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