IRHG58110 [INFINEON]
RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036); 抗辐射功率MOSFET直通孔( MO- 036 )![IRHG58110](http://pdffile.icpdf.com/pdf1/p00041/img/icpdf/IRHG58110_215914_icpdf.jpg)
型号: | IRHG58110 |
厂家: | ![]() |
描述: | RADIATION HARDENED POWER MOSFET THRU-HOLE (MO-036) |
文件: | 总8页 (文件大小:112K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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PD - 94432A
IRHG57110
100V, Quad N-CHANNEL
RAD-Hard™ HEXFET®
RADIATION HARDENED
POWER MOSFET
TECHNOLOGY
THRU-HOLE (MO-036)
R
5
Product Summary
Part Number Radiation Level RDS(on)
ID
IRHG57110 100K Rads (Si)
IRHG53110 300K Rads (Si)
IRHG54110 600K Rads (Si)
0.29Ω
0.29Ω
0.29Ω
1.6A
1.6A
1.6A
1.6A
IRHG58110 1000K Rads (Si) 0.31Ω
MO-036AB
Features:
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite applica-
tions. These devices have been characterized for both
Total Dose and Single Event Effects (SEE). The combina-
tion of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC con-
verters and motor control. These devices retain all of the
well established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and tempera-
ture stability of electrical parameters.
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings (Per Die)
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
1.6
D
GS
C
A
I
D
= 12V, T = 100°C Continuous Drain Current
1.0
6.4
GS
C
I
Pulsed Drain Current ➀
Max. Power Dissipation
DM
@ T = 25°C
P
1.4
W
W/°C
V
D
C
Linear Derating Factor
0.011
±20
V
Gate-to-Source Voltage
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
130
mJ
A
AS
I
1.6
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
0.14
mJ
V/ns
AR
dv/dt
6.5
T
-55 to 150
J
oC
g
T
Storage Temperature Range
STG
Lead Temperature
Weight
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
08/01/02
IRHG57110
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device@Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
—
BV
Drain-to-Source Breakdown Voltage
100
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.14
—
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.29
V = 12V, I = 1.0A
GS D
DS(on)
➀
Ω
V
g
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
1.0
—
—
—
—
—
4.0
—
10
25
V
V
= V , I = 1.0mA
GS(th)
DS
GS
D
Ω
S ( )
V
DS
> 15V, I
= 1.0A ➀
fs
DS
I
V
= 80V, V = 0V
DS GS
DSS
µA
—
V
= 80V,
DS
= 0V, T =125°C
V
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
17
V
GS
= 20V
GSS
GSS
nA
nC
V
GS
= -20V
Q
Q
Q
=12V, I = 1.6A,
g
gs
gd
d(on)
r
GS
D
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
4.4
3.9
21
V
DS
= 50V
t
t
t
t
V
= 50V, I = 1.6A,
DD
GS
D
16
V
=12V, R = 7.5Ω
G
ns
Turn-Off Delay Time
FallTime
30
d(off)
f
15
L
S
+ L
Total Inductance
—
Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
D
nH
C
Input Capacitance
—
—
—
370
110
3.4
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
C
Output Capacitance
pF
oss
rss
C
Reverse Transfer Capacitance
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
1.6
6.4
1.2
110
380
S
A
SM
V
V
T = 25°C, I = 1.6A, V
= 0V ➀
j
SD
S
GS
t
Q
Reverse Recovery Time
Reverse Recovery Charge
nS
nC
T = 25°C, I = 1.6A, di/dt ≤ 100A/µs
j
rr
RR
F
V
DD
≤ 25V ➀
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance (Per Die)
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Ambient
—
—
90
Typical socket mount
thJA
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
www.irf.com
Pre-Irradiation
IRHG57110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @Tj = 25°C, PostTotal Dose Irradiation➀➀ (Per Die)
1000K Rads (Si)2
Parameter
Up to 600K Rads(Si)1
Min Max
Units
Test Conditions
Min
Max
BV
Drain-to-Source Breakdown Voltage 100
—
100
2.0
—
—
4.5
100
-100
25
V
= 0V, I = 1.0mA
DSS
GS D
V
V
Gate Threshold Voltage
2.0
—
—
—
—
4.0
V
= V , I = 1.0mA
GS
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
10
V
GS
V
GS
= 20V
GSS
GSS
nA
—
= -20 V
I
—
µA
V
= 80V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-39)
Static Drain-to-Source
On-State Resistance (MO-036AB)
Diode Forward Voltage
➀
0.226
—
0.246
Ω
V
= 12V, I = 1.0A
D
GS
R
DS(on)
➀
—
—
0.29
1.2
—
—
0.31
1.2
Ω
V
= 12V, I = 1.0A
D
GS
V
SD
➀
V
V
= 0V, I = 1.6A
GS S
1. Part number IRHG57110, IRHG53110, IRHG54110
2. Part number IRHG58110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
VDS (V)
Ion
LET
Energy Range
MeV/(mg/cm2)) (MeV)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-12.5V @VGS=-15V
@VGS=-20V
80
Br
I
36.7
59.8
309
341
39.5
32.5
100
100
100
100
100
100
100
90
100
25
20
120
100
80
60
40
20
0
Br
I
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHG57110
Pre-Irradiation
10
10
VGS
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
1
1
5.0V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
0.1
10
100
1
10
100
0.1
1
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
10
1.6A
=
I
D
°
T = 150 C
J
°
T = 25 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
= 12V
GS
0.1
5.0
5.5
6.0 6.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
4
www.irf.com
Pre-Irradiation
IRHG57110
800
20
16
12
8
V
= 0V,
f = 1MHz
C
I = 1.6A
D
GS
C
= C + C
SHORTED
ds
iss
gs
gd ,
gd
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
C
= C
gd
rss
C
= C + C
oss
ds
600
400
200
0
C
iss
C
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
4
8
12
16
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
10
10
OPERATION IN THIS AREA LIMITED
BY R (on)
DS
°
T = 150 C
J
1
1
1ms
°
T = 25 C
J
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
0.1
0.4
0.1
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
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5
IRHG57110
Pre-Irradiation
RD
1.6
1.3
1.0
0.6
0.3
0.0
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
CaseTemperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
www.irf.com
Pre-Irradiation
IRHG57110
300
250
200
150
100
50
I
D
TOP
0.7A
1.0A
BOTTOM 1.6A
1 5V
DRIVER
L
V
G
DS
D.U.T
R
.
+
V
D D
-
I
AS
2VGS
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
0
25
50
75
100
125
150
V
°
(BR)DSS
Starting T , Junction Temperature ( C)
J
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
IRHG57110
Footnotes:
Pre-Irradiation
➀ Repetitive Rating; Pulse width limited by
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➀ Total Dose Irradiation with V Bias.
maximum junction temperature.
GS
= 0 during
➀ V
= 25V, starting T = 25°C, L= 100mH,
J
DD
Peak I = 1.6A, V
12 volt V
applied and V
GS
irradiation per MIL-STD-750, method 1019, condition A
DS
=12V
L
GS
➀ I
≤ 1.6A, di/dt ≤ 340A/µs,
≤ 100V, T ≤ 150°C
J
SD
➀ Total Dose Irradiation with V Bias.
DS
= 0 during
V
DD
➀ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
80 volt V
applied and V
DS
irradiation per MlL-STD-750, method 1019, condition A
GS
Case Outline and Dimensions — MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 08/02
8
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